2N3227 Search Results

2n3245

Abstract: 2N3244 2N3227
Contextual Info: MOTOROLA SC 2N3227 XSTRS/R F 12E I 0Dfltj303 M fc>3b?a54 I r -3 7 -/r For Specifications, S e e 2N 2368 Data. M A X I M U M R A T IN G S Sym bol 2N3244 2N3245 Unit Collector-Emitter Voltage V cEO 40 50 Vdc Collector-Base Voltage V cB O 40 50 Vdc Emitter-Base Voltage

N2369

Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A
Contextual Info: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12

Contextual Info: 2N3227+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition)20

Contextual Info: 2N3227 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3227J

2N3227

Abstract: 2N3227J 2N3227JS 2N3227JV 2N3227JX
Contextual Info: 2N3227 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3227J

2N2369 equivalent

Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
Contextual Info: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL “@ HIGH-SPEED for SWITCHING @ @ APPLICATIONS e e . Switching Times and Saturation Voltage Specified at Two Current Levels l= at 10 mA and 100 mA ● @ @ Low Input and Output Capacitance CO~= Ci~ = 4 pf matimum

2C2369A

Abstract: 2c2369
Contextual Info: 2N3227 Chip Type 2C2369A Geometry 0005 Polarity NPN 8.98 Transisto. 1 of 1 Home Part Number: 2N3227 Online Store 2N3227 Diodes C hip Ty pe 2 C 2 3 6 9 A G eo m et ry 0 0 0 5 Po larity NPN Transistors

Contextual Info: 2N3227 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3227J • JANTX level (2N3227JX)

Contextual Info:



 


   The 2N3227 is Designed for General Purpose Low Current Switching Applications  
   MAXIMUM RATINGS

 

   
  
 
        
      
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Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302

2N2369

Abstract: 2N2369 datasheet 2N2368 2N3227 Am29BDD160GB-65ADPE1 2N2369A 2N4449 2n2369 die 2C2369A chip type geometry
Contextual Info: Data Sheet No. 2C2369A Generic Packaged Parts: Chip Type 2C2369A Geometry 0005 Polarity NPN 2N2368, 2N2369, 2N3227, 2N4449 Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

2N3227UB

Abstract: 2N3227UBJ 2N3227UBJS 2N3227UBJX NPN switching power transistor
Contextual Info: 2N3227UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3227UBJ

2N3227

Contextual Info: NPN 2N3227 SILICON ANNULAR TRANSISTORS The 2N3227 are silicon NPN silicon annular transistors for low-current, high-speed switching applications. They are mounted in Jedec TO-18 metal. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO VCEO VEBO VCES Collector-Base Voltage

2N2369 equivalent

Abstract: 2N2369 MA 4108 2N2369A MOTOROLA 2N2368 2N3227 MOTOROLA 2N3227 2N2369A J 2N2369 St 2N2369
Contextual Info: MOTOROLA SC XSTRS/R F M A X IM U M R A T IN G S Symbol Rating Collector-Emitter Voltage Value Vdc 15 20 2N2368,9,A 2N3227 Collector-Emitter Voltage VCES 40 Vdc Collector-Base Voltage VCBO 40 Vdc Emitter-Base Voltage Ve b o 4.5 6.0 'C Peak 500 mA Collector Current — Continuous

Contextual Info: 2N3227 m \\ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3227 is Designed for General Purpose Low Current Switching Applications MAXIMUM RATINGS 200 mA lc 20 V ce P diss 1.2 W @ Tc = 25 °C Tj -65 °C to +200 °C T -65 °C to +200 °C stg 145 °C/W 0JC STATIC CHARACTERISTICS

2N3227

Contextual Info: 2N3227UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3227UBJ

2N3227

Contextual Info: 2N3227 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3227J • JANTX level (2N3227JX)

2n2369a

Abstract: 2N4449 2N3227
Contextual Info: SEMICONDUCTOR I TECHNICAL DATA 2N2369A 2N3227 2N4449 NPN Silicon Small-Signal Transistors . designed for general-purpose switching applications. MAXIMUM RATINGS Symbol 2N2369A 2N3227 2N4448 Coilector-Emitter Voltage Rating VCEO 15 20 15 Unit Vdc Collector-Emitter Voltage

2N2369A

Abstract: 2n4449
Contextual Info: SEMICONUUU I UK TECHNICAL DATA 2N2369AJAN, JTX, JTXV, JANS 2N3227JAN, JTX, JTXV 2N4449JAN, JTX, JTXV Processed per MIL-S-19500/317 NPN Silicon Small-Signal Transistors designed for general-purpose switching applications M A X IM U M R A T IN G S Rating Symbol

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

BT2222A

Abstract: BT2222 2N2222 BT3501 BT51 2N2708 2N2944 2N2483 2N24B4 2N929
Contextual Info: Discrete Devices Beam Lead Chips Transistor Chips 1 0 0 % Probed Parameters @ 2 5 ° C Partial List Function Polarity Similar Typ e BVCBO Volts E IA ly p e M in @ 10 n A BVCEO Volts M in @ 10 m A BVe b O V olts M in @ 1 0 u A Hf e @ Ic mA M in/M ax Mech.

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

2N1026

Abstract: 2N1025 2N328A 2N760A 2N2708 2N327A 2N327B 2N328B 2N329A 2N329B
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF