2N39 Search Results

2n3972

Abstract: transistor 2N3972
Contextual Info: TYPES 2N3970 THRU 2N3972 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L - S 7 31 1 9 1 3 . M A R C H 1973 S Y M M E T R IC A L N-C H A N N EL F IE L D -E F F E C T TRAN SISTO RS FOR HIGH-SPEED C O M M U TA TO R A N D CHOPPER APPLICATIO N S

2N3904

Contextual Info: DC COMPONENTS CO., LTD. 2N3904 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector

ADM1033 D

Abstract: fs5 mosfet 1404D
Contextual Info: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also

Contextual Info: 2N3958 MONOLITHIC DUAL N-CHANNEL JFET The 2N3958 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3958 family are matched JFET pairs for differential amplifiers. The 2N3958 family of general purpose JFETs is characterized for low and medium

2N3996

Abstract: 2N3997 2N3999 1000C 2N3998
Contextual Info: TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2N3956

Abstract: 2N3958 equivalent 2N3957 TO71 package Siliconix JFET Pairs
Contextual Info: SILICONIX INC Ô2S473S 0013015 b 1ÖE D fX S ilic o n ix 2N3956 SERIES JL M N-Channel JFET Pairs “T-ZT7-2-7 The 2N3956 Series are monolithic designed for high performance amplification. JFET pairs differential PART NUMBER This series features tight matching,

transistor 2n3906

Abstract: PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2n3906 PNP transistor DC current gain transistor2n3906 PNP TRANSISTOR SOT54 2n3906 specification 2N3904 2N3906 switching transistor
Contextual Info: Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching in industrial applications.

tr 2n3906

Abstract: 2N3906 2N3906 plastic 2N3906 die marking k3 pnp
Contextual Info: 2N3906 PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available

2n3904 225

Abstract: 2N3904 2N3904 die
Contextual Info: 2N3904 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906

2n3904 npn

Abstract: 2N3904 2N3906 transistor NPN 2N3904 UTC2N3904
Contextual Info: UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =625mW *Complementary to 2N3906 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

2N3906L

Abstract: 2N3906-G 2N3906L-T92-K
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc MAX =625mW * Complementary to UTC 2N3904 1 TO-92 „ ORDERING INFORMATION Ordering Number

2n3997

Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
Contextual Info: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N

2n5385

Abstract: 2N5384
Contextual Info: TYPES 2N5384, 2N5385 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C £ DESIGNED FOR COMPLEMENTARY USE WITH 2N3996 AND 2N3998 • 30 W at 100°C Case Temperature • Typ t on of 160 ns at 2 A I c

2N3994

Contextual Info: B8 9 -9 7 2N3994, 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • HIGH SPEED COMMUTATORS Absolute maximum ratings at Ta = 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage 25 V 25 V Continuous Forward Gate Current Continuous Device Power DIssipation

NPD5566

Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
Contextual Info: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15

2n3966

Abstract: transistor 2sk CRS15
Contextual Info: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f

PN4122

Abstract: 2N3905 2N3906 2N4125 2N4126 MPS6518 PN4121 PN4917 2N3906 TO-92
Contextual Info: This PNP Transistors Material PNP General Purpose Amplifiers and Switches continued V Copyrighted Device No. Case Style 2N3905 TO-92 (92) By 2N3906 TO-92 (92) CBO V CEO V (V) Min (V) Min (V) Min 40 40 5 40 40 V CE(SAT) ’c es* EBO 'C B 0 @ V CB (nA) Max

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

2N3906

Abstract: 2n3906 sot23
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3906 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N3906L-AB3-R

2N3917

Contextual Info: 2N3917 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)