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    2N367 Search Results

    2N367 Datasheets (150)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N367
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 71.82KB 1
    2N367
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.43KB 1
    2N367
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 106.46KB 1
    2N367
    Unknown Shortform Electronic Component Datasheets Short Form PDF 59.4KB 1
    2N367
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 92.8KB 1
    2N367
    Unknown Vintage Transistor Datasheets Scan PDF 48.63KB 1
    2N367
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 88.05KB 1
    2N367
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 83.26KB 1
    2N367
    Unknown GE Transistor Specifications Scan PDF 37.54KB 1
    2N367
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 140.28KB 1
    2N3670
    Central Semiconductor SILICON CONTROLLED RECTIFIER Original PDF 60.23KB 1
    2N3670
    Motorola Silicon Controlled Rectifiers Original PDF 326.8KB 2
    2N3670
    General Electric 12.5A silicon controlled rectifier. Vrm(non-rep) 660V. Scan PDF 235.35KB 4
    2N3670
    General Semiconductor (2N3670 - 2N3668) 12.5A SILICON CONTROLLED RECTIFIERS Scan PDF 267.2KB 4
    2N3670
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 124.91KB 1
    2N3670
    Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF 78.29KB 1
    2N3670
    Unknown Shortform Electronic Component Datasheets Short Form PDF 39.6KB 1
    2N3670
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.17KB 1
    2N3670
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 36.37KB 1
    2N3670
    Unknown Short Form Datasheet and Cross Reference Data Short Form PDF 175.85KB 1
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    2N367 Price and Stock

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    Microchip Technology Inc 2N3676

    Small-Signal BJT
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    Master Electronics 2N3676
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    Microchip Technology Inc 2N3676 40 Weeks
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    Onlinecomponents.com 2N3676
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    Microchip Technology Inc 2N3675

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    Microchip Technology Inc 2N3675 40 Weeks
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    Onlinecomponents.com 2N3675
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    Central Semiconductor Corp 2N3670 TIN/LEAD

    SCR 600V 16A 2-Pin TO-9 Sleeve (Alt: 2N3670 TIN/LEAD)
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    ECS International Inc ECXV-P35C2N-36.70016

    - Trays (Alt: ECXV-P35C2N-36.70016)
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    Avnet Americas ECXV-P35C2N-36.70016 Tray 17 Weeks 10
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    New Jersey Semiconductor 2N3670

    Thyristor SCR 400V 200A 3-Pin(2+Tab) Case 54-05
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    Bristol Electronics 2N3670 1,073 1
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    2N367 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5066

    Abstract: TELEDYNE CRYSTALONICS 2N3677 veam
    Contextual Info: U L T R A LOWrEC sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS G E O M E T R Y 292, PG. 57 (2N3677) G E O M E T R Y 414, PG. 57 (2N5066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) rEc ^sat* 4 Ohms TYPICAL


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    2n36772n50662n3677/2n159khz+2teledyne crystalonicsveam PDF

    Contextual Info: U nc, 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 301 376-2922 (212)227-6005 FAX: (201) 376-8960 ULTRA LOWr.c (sat) SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS COMPLEMENTARY TYPES 2N3677 (PNP) 2N5068INPN) rgc ''»<> 4 Ohms TYPICAL


    Original
    2n36772n5068inpnli/16159khz PDF

    Contextual Info: 2N3678 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)55 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.


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    2n3678freq250m PDF

    Contextual Info: DIGITRON SEMICONDUCTORS 2N3668-2N3670, 2N4103 12.5A SILICON CONTROLLED RECTIFIER MAXIMUM RATINGS Rating Symbol 2N3668 2N3669 2N3670 2N4103 Units Non-repetitive peak reverse voltage VRM 150 330 660 700 V Peak repetitive reverse voltage VRRM 100 200 400 600


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    2n3668-2n36702n41032n36682n3669+22n3670mil-prf-19500 PDF

