2N429 Search Results

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

Contextual Info: GEC PLESSEY x S E M I C O N D U C T O R S DS3008-2.0 ZN429E8/ZN429D LOW COST 8-BIT D-A CONVERTER The 2N429 is a monolithic 8-bit D-A converter containing an R-2R ladder network of diffused resistors with precision bipolar switches. • ■ ■ ■ ■ ■

2N4424

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical C haracteristics (Ta=25 'C, Unless O therw ise Specified) Maximum Ratings Type CBO No. (V) Min ^CEO i ^EBO (V) ! (V) Min Min Po leso ^CB 'CES <W) (HA) Max (V ) (MA) 0.4 20 @Tc=25°c 0.625 2N4294 0.2 hpE

2N4298

Contextual Info: 2N4296 2N4298 2N4299 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4296, 2N4298, and 2N4299 devices are silicon NPN power transistors designed for power amplifier and switching applications. MARKING: FULL PART NUMBER

2N5428

Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2M4409

Abstract: 2N4294 2N4295 2N4353 2N4400 2N4401 2N4424 2N4944 2N4946 2N4951
Contextual Info: TO-92 Plastic Package Transistors NPN IL Maximum Ratings Type No. Electrical C haracteristics (Ta=25"C, Unless Otherwise Specified) Vcbo ^CEO Vebo 'c pD (V) (V) (V) (W) (A) Min Min Min Tc=25°< 2N4294 30 12 5 0.625 0.2 1(30 *CES ^CE ^FE (|iA) 8 (V ) (mA) e (v)

2N4946

Contextual Info: DIL TO-92 Plastic Package Transistors NPN Maximum Ratings Electrical C haracteristics (Ta=25"C, Unless Otherwise Specified) Type V cbo ^CEO V ebo No. (V) Min (V) Min (V) Min (W) (A) Tc=25°< 30 12 5 0.625 0.2 2N4294 pD 'c 1(30 *CES ^CE ^FE (|iA) 8 (V ) (mA) e (v)

2N4299

Abstract: 2N4296 vbe 10v, vce 500v NPN Transistor 2N4298 transistor 200V 100MA NPN
Contextual Info: Datasheet 2N4296 2N4298 2N4299 1 WMM Sem iconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE M anufacturers of W orld C lass D iscrete S em iconductors DESCRIPTION

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

Contextual Info: L, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4296 2N4298 2N4299 NPN SILICON POWER TRANSISTOR TO-66 MAXIMUM RATINGS (TC = 25°C) SYMBOL VCBO VCEO VEBQ Collector-Base Voltage Collector-Emitter Voltage

40312

Abstract: 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2N4355

Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
Contextual Info: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D

Contextual Info: Maximum Ratings Type No. VCBO ^CEO VEBÓ Electrical Characteristics Ta=25"C, Unless Otherwise Specified - (V) Min (V) Min (V) Min Pd 'c <W) (A) 6Tc=25°c 2N3702 40 25 5 0.625 0.6 2N3905 40 40 5 0.625 0.2 IcBO ^CB tas VCE (mA) e (V) (mA) 0 (V ) Max Max Min

Contextual Info: * TO-92 Piastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c (V). (A) Min @Tc=25°c 'c& (mA) NF Freq c„ CDIL (dB) (MHz) (PF) Case Max Max Style V cbo ^CEO (V) Min (V) Min 2N3693

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N3583

Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430
Contextual Info: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D | 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561

zeltex

Abstract: transistor E304 application of chopper amplifier load cell amplifier 2n3565 equivalent transistor 6AQ5 tube Thermopile DExter 1M Zeltex device 2N4248 CS3002
Contextual Info: AN300 CS3001/2/11/12 & CS3003/4/13/14 Chopper-stabilized Operational Amplifiers Jerome E. Johnston 1. INTRODUCTION Cirrus Logic offers a variety of low-voltage CMOS chopper-stabilized amplifiers. The chopper-stabilized amplifiers designed at Cirrus Logic are unique. These amplifiers offer performance benefits

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

Contextual Info: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE. =13 D • Ô5 1 3 Ô S 0 D 0 0 3 5 Ö7 SEM ICO N D S/IC S 93D 5 ■ 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain

2N4249

Abstract: 2n3702 2N4965
Contextual Info: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. C80 (V) Min CEO (V) Min ('cmai eV(a(v) 80 PD (W) @Tc=25°c Max 2N3702 0.625 0.1 2N3703 0.625 0.1 2N3905 0.625 'c e s V C£ (pA) 0(V) Max bF£ 'c & (mA) ^CE ^CE(SAT)