2N2905 EQUIVALENT Search Results

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

diode D07-15

Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification

BFY52 equivalent

Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device

OP97

Abstract: 2N2905 ADR03 REF03 REF03GP OP-43
Contextual Info: 2.5 V Precision Voltage Reference REF03 FEATURES 2.5 Voltage Output, ؎0.6% Max Wide Input Voltage Range, 4.5 V to 33 V Supply Current 1.4 mA Max Output Voltage Tempco, 50 ppm/؇C Max Line Regulation, 50 ppm/V Max Load Regulation, 100 ppm/mA Max Extended Industrial Temperature Range, –40؇C to +85؇C

2N2475

Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type

NPN C460

Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Contextual Info: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25

equivalent diode for in457

Abstract: IN457 equivalent kelvin 1102 2n2905 replacement 2N2905 cross reference replacement for 2n2905 resistor cross reference strain guage LT1031 PLATINUM RESISTOR
Contextual Info: LT1031/LH0070 Precision 10V Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1031 is a precision 10V reference with ultralow drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

2N2905 cross reference

Abstract: AC01 DAC ad581 replacement for 2n2905 rosemount LH0070 LT1031 LT1031B LT1031C LT1031D
Contextual Info: LT1031/LH0070 Precision 10V Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1031 is a precision 10V reference with ultralow drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The

TP0033

Contextual Info: "^TELEDYNE COMPONENTS TP0033 HIGH-SPEED, UNITY-GAIN BUFFER/DRIVER AMPLIFIER FEATURES GENERAL DESCRIPTION • ■ The TP0033 is a high-speed, high-input impedance, unity-gain buffer amplifier that is pin, package and perfor­ mance equivalent to the ubiquitous LH0033. This device

2N3638 equivalent

Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813

LT1236-5

Abstract: 236bi5 LT1236C-5 236ac5 LT1236-10 236BI1 236ac1 AD586 236ai5 LT1236
Contextual Info: LT1236 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1236 is a precision reference that combines ultralow drift and noise with excellent long-term stability and high output accuracy. The reference output will both

Contextual Info: LT1236 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1236 is a precision reference that combines ultralow drift and noise with excellent long-term stability and high output accuracy. The reference output will both

C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

2N2904 equivalent

Abstract: 121-219
Contextual Info: 2N2904AL and 2N2905AL Qualified Levels: JAN, JANTX, JANTXV and JANS PNP SWITCHING SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904AL and 2N2905AL switching transistors are military qualified up to the

Contextual Info: LT1021 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Ultralow Drift: 5ppm/°C Max Slope Very Low Noise: <1ppm P-P 0.1Hz to 10Hz 100% Noise Tested Pin Compatible with Most Bandgap Reference Applications, Including Ref 01, Ref 02, LM368,

BSS56

Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

2N2219 transistor substitute

Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

equivalent mje13005

Abstract: mje13005 MJE13005L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 „ These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

2N3053 equivalent

Abstract: bf258 equivalent 2N2219 2N2905 BC107 equivalent transistors bc109 equivalent BF178 BC107 pnp equivalent BC177 equivalent bc303 f-002
Contextual Info: Metal Can Complementary Pairs Maximum ratin ps BV Case | Device Type Polarity Core Drivers BV BV CBO CEO EBO ICM V V V mA hFE1 Ic mA min. max. Ic mA HFE2 fT min. min. max. MHz VCE sat IC mA V 2N3724A NPN 2N3725A NPN T039 T039 50 80 30 50 6 6 1200 1200 100

2n2222 h parameter values

Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

equivalent mje13005

Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.