    2N3742

    Abstract: bc140 Bc300 BC300-5 2N3678 2N4237 2N4926 2N5320 2N5321 2N5681
    Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. 2N3678 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^cao ^CEO ^EBO (V) (V) (V) Pd (W) Min Min Min @Tc=25°c 75 55 6 0.8 'c 'cm (A) (A) 'c 8 0 W ^CB 'ces ^CE e (V) (ma)


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    2n36782n3742bc140-10bc140-16+13bc141bc141-10bc141-16bc141-6bc300bc300-4bc140bc300-52n42372n49262n53202n53212n5681 PDF

    2N3670

    Abstract: scr 2n3668 scr silicon controlled rectifiers 2N3668-2N3670 scr 2N3669 2N3669 2N4103 2N3688 scr RCA 2N3670 ta2621
    Contextual Info: fi E SOLI» STATE "Üb 3 8 7 5 0 8 1 G E S O L ID S T A T E Silicon Controlled Rectifiers- dF 01E | 3 fl7 5 []fll D 01 7 k f l 4 17684 2N3668-2N3670, 2N4103 File Num ber 12.5-A Silicon Controlled Rectifiers 116 TERMINAL DESIGNATIONS For Low-Cost Power-Control and Power-Switching


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    3fl75d017kfl42n3668-2n36702n4103+92n36682n36692n3670scr 2n3668scr silicon controlled rectifiersscr 2n36692n3688scr rca 2n3670ta2621 PDF

    Contextual Info: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)


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    2n3676o205ad19-jun-02 PDF

    2N367

    Contextual Info: 2N3675 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3675 Availability Online Store


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    2n3675stv3208lm3909nlm3909+12n367 PDF

    2N3669

    Abstract: scr 2n3668 2N3668 2N3670 2n4103 2n3668 datasheet
    Contextual Info: Datasheet 2N3668 2N3669 2N3670 2 N 4 1 03 SILICON CONTR O L L ED REC TI FI E R 16 AMPS 220 THRU 800 VOLTS 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-3 CASE


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    2n36682n36692n36702n4103+3hermetica11scr 2n36682n3668 datasheet PDF

    Contextual Info: ULTRA LOWree sat 2N3677 2N5066 SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS GEOMETRY 2*2, (2N3677) GEOMETRY 485, (2NS066) • • • • • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN) iec ,” tl 4 Ohms TYPICAL LOW G * LOW LEAKAGE HIGH BVebo


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    2n36772ns0662n50662n3677/2n5066+1159khz PDF

    2n4319

    Abstract: 2N4195 2N3940 2N3990 2n4369 2n4158 IR122D3 2n3986 rca TYN40BG 2N3754
    Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755


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    2n36692n36702n36792n3753+152n37542n37552n37562n37572n37582n37592n43192n41952n39402n39902n43692n4158ir122d32n3986 rcatyn40bg PDF

    2N3677

    Abstract: 2N5066 CDA11
    Contextual Info: D /A SWITCHiES These circuits are designed specifically fo r D /A conversion, where low and stable Ron is of primary concern. Most o f these circuits use our own epitaxial junction bipolar transistors such as the 2N3677 and 2N5066. In addition to low Ron , most have an offset voltage of under 1 m illivolt. A ll of our circuits w ill


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    2n36772n5066to-10v10ks2+2cda11cda11-s12 PDF

    scr 2n3668

    Abstract: scr 2N3669 2N3688 scr RCA 2N3670 2N4103 2N3669 RCA 2N3669 2N3668 2N3668-2N3670 2N3670
    Contextual Info: 2N3668-2N3670, 2N4103 File Num ber 116 TERMINAL DESIGNATIONS 12.5-A Silicon Controlled Rectifiers For Low-Cost Power-Control and Power-Switching Applications Features: • ■ ■ ■ ■ Low switching losses High dl/dt and dv/dt capabilities Low leakage currents, both forward and reverse


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    2n3668-2n36702n41032n36682n3669+62n3670scr 2n3668scr 2n36692n3688scr rca 2n3670rca 2n3669 PDF

    Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^CBO ^C E O ^EBO PD Min (V) Min (V) Min (W) 0Tc=25°c 75 55 6 0.8 m 2N3678 'c (A) 0.8 *CM (A) ^CBO (PA) Max 0.01 VC8 *CES e (V)


