2N3819 FET Search Results

buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Contextual Info: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391

2N3819

Abstract: transistor 2N3819 2n3819 transistor J-FET 2N3819
Contextual Info: MIE D PHILIPS INTERNATIONAL D ata sheet status Preliminary specification d a te of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package. • 711002b G02b333 0 ■ PHIN 2N3819 T-3S-2S N-channel J-FET PINNING - TO-92

transistor 2N3819

Abstract: 2N3819 2N3819 ti 2n3819 transistor J-FET-2N3819 2N3819 data JFET 2N3819 J-FET TRANSISTOR UBB081 philips jfet
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue October 1990 2N3819 N-channel J-FET PINNING - TO-92 FEA T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1 2 3 DESCRIPTION drain gate source DESCRIPTIO N

Contextual Info: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. RelY08| RelYfel @ C|SS NF ^rss @ TO-92 V BR GSS v GS(off) (V) loss PIN OUT @ (mmho) f Qimho) f <PF) (PF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) TO-92 2N3819

transistor 2N3819

Abstract: 2N3819 n 3819 2n3819 transistor 2N3819 ti 3819 transistor J-FET philips jfet n-channel JFET J-FET-2N3819
Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue October 1990 FEATUR ES • Lo w c o s t • S p e cifie d at 100 M H z • A uto m atic insertion package. 2N3819 N-channel J-FET PINNING - TO-92 PIN 1 2 3 PIN CONFIGURATION DESCRIPTION

2N5485

Abstract: 2N5951 2N4416 2N5950 2N5952 Variable resistor 50K ohm 2N3819 2N4416A 2N5484 2N5486
Contextual Info: Junction FETs RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re IYfsl Re IYosj @ C|SS NF rs* @ V BR GSS TO-92 v GS(off) loss PIN OUT @ (mmho) f Qimho) f <PF) <PF) <dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) (V) TO-92 2N3819

TIS58

Abstract: TIS58 fet TIS88A TIS88 TIS59 BF245 BF256LC A5T4261 BF246 BF256LA
Contextual Info: S FET's Silect For General Purpose Amplifiers Type No. Case TIS58 TIS59 T092 TQ92 O 5 Pol Û . IGSS CD I max. nA V n c 'it i A N N 25 2b O ft 4 4 F, 5 5 5 BF244A* BF244B* BF244C* T092 T092 T092 N N N N 2N3819 T092 N 25 2 2N3820 T092 P 20 20 2 N5460 T092 P

2N3819 NATIONAL SEMICONDUCTOR

Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Contextual Info: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k

2N3819 NATIONAL SEMICONDUCTOR

Abstract: National 2N3819 2n3819 surface mount 2n5951 2N5245 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305
Contextual Info: bflE D • bSDllBO □ D 3 cm ci,:i SS7 INSCS NATL SEMICOND DISCRETE TO -52 N Channel DG VP@VDSID m BVqsj Device (V) Min (V) Min Max 2N3819 25 2N4416 30 2.5 im 8 15 2 6 15 RelYfsl NF Re(Yos) Clss Crss (dB)@Rg = 1k (mmho) @ f (limho) @ f Package (PF) (PF)

Contextual Info: Philips Components D a ta s h e e t s ta tu s P re lim in a ry s p e c ific a t io n d a te o f is s u e O c t o b e r 1990 2N3819 N-channel J-FET PINNING - TO-92 FE A T U R E S • Low cost • Specified at 100 M Hz • Automatic insertion package. PIN 1

2N5952

Contextual Info: Junction fets* RF Amplifiers TO-72 N-Channel CASE TYPE NO. Re lYfel R IYqsI & c iss NF c rss @ TO-92 V BR GSS vGS(off) (V) •d s s PIN OUT @ (mmho) f Ounho) f (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0 4.0

2N5949

Abstract: 2N5951 2N5953 2N5952 2n3819
Contextual Info: Junction FETs RF Amplifiers TO-72 N-Channel C A SE TYPE NO. Re lYfgl Re IY0S| c is s NF ^rss @ V BR G SS TO-92 v GS(off) •d s s PIN OUT @ (mmho) f Oimho) i (pF) (pF) (dB) RG=1K (V) MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX (mA) 00 TO-92

RF Amplifiers

Abstract: 2n5952 equivalent 2N3819 equivalent transistor 2N5952 datasheet 2n5484 jfet 2N5951 2n4416 2n4416 jfet 2N5952 2n5484 equivalent
Contextual Info: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ (µmho) f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC

2N5950

Abstract: 2N5952
Contextual Info: Junction FETs* RF Amplifiers N-Channel CASE TYPE NO. TO-72 Re Yfs @ mmho f Re Yos @ µmho) (µ f Ciss Crss NF V(BR)GSS TO-92 VGS(off) IDSS PIN OUT @ (pF) (dB) RG=1K (V) MAX MAX f(MHz) MIN MIN MAX MIN MAX - 25 - 8.0 2.0 20 DGS 4.0 400 30 - 6.0 5.0 15 SDGC

2ns484

Abstract: mpf102 2N3819 ti MPF112 2N5485 PN4416 U311 2N5078 2N4224 J271
Contextual Info: s^nalFET Product Specifications confd FET Product Specifications D E V IC E RF A M PLIFIERS GEOM ETRY (Section 4) <3 u ) Z n 0. UL LL U- mJ ^ ^ ^ cc oc oc cc XX Z Z Z Z Z Z 1 LL ^ ^ X X X I X X N N N ww NXXN NNIXXXN NN NN Z Z Z Z Z Z Z Z Z û I o I Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z

NF5458

Abstract: 2N4303 2N3369 2N5363 NF523 2n3367 2N5163 nf5457
Contextual Info: N-Channel FETs 9 neral purpose amps Type No. Case Style BVoss "BVOOO IVI M,n lass InAI Max VII Illmholl lOSS ImAI Min Max Min Max VploHI IVI Max C'u IpFI Max Cru IpFI Max NF IdBI I"en In nV.,fHl1 Max ProcIII No. 2N3069 TO•18 '50 1 2 10 1000 2500 10 15 4 52

2n3819 replacement

Abstract: MPF102 JFET j310 replacement mpf102 replacement J210 Replacement 2N3819 cross reference MPF102 JFET data sheet 2N5485 mpf102 j305 replacement J300 replacement
Contextual Info: Siliconix 7-23 s^nalFET Product Specifications confd FET Product Specifications D E V IC E RF A M PLIFIERS GEOM ETRY (Section 4) <3 u) Z 0. UL LL U- mJ ^ ^ ^ cc oc oc cc LL ^ ^ XX 1X X X I X X N N N w w N X X N N N I X X X N N N N N Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z û I o I Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z

PN4360

Abstract: pn3687
Contextual Info: Junction FETs' RF Amplifiers TO-72 N-Channel CASE TYPE NO. ReH ^OSl R e n ffsl C |SS c rss IF @ @ TO-92 V BR GSS VGS (O ff) (V y •ds >S PIN OUT (mmho) f Qimho) f <PF> (PF) W ) RG=1K 00 MIN (MHz) MAX (MHz) MAX MAX MAX f (MHz) MIN MIN MAX MIN MAX . 8.0

F245B

Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten

bs170 replacement

Abstract: BC237 BC30 transistor K 2056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)

date code IEC 62

Abstract: bc107a pin out BC237 bf256c
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0610LL 3 DRAIN 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain – Gate Voltage RGS = 1 MΩ VDGR 60 Vdc Gate – Source Voltage

code marking 6z sot-23

Abstract: BC237 H2A transistor BF245 6z sot223 marking MMBV2104 j112 fet BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor MMBF170LT1 DRAIN 3 N–Channel  1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage VDGS 60 Vdc Gate–Source Voltage — Continuous

BC237

Abstract: Fet BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V

BC237

Abstract: transistor 2n2222a to-92 OF transistor 2N2222 to-92 transistor 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN2222LL 3 DRAIN Motorola Preferred Device  2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