2N2646 2N2647 Search Results

transistor motorola 2n2646

Abstract: 2N2646 motorola motorola 2n2646 2N2646 Vp motorola eb20 2N2646 Unijunction transistor 2N2646 of 2N2647 MOTOROLA motorola power transistor to-126 SCR 2N2646
Contextual Info: MOTOROLA SC DIODES/OPTO 25E D b3t.7HSS 0000*100 b WÊ7 2N2646 2N2647 PN Unijunction Transistors Silicon PN Unijunction Transistors . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:

GES2646

Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
Contextual Info: G E SOLID STATE 3875081 Öl G E SOLID STATE »T|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors

2n2646

Abstract: 2n2647
Contextual Info: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage

2N2646

Abstract: SCR 2N2646 2N2646 CIRCUIT 2n2647 High power SCR 2n2646 equivalent 2N2646 transistor datasheet transistor 2N2646 2n2646 2n2647 2n2646 of symbol
Contextual Info: 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

2N2646

Abstract: Unijunction transistor 2N2646 of 2N2646 Vp 2N2647 rbbo 2N2646 transistor 2N2646 CIRCUIT transistor 2N2646 2N2646 -pin configuration Maa 435
Contextual Info: Datasheet central Sem iconductor Corp. 2N2646 2N2647 S IL I C O N UNIJUNCTION TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T O - 18 CASE* Manufacturers of World Class Discrete Semiconductors DESCRIPTION

2n2646

Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418
Contextual Info: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A 2N2422B 2N2646

GES2646

Abstract: 2N2646 Vp GES2647 2n2646 2n2646 to 92 Unijunction transistor 2N2646 of 2n2647 2n2646 of symbol transistor 2N 2646 2N 2646
Contextual Info: G E SOLID STATE 3875081 Ôï G E SOLID STATE »T|3fl7SDÔl 01E GD1 7 tm 17999 fl D T -“ 3 7 - a , / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92

2N2646

Abstract: 2N2646 transistor TO-220 2N2646
Contextual Info: DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 300 mW IE(EMS) 50 mA IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage

2N2646

Abstract: Unijunction transistor 2N2646 of 2N2646 transistor 2N2647 2N2646 CIRCUIT SCR 2N2646 transistor 2n2647 transistor 2n2646 2N2646 Vp 2n2646 2n2647
Contextual Info: Boca Semiconductor Corp. BSC P N U nijunction T ran sistors Silicon PN Unijunction Transistors 2N2646 2N2647 . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature: • Low Peak Point Current — 2/xA (Max)

2N2646

Abstract: High power SCR 2n2647 SCR 2N2646 2N2646 CIRCUIT transistor 2N2646 power scr 2n2646 of symbol rbbo "Power scr"
Contextual Info: 2N2646 2N2647 SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches.

2N2646 motorola

Abstract: 2N2647 2N2646 SCR 2N2646 2N2646 Vp motorola 2n2646 02B1 2N264
Contextual Info: M O T O R O L A SC D IOD ES / OP TO 95E D b3b755S QDÖQTQO b m T-iJ'U 2N2646 2N2647 P N Unijunction T ran sisto rs Silicon PN Unijunction Transistors . . designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. These devices feature:

2n2646 2n2647

Abstract: 2N2646 n2646
Contextual Info: TYPES 2N2646, 2N2647 P-N PIANAR SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 5 9 , M A R C H 1 9 7 3 PLANAR UNIJUNCTION TRANSISTORS SPECIFICALLY CHARACTERIZED FOR A WIDE RANGE OF M ILITA R Y AND INDUSTRIAL APPLICATIONS • Planar Process Ensures Low Leakage, Low Drive-Current

2N4947

Abstract: MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264
Contextual Info: IN T R IN S IC S T A N D O F F R A T IO n M IN. r I 2N2417 TYPE 2N 2417A 2N 2417B 2N 2418 2N 2418A 2N 2418B 2N2419 2N241ÔB 2 N2420 2 N2420A 2N 2420B 2N2421 2N 2421A 2N 2421B ! 2N 242 2’ ’ j 2N 2422A • 2N 2422B 2N2646 2N2647 c M A X. 0.51 0.61 0.61 0.51

2N2646

Abstract: 2N4870 2N4871 AD 277 2N2647 KT132A KT133A KT132B
Contextual Info: OflHonepexoAHbie ôwnoëÿpHbie TpaH3MCTopû OôoçHaneHèe A ía n o r Pmax 0,3 ÜMeœ.ôaç. max À 35 la èMn. (A ) 2,0 0,3 35 1,5 (B t ) KT132A KT132B KT133A KT133B rn 2N2646 2N2647 2N4870 2N4871 " 3 a â o fl T P A H 3 È C T O P " PecnyôëM Ka B en ap yc b , 2 2 0 0 6 4 ,

UJT 2N2646

Abstract: UJT 2N2646 specification 2n2646 ujt SCR 2N2646 PUT 2N2646 2N2646 2N2647 SCR firing inverter circuit UJT 2N2646 ratings 2N4891
Contextual Info: UNIJUNCTIONS, TRIG G ERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

2N4148

Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.

Contextual Info: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage

SK9124

Abstract: 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N491A 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871
Contextual Info: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 2N491A Online Store 2N491A Diodes NPN EPITAXIAL PO W ER TRANSISTO R IN TO 6 6 HERM ETIC Transistors P AC KAG E

2N4947

Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2160 2n4948 2N2646 ti 2n1671 2N3483 2N602 2n3479 2N3480
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SEMICONDUCTOR bï » E J n f m b a aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

UJT 2N2646

Abstract: 2n2646 ujt UJT 2N4871 UJT 2N2646 ratings 2N2646 UJT 2N4870 2N2646 TO-92 2N4947 ujt 2N6027 PUT 2N2646
Contextual Info: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I SEMICONDUCTOR INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A

2N2646 TO-92

Abstract: 2N3484 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 Ujts 2N2160 ti 2n1671 2N4947 2N2646 2N4870 2n4948
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P* CENTRAL SEMICONDUCTOR bï »EJnfmba aooaaBb ? i l U N IJ U N C T IO N T R A N S IS T O R S (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a w ide tem perature range. These applications include: Pulse Generators, Saw Tooth

2N5431

Abstract: 2N6028A 2N2160 2N2840 7T6027 2N3483 2N4947 2N494A
Contextual Info: 61C 00236 1989963 CENTRAL SEMICONDUCTOR P*CENTRAL SE MICONDUCTOR bï » E J n f m b a aooaaBb ? UNIJUNCTION TRANSISTORS (UJTs are highly stable trigger devices designed fo r use in a variety o f applications over a wide temperature range. These applications include: Pulse Generators, Saw Tooth

2SH25

Abstract: TIS43 2N4891 2N6115 2N3480 2N4891 unijunction 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2647 MOTOROLA mu4894 2SH21
Contextual Info: UNIJUNCTION TRANSISTORS Item Number Part Number Manufacturer PD Max W Intrinsic Standoff Ratio Min Max Ip Max (A) Iv Max (A) Interbase Resistance Min (Ohms)Max VB2Bl Max (V) Operating Temperature Min (OC) Max Package Style NP (P-Typ_ Bas_) KT119A KT119B

TDA3541

Abstract: tda3510 TDA1047 tda2030 ic audio amplifier TDA1044 tda3530 TCA440 TCA660 BD876 7809A
Contextual Info: ELECTRONIC COMPONENTS DIGEST Integrated Circuits Discrete Semiconductors transistors thyristors diodes JSC C OMPE L Contents GLOSSARY . . . . . . . . . . . . . . . . . . . . . . . . 2 INTEGRATED CIRCUITS TV/Video ICs . . . . . . . . . . . . . . . . . . . . .