2N3638 2N3638 Search Results

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

2N3638

Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW

2N3638

Abstract: transistor 2n2222 TO-90 2N3638 transistor 2SS52M-S 2n2222 npn transistor honeywell 2SS52M Series 2SS52M 2SSP 2N2222 HJ 6 C
Contextual Info: 3 1 1- i s n Honeywell Installation Instructions for the 2SS52M Series Magnetoresistive Position Sensors A WARNING PERSONAL INJURY • DO NOT USE these products as safety or emergency stop devices, or in any other application where failure of the product could

2N3638

Abstract: MPS8093 2N3072 MPS6534 motorola 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n3136 2n2907a motorola
Contextual Info: MOTOROLA SC -CDIODES/OPTO} ' 34 ]>F|b3t,75SS 3037^70 H 6367255 M O T O R O L A SC (DIODES/OPTO f 3^C ~ 37978 T^3 7 -/7 SILICO N SM ÂLL-SIG NAL TR A N SISTO R DICE (continued) 2C2907A DIE NO. — pnp LINE SOURCE — DMB151 C« This die provides performance equal to or better than that of the following

2N4148

Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.

2N3638

Abstract: 2N3644 2N3645 2N3638A CIL297 2N4354 2N4355 2N4356 CIL295 CIL296
Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP M a x m u m P a t in g s 2N4356 V CBO V CEO V EBO (V) Min (V) Min (V) BO SO Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 5.0 45 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat)

2n3638

Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP Maxim um R atin gs 2N4356 2N364S V CBO VCEO V EBO (V) Min (V) Min (V) Min BO B0 5.0 60 2N4354 2N4355 2N3644 60 60 45 60 60 60 45 IcBO (MA) Max 0.05 V CB (V) Min 50 5.0 5.0 5.0 5.0 »FE Max 0.05 0.04 50 50 30 VCE(Sat)

Contextual Info: Unipolar Digital Hall-Effect Sensor ICs SS340RT/SS440R Series Datasheet Unipolar Digital Hall-Effect Sensor ICs The SS340RT/SS440R sensor ICs are small, versatile digital Hall-effect devices that are operated by the magnetic field from a permanent magnet or an electromagnet. They are designed to respond to a single pole: North SS340RT or South

2N3644

Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
Contextual Info: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max

2N3566

Abstract: 2N3638 2N3638A bc119 NPN BC738 PN6076 2n3638 fairchild high voltage npn to-92 BC728-6 MPS3393
Contextual Info: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item DEVICE NO. Polarity NPN PNP hpE @ ic VCEO (V c e r ) (hfe) V mA Min/Max Min VCE(sat) v

2N5139

Abstract: 2N4121 2N4122 EN3904 2n3569 2n3569 to-105 2n4355 2N3906/MPSA70
Contextual Info: TRANSISTORS—SMALL SIGNAL PNP GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) *V CER * VOLTS TYPE MIN V CE(sat) LU LL V CEO VOLTS @ *c mA MAX hlFE MIN - MAX @ @ 50 @ 2N5221

2N3638

Abstract: 2N3638A replacement for 2n2905 2N5816 2N5815 HS5810 2n2905 replacement 2N6003 2N5819 2N6006
Contextual Info: NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO 18 PACKAGE @ 10mA Min. V 'E- (i'll 1 @ 500mA, 50mA Max. (V (V) VCEO hFF (a) 2V, 2mA Type 2 N 5810 60-200 * 2N5812 150-500 * 2 N 5814 60-120 C cb @ 10V Typical Pt Ta = 2!5°C (mW) Typical

2N3638 equivalent

Abstract: 2N3638 mos inverter 74HC04 led and phototransistor simple circuit
Contextual Info: More Speed from Optocouplers Appnote 5 by David M. Barton Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must “sink” the current from one T2L load plus a pull-up resistor to VCC. The

2N5133

Abstract: to 106 2n5133 2N3638A 2N3563 2N3638 2N3644 2N5088 2N5089 2N5127 2N5131
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NO ISE LE V E L A M P LIF IE R Cont'd. a Vcb V CE V EB I'F E at •c VCE V V V min max mA V 2N 5088 2 N 5089 2N5127 2N5131 2N5133 30 25 20 20

2N3563

Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

2N3638

Abstract: 2N3638A MPS-3638A MPS3638A NT 407 F MPS3638 2N3638/A "2n3638"
Contextual Info: MPS3638 silicon MPS3638A NPN SILICON A N N U LA R TRANSISTORS . designed for high-current switching applications. NPN SILICON Collector-Emitter Sustaining Voltage — VCEQ(sus) = 25 Vdc (Min) SWITCHING TRANSISTORS DC Current Gain Specified — 1.0 mAdc to 300 mAdc

2N3638 datasheet

Abstract: 2N3638 equivalent 2N3638 led and phototransistor simple circuit 74HC04
Contextual Info: More Speed from Optocouplers Appnote 5 Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must “sink” the current from one T2L load plus a pull-up resistor to VCC. The

2N3563

Abstract: 2N3645 to 106 2n5133 2N3638 2N3638A 2N3644 2N5133 2N5088 2N5089 2N5127
Contextual Info: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. a Vcb VCE V EB I'FE at •c VCE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15

2N3638

Abstract: 2N3638 equivalent 2N3638 datasheet 74HC04 for 74hc04 83705 R/optocoupler base resistor
Contextual Info: VISHAY Vishay Semiconductors More Speed from Optocouplers Appnote 5 Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must "sink" the current from one T2L load

led and phototransistor simple circuit

Abstract: 2N3638 74HC04 Pulse Drive LED optocoupler base resistor
Contextual Info: More Speed from Optocouplers Appnote 5 Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must “sink” the current from one T2L load plus a pull-up resistor to VCC. The

2N3638

Abstract: 2N2907 SOT-23 2n2907 SOT23 2N2907 LM312 LM334 LM4250C
Contextual Info: Advanced Monolithic Systems AMS3100-1.2 MICROPOWER VOLTAGE REFERENCE FEATURES APPLICATIONS • ±6 mV ±0.5% max. initial tolerance (A grade) • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.240 • Max. 0.5Ω Ω Dynamic Impedance (A grade)

2N3638

Abstract: 2N3638 datasheet AMS9491 AMS9491A AMS9491AN AMS9491AS AMS9491B AMS9491BN AMS9491BS LM334
Contextual Info: Advanced Monolithic Systems AMS9491 1.235V VOLTAGE REFERENCE FEATURES APPLICATIONS • ±10 mV max. initial tolerance A grade • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Ω Dynamic Impedance (A grade) • Low Temperature Coefficient