2N3584 NPN Search Results

2N3584

Abstract: transistor 2n3584
Contextual Info: 2N3584 Complementary medium-power high voltage power transistor 11. 1 of 1 Home Part Number: 2N3584 Online Store 2N3584 Diodes C o m plem entary m edium - po w er high v o ltage po w er t rans is to r

2N3584

Contextual Info: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C

Contextual Info: m 2N3584 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES lc 2.0 A V ce 250 V P diss 35 W @ Tc = 25 °C Tj -65 °C to +200 °C

2N3738 equivalent

Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2N4240

Abstract: 2N3583 2N3584 2N3585 2N6420 2N6421 2N6422 2N6423 2N6420-2N6421
Contextual Info: COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS NPN 2N3583 2N3584 2N3585 2N4240 . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators,convertors, deflection stages and high fidelity amplifiers.

2N3584

Abstract: 2N3585 2N3583 transistors 2n3585
Contextual Info: NPN 2N3583 – 2N3584 – 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage IE= 0

ic1a

Abstract: 2N3584 2N358 IC 1A 2N3584 inchange
Contextual Info: Inchange Semiconductor Product Specification 2N3584 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25℃ ·VCE SAT =0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification

2N3585

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 384 Devices Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

2N3584

Abstract: 2N3585 transistor 2n3584
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/384 Devices Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

2N5428

Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2N3585

Abstract: 2N3584 2N3584 JAN transistor 2n3584 MIL-PRF-19500/384
Contextual Info: TECHNICAL DATA 2N3584 JAN, JTX, JTXV 2N3585 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/384 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage

2N4240

Abstract: 2N6420 2N6422 2N6423 2N6421 2N3583 2N3584 2N3585 n642
Contextual Info: MOS PEC COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS NPN 2N3583 2N3584 2N3585 2N4240 . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators,convertors, deflection stages and high fidelity amplifiers.

Contextual Info: 2N3584 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

40312

Abstract: 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049
Contextual Info: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912

2N3584

Abstract: 2N3584 JANTX
Contextual Info: 2N3584 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

Contextual Info: PLESSEY SEMICOND/DISCRETE i 7220533 PLESSEY SEMICOND/DISCRETE DE~| 732D533 0G04C1S5 b | ~ 95D 04952 r-33-i/ HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 Package •c TO-39 <2A V C E0 Volts 2N3440 250 2N3584

2N372A

Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
Contextual Info: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665

Contextual Info: 2N3584 MECHANICAL DATA Dimensions in mm inches 6.35 (0.250) 8.64 (0.340) 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) 3.68 (0.145) rad. max. Bipolar NPN Device in a

2N3534

Abstract: 2N3583 2N3584 2N3533 2N3563 2N3503 2N3585 2n358s N3584 2N3584 NPN
Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS mm TO-66 915 min. - — - — 1 90 max. 1 1 Î 12.65 max. 0.85 0.70 T — — 8 .64 max ABSOLUTE MAXIMUM RATINGS v cso Collector-base voltage {lE — 0)

200V transistor npn 10a

Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

2n3583

Abstract: 2N3585
Contextual Info: 2N3583 2N3584 2N3585 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 series devices are silicon NPN transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

vbe 10v, vce 500v NPN Transistor

Abstract: 300V transistor npn 2a common emitter amplifier curve tracer SAT Line Amplifier 2N3584
Contextual Info: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3584 APPLICATIONS: • • • Off-Line Inverters Switching Regulators Motor Controls • • • Deflection Circuits DC-DC Converters High Voltage Amplifiers

200V transistor npn 10a

Abstract: 2N3583 2N3584 2N3585 200V 100MA NPN transistor 200V 100MA NPN
Contextual Info: HataSheet 2N3583 2N3584 2N3585 CGVIIiu1 acniiwiiiinuwKor %iirpa NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3583 series types are Silicon NPN Transistors designed for high speed

2N3583

Abstract: 2N4240 2N36 2N35
Contextual Info: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits