U311 Search Results

Contextual Info: B 68 9-97 U311 N -C H A N N E L SILIC O N JU N CTIO N FIELD-EFFECT TRANSISTOR • MIXER • OSCILLATOR VHF/UHF AMPLIFIER Absolute maximum ratings at Ta = 25'C. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

HJ4A

Contextual Info: 形状及构造 Ƶֱᡸᵘ䗴 1. 䰆ᇬ㔽ൟ 3. ล᭭ᆚᇕൟ Ў䍋ࠄ䰆ᇬֱᡸⱘ԰⫼ˈ䞛⫼ล᭭໪໇ㄝ໪㔽DŽ 䆹ᵘ䗴ৃ䰆ℶ⛞᥹ᯊⱘࡽ⛞ࠖ੠⏙⋫ᯊⱘ⏙⋫ 䆹ᵘ䗴೼㞾ࡼ⛞᥹ᯊϡ㛑䰆ℶࡽ⛞ࠖ։ܹˈг ⎆։ܹDŽᆚᇕࠡᏆᇍ㾺⚍Ϟⱘ᳝ᆇ៤ߚ䖯㸠㜅

Contextual Info: AN783 ࢱ࢖ ࣑ ࣥ ࢢ ᛶ ⬟ ࣋ ࣮ ࢫ ࡢ S I 5 0 1 / 2 / 3 / 4 ᑐ㇟࢔ࣉࣜࢣ࣮ࢩࣙࣥ ゎㄝ 1. ࡣࡌࡵ࡟ ࡇࡢ࢔ࣉࣜࢣ࣮ࢩ࣭ࣙࣥࣀ࣮ࢺࡣࠊࢱ࢖࣑ࣥࢢ⢭ᗘࡢඹ㏻ࡢ ᐃ᪉ἲࢆࡲ࡜ࡵࠊSi501/2/3/4 CMEMS ࣇ࢓࣑ࣜ⏝

K308-18

Abstract: dlna test case k308 TO72 package n-channel jfet Siliconix JFET Dual Amplifiers J308-10 U308-10 U311 U430-1 DLNA
Contextual Info: designed for S ilic o n ix . U311 s n-channel JFET Performance Curves N ZA See Section 5 • VHF Am plifiers B E N E F IT S • High Power Gain 16 dB Typ @ 105 MHz, CommonGate 11 dB Jy p @ 450 MHz, CommonGate • Low Noise Figure 1.5 dB Typ @ 105 MHz 2.7 dB Typ @ 450 MHz

WSC01/24R990FEK

Contextual Info:  WSC, WSN www.vishay.com 9LVKD\'DOH 㓵㔋⭫䱱ಞθ儎㋴ᓜࣕ⦽θ㺞䶘ᆿ㻻ශ ⢯ᙝ • ‫᧕✺ޘ‬㔃ᶴ • • • • • • ⌘ກሱ㻵 ‫ޘ‬वᔿㄟᆀ ൘н਼⧟ຳᶑԦлާᴹࠪ㢢Ⲵਟ䶐ᙗ 仍ᇊ࣏⦷儈 ˄ᴰ儈䗮 3W˅

Contextual Info: 4fl2bêflô 0 0 0 0 2 3 1 h • 2bE D INTER F E T CORP - r - 3 i-a .5 B39 U311 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • VHF AMPLIFIERS • OSCILLATORS • MIXERS absolute m axim u m ratings at 25°C free-air temperature Gate-Drain or Gate-Source V o lt a g e .

LQFP48

Abstract: LQFP-48 LPC210x ARM LPC2103 ARM7 microcontrollers LPC2101 ARM7TDMI-S 16C550 LPC2102 LPC2103
Contextual Info: ෎ѢARM7TDMI-S ‫ݙ‬Ḍⱘ70 MHzǃ32ԡ LPC210x㋏߫ᖂ᥻ࠊ఼ 䍙Ԣ៤ᴀⱘᇣൟ ARM7ᖂ᥻ࠊ఼ 䖭㉏ࡳ㛑ᔎ໻ǃ㒣⌢催ᬜⱘᖂ᥻ࠊ఼ᢹ᳔᳝催32 KBⱘ䳊ㄝᕙ䮾ᄬ੠᳔催8 KBⱘSRAMDŽ ↣Ͼᖂ᥻ࠊ఼ഛ䜡໛ϔϾ10ԡA/D䕀ᤶ఼ˈࣙᣀܿϾ䗮䘧੠໮ϾІ㸠᥹ষˈ䞛⫼ሎᇌҙЎ

