2N2484 RELIABILITY DATA Search Results

2N2484

Abstract: SOT-18 BP317 Transistor 2N2484
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2484 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 01 Philips Semiconductors Product specification NPN general purpose transistor

12W SOT23

Abstract: 2N2484 2N2484CSM 2n2484 reliability data 2N2484 SOT23
Contextual Info: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Contextual Info: SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

12w sot23

Abstract: transistor sot23 pf oa
Contextual Info: Illl = ^ = Illl SEME 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im e nsio ns in mm inches FEATURES 0.51 ±0.10 (0.02 ±0.004)

ic micro

Abstract: 2N2484 LDT2484 LDT2484T 2n2484 reliability data
Contextual Info: PRODUCT DATA Micro International, Inc PART NUMBER LDT2484 and LDT2484T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors

2N3810 LCC

Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Contextual Info: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

MCA0616/1

Abstract: T-120-01B Skynet Electronic
Contextual Info: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

CI TL074

Abstract: Instrumentation Amplifier circuit using tl084 KC182 CI TL084 amplifiers discontinued in 1996 TL054 Instrumentation Amplifier circuit with tl084 TL054ACD TL054ACN TL054AMD
Contextual Info: TL054, TL054A ENHANCED-JFET PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS038D – JUNE 1988 – REVISED AUGUST 1996 D D, J, OR N PACKAGE TOP VIEW Maximum Offset Voltage . . . 1.5 mV (TL054A) High Slew Rate . . . 15.9 V/µs Typ at 25°C Low Total Harmonic Distortion

Instrumentation Amplifier IC with tl084

Abstract: application of TL084 DIODE ON u1d ic TL074 jfet matching fixture matched pair JFET zener diode 15 v TL054 TL054A TL054ACD
Contextual Info: TL054, TL054A ENHANCED-JFET PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS038C – JUNE 1988 – REVISED AUGUST 1994 • D, J, OR N PACKAGE TOP VIEW Maximum Offset Voltage . . . 1.5 mV (TL054A) High Slew Rate . . . 15.9 V/µs Typ at 25°C Low Total Harmonic Distortion

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10

BC237

Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste

BC237

Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r

2N643

Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair

BC237

Abstract: MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

j305 replacement

Abstract: BC237 mps2907 replacement BC109C replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

MPN3404 equivalent

Abstract: transistor TO-92 bc108 BC237 bc140-10 to92 BC107B to92 2N2904 transistor TO92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Pin Diode MPN3404 This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a cost–effective TO–92 type plastic package for economical, high–volume consumer and industrial

2n3819 replacement

Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching