2N2905 EQUIVALENT Search Results

2N2905

Abstract: equivalent transistor 2N2905 2N2905 equivalent 2N2905 transistor 2n2904 2N2905a equivalent 2N2905A 2N2904 equivalent TRANSISTOR 2n2904 2N2905a JANTX
Contextual Info: 2N2904 A and 2N2905(A) Qualified Levels: JAN, JANTX, JANTXV and JANS PNP SWITCHING SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/290 DESCRIPTION This family of 2N2904 and 2N2905A switching transistors are military qualified up to the JANS

2N2905 equivalent

Abstract: 2N2905a equivalent 2N2905 2N2904 2N2905A 2n2905a jantx 2N2904A equivalent transistor 2N2905 transistor 2N2905 2N2905 transistor
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SWITCHING SILICON TRANSISTOR

2N2905

Abstract: 2N2905 equivalent 2N2905 transistor TRANSISTOR 2n2904 2N2905a equivalent 2N2904 PNP Transistor 2n2905a jantx 2N2904 2N2904A 2N2904AL
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. INCH-POUND MIL-PRF-19500/290N 20 September 2010 SUPERSEDING MIL-PRF-19500/290M 27 May 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES, 2N2904,

equivalent transistor 2N2905

Abstract: 2N2905a equivalent 2N2905 2n2905a jantx TRANSISTOR 2n2904 transistor 2N2905 2N2904 2N2904A 2N2904AL 2N2905A
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 April, 2004. MIL-PRF-19500/290K 27 February 2004 SUPERSEDING MIL-PRF-19500/290J 3 July 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N2904,

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

diode D07-15

Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification

BFY52 equivalent

Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device

op43

Abstract: 2n2905 013 ADR03 REF03
Contextual Info: 2.5 V Precision Voltage Reference REF03 FEATURES PIN CONFIGURATION 2.5 voltage output, ±0.6% max Wide Input voltage range, 4.5 V to 33 V Supply current 1.4 mA max Output voltage tempco, 50 ppm/°C max Line regulation, 50 ppm/V max Load regulation, 100 ppm/mA max

OP97

Abstract: 2N2905 ADR03 REF03 REF03GP OP-43
Contextual Info: 2.5 V Precision Voltage Reference REF03 FEATURES 2.5 Voltage Output, ؎0.6% Max Wide Input Voltage Range, 4.5 V to 33 V Supply Current 1.4 mA Max Output Voltage Tempco, 50 ppm/؇C Max Line Regulation, 50 ppm/V Max Load Regulation, 100 ppm/mA Max Extended Industrial Temperature Range, –40؇C to +85؇C

DSA003223

Abstract: resistor 2n2905 2N2905 ADR03 OP97 REF03 REF03GP
Contextual Info: 2.5 V Precision Voltage Reference REF03 FEATURES 2.5 Voltage Output, ؎0.6% Max Wide Input Voltage Range, 4.5 V to 33 V Supply Current 1.4 mA Max Output Voltage Tempco, 50 ppm/؇C Max Line Regulation, 50 ppm/V Max Load Regulation, 100 ppm/mA Max Extended Industrial Temperature Range, –40؇C to +85؇C

2n2905 configuration circuit and

Abstract: 1N4148 2N2905 AD7393 AD8603 ADR03 MS-001 OP97 REF03
Contextual Info: 2.5 V Precision Voltage Reference REF03 FEATURES PIN CONFIGURATION 2.5 voltage output, ±0.6% maximum Wide input voltage range: 4.5 V to 33 V Supply current: 1.4 mA maximum Output voltage temperature coefficient: 50 ppm/°C maximum Line regulation: 50 ppm/V maximum

2N2475

Abstract: 2N2907 equivalent 2N2369 equivalent f025 ic marking z7 2N929 2N930 BAW63 2N2369 FERRANTI BFS36
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type

NPN C460

Abstract: 2N2907 equivalent c496 2N2906 equivalent 2N2905 equivalent 2n2484 complementary 2N2907 t018 C735 BS9300 CV7496
Contextual Info: Metal Can Complementary Pairs Core Drivers | Polarity Maximum ratin ps 2N 3724A 2N 372 5A NPN N PN T039 T0 3 9 50 80 30 50 6 6 1200 1200 100 100 60 60 150 150 1500 1500 25 20 — - 300 300 100 100 0.20 0.26 2N 3244 PN P T0 3 9 40 40 5 1000 500 50 150 750 25

2n4148

Abstract: equivalent transistor 2N2905
Contextual Info: TEA5701 3 CHANNEL, LARGE BAND HEAD AMPLIFIER FOR VCR . . . . . . . . PLAY-BACK MODE LOW NOISE PERFORMANCE LARGE BANDWIDTH SVHS PROCESSING CAPABILITY AUTOMATIC OFFSET CANCELLER BETWEEN TWO SELECTED HEADS RECORD AMPLIFIER INHIBITION DURING PLAYBACK DIRECT DRIVE OF COAXIAL CABLE (500Ω 100pF) OF PLAY-BACK OUTPUT

equivalent diode for in457

Abstract: IN457 equivalent kelvin 1102 2n2905 replacement 2N2905 cross reference replacement for 2n2905 resistor cross reference strain guage LT1031 PLATINUM RESISTOR
Contextual Info: LT1031/LH0070 Precision 10V Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1031 is a precision 10V reference with ultralow drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The

NPN pnp MATCHED PAIRS 2n2905A 2N2219A

Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Contextual Info: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW

2N2905 cross reference

Abstract: AC01 DAC ad581 replacement for 2n2905 rosemount LH0070 LT1031 LT1031B LT1031C LT1031D
Contextual Info: LT1031/LH0070 Precision 10V Reference U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1031 is a precision 10V reference with ultralow drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The

TP0033

Contextual Info: "^TELEDYNE COMPONENTS TP0033 HIGH-SPEED, UNITY-GAIN BUFFER/DRIVER AMPLIFIER FEATURES GENERAL DESCRIPTION • ■ The TP0033 is a high-speed, high-input impedance, unity-gain buffer amplifier that is pin, package and perfor­ mance equivalent to the ubiquitous LH0033. This device

2N3638 equivalent

Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813

LT1236-5

Abstract: 236bi5 LT1236C-5 236ac5 LT1236-10 236BI1 236ac1 AD586 236ai5 LT1236
Contextual Info: LT1236 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1236 is a precision reference that combines ultralow drift and noise with excellent long-term stability and high output accuracy. The reference output will both

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: LT1236 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1236 is a precision reference that combines ultralow drift and noise with excellent long-term stability and high output accuracy. The reference output will both

C495 transistor

Abstract: c638 transistor EQUIVALENT TRANSISTOR bc108 C756 TRANSISTOR PNP Transistor 2N2222 equivalent C735 transistor c637 transistor transistor c495 TRANSISTOR bc107 current gain c372 transistor
Contextual Info: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra

BC107 equivalent transistors

Abstract: 2N2475 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302 BS9365
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A