Contextual Info: Jsii.su <~>£.m.i-L.onaucitoi L/-* 10 duct ±, One. £s t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. U311 N-Channel Silicon Junction Field-Effect Transistor • Mixer • Oscillator • VHF/UHF Amplifier

U311

Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-68 B-68 01/99 U311 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C. ¥ Mixer ¥ Oscillator ¥ VHF/UHF Amplifier Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

UC754

Abstract: UC758
Contextual Info: ATCdL LOW P O W E R FIELD E FFEC T T R A N S IS T O R S IMliOMtL ¡PÖJM^©©!! G^tgKlÄMilL Type Number •BVDgo or Case BVgss Style Min (T O - Geometry (V) Ciss Max (pF) Crss Max (PF) Vgs (off) Min Max (V) lgss Max (nA) Yls Min Max (uMhos) Idss Min Max

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

AN-1005

Abstract: TO-251AA
Contextual Info: PD - 97284 AUTOMOTIVE MOSFET Features l l l l l l IRLR3114ZPbF U3114ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Logic Level D VDSS = 40V

6209A

Abstract: TC-6209A 2SA1611 04 NG 537
Contextual Info: zr— ^ — h N E C jr vU = i> 2SA1611 P N P X fcf£ * V # V=l> M m m m sm mm « "J o S / J\ f é W f ê T * U , /N'T 7 U KlCffl t 2.1 L T ft T - - T o < ¥ ii : mm ± 0.1 1.25 ±0.1 02SC4177 t 3 > y i j * > $ V ! : ' f è ï ï ? È £ T o o v m u s m ifX È

Contextual Info: raOEXyXgTT ÄTFÄ[L N - C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .019" (0.483mm It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .

AULU3110Z

Abstract: AULR3110Z AUIRLR3110Z AUIRLU3110Z ISD 1820 P kk63 AEC-Q101-001 u3110z
Contextual Info: PD - 96369 AUTOMOTIVE GRADE AUIRLR3110Z U3110Z Features l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

U311

Abstract: U313
Contextual Info: h o t H E W L E T T mL'EM PACKARD W 8 mm 0.31 inch Ultra Mini Seven Segm ent D isplays HDSP HDSP HDSP HDSP HDSP HDSP Technical Data • Com pact Package • 8 mm (0.31 inch) C h aracter H eight • Choice of Colors Wide Range of Colors • Excellent A ppearance

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

434 289

Abstract: 54175 S085 54151 gen 24lJ IPI04LJ NA220 DTB20
Contextual Info: TGC100M MILITARY SERIES 1-/im CMOS GATE ARRAYS Release 2.0, A PR IL 1989 * AC PERFORMANCE TEST STRUCTURE Fully Characterized for M ilitary Applications — Product Fully Compliant w ith the Requirements of M IL -S T D -883 Paragraph 1.2.1 Is Available — Production Processing Is in Accordance

FMG G20

Abstract: neptune make M9 power analyzer USER MANUAL PI7C7300 circuit diagram laptop motherboard F1A4 oasis pdf on ic 7442 details 272-PIN M66EN AD-29B
Contextual Info: PI7C7300 3-PORT PCI-to-PCI BRIDGE REVISION 1.05 2380 BERING DRIVE, SAN JOSE, CA 95131 TELEPHONE: 1-877-PERICOM 1-877-737-4266 FAX: 408-435-1100 EMAIL: SOLUTIONS@PERICOM.COM INTERNET: HTTP://WWW.PERICOM.COM PI7C7300 3-PORT PCI-to-PCI BRIDGE Advanced Information

IRFR311

Abstract: U311 IRFR310 irfu310 250M ISE Electronics RE25
Contextual Info: N-CHANNEL POWER MOSFETS IRFR310/311 IRFU310/311 FEATURES D-PAK • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: AUIRLR3110Z U3110Z Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S Description VDSS

1HT251

Abstract: 2T203 kt117 1T308 2T355A 2T312 IT308B K1HT251 kt117b 2T313
Contextual Info: WmmËÊÊm W h A iW f W * i r*ïS >*••> ro s ît. ;<W«a 7 mm m$m 15ÎÏ3 Sktófefc?¿feS 11181 immm SI f ' ■ ' ' ' : m S ËÊB B S M M CnPABOHHMK nonynpoBQQHHKOBbiE nPHBOPbl TPAH3MCTOPbl MAflOI/ì MOLUHOCTM n O f l PEA A K L4H EPÌ A . B rO flO M E A O B A