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    2n3678 PDF

    Contextual Info: 2N3677 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n3677 PDF

    2N4319

    Abstract: ST SEMICON INC aeg diode Sid 20 l 2N4205 2N4193 2N4166 2N4177 2N3759 TAG 600 2N4180
    Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Part Number Manufacturer Manufacturer 2N3669 2N3670 2N3679 2N3753 GnrlElec/GE Natl Elecs Inti Rectfr St Semicon 2N3898 Franel Corp Inti Rectfr Semitronics 2N3754 GnrlElec/GE Natl Elecs 2N3755


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    2n36692n36702n36792n3753+152n37542n37552n37562n37572n37582n37592n4319st semicon incaeg diode sid 20 l2n42052n41932n41662n4177tag 6002n4180 PDF

    SDT423

    Abstract: SDT425 185 to3 SDT411 transistor sdt423 2N2983 2N2984 2N2985 DSASW0036859 2N3418
    Contextual Info: Device Type 2N2983 2N2984 2N2985 2N2986 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 2N3675 2N3676 2N3878 2N3902 2N5157 SDT402 SDT403 SDT409 SDT410 SDT411 SDT423 SDT424 SDT425 2N4231 2N4232 2N4233 2N5074 2N5075 2N5076 2N5077 2N5466 2N5467 2N5468 2N5469 2N5664


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    2n29832n29842n29852n2986+122n34182n34192n34202n34212n35062n3507sdt423sdt425185 to3sdt411transistor sdt423dsasw0036859 PDF

    Contextual Info: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)


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    2n3676o205ad17-jul-02 PDF

    Contextual Info: Microsemi NPN Transistors Part Number NPN JANTX2N5339 JANTXV2N5339 2N5148 2N5150 2N4863 2N2657 2N4895 2N4896 2N2658 2N4897 2N3619 2N3E20 2N3627 2N3928 2N3623 2N3628 2N5541 2N5327 i 2N3675 : 2N3676 2N5237 2N5237S JAN2N5237 JAN2N5237S JANS2N5237 JANS2N5237S


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    PDF

    2N5066

    Contextual Info: aN sC RYSTALO N IC SsssO W ebsite: W W W .Crystalonics.com Phone: 631:981-6140 Fax:(631-585-4858) * S e e price list for o rd e rin g inform ation U L T R A LOW rcc (sat) P N P / N P N S W IT C H IN G T R A N S I S T O R S 2N3677 2N3677UB 2N5066 2N5066UB


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    2n36772n50662n3677ub2n5066ub+22n3677/2n5c6s159khz PDF

    2N3676

    Contextual Info: 2N3676 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 90V 0.41 (0.016) 0.53 (0.021)


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    2n3676o205ad1-aug-02 PDF

    2N5066

    Abstract: T37Z 2N3677
    Contextual Info: TELEDYNE COMPONENTS 5ÖE D fiW b G S O GD bS äT T ULTRA LOWree sat 2N 3677 SILICON EPITA XIA L JUNCTION PNP/NPN SWITCHING TRANSISTORS 2N5066 GEOMETRY 292, (2N3677) GEOMETRY 485, (2N5066) T - 3 7 - 2 Ì jr-sr-Li • COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)


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    2n36772n5066n5066t-37-zi+32n3677/2n5066159khzt37z PDF

    2N5066

    Abstract: 2N3677/2N5066
    Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 ULTRA LOWfEc sat SILICON EPITAXIAL JUNCTION PNP/NPN SWITCHING TRANSISTORS USA • • • • • TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3677 2N5066 COMPLEMENTARY TYPES 2N3677 (PNP) 2N5066(NPN)


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    2n36772n50662n3677/2n5066159khz PDF

    2N3678

    Contextual Info: Datasheet Central Sem iconductor Corp. 2N3678 NPN S ILIC O N TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T 0 - 3 9 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3678 is a Silicon NPN Epitaxial Planar Transistor designed for


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    2n3678t0-39150ma500ma+1100mhz PDF