2N2369 DIE Search Results

2N2369

Abstract: 2N2369 datasheet 2N2368 2N3227 Am29BDD160GB-65ADPE1 2N2369A 2N4449 2n2369 die 2C2369A chip type geometry
Contextual Info: Data Sheet No. 2C2369A Generic Packaged Parts: Chip Type 2C2369A Geometry 0005 Polarity NPN 2N2368, 2N2369, 2N3227, 2N4449 Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high

2N702

Abstract: 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N743 2N914
Contextual Info: MOTOROLA I SC -CDIODES/OPTOJ- 6367255 MOTOROLA SC 34 D Ü j|fc .3 h 7 E 5 S D IO D E S /O P TO 34C □ U ^ Ï T r '5 37975 "I D T'35-J5 SILICO N SM A LL-SIG N A L TR A N SISTO R DICE (continued) 2C2369A DIE NO. — NPN LINE SOURCE — DMB103 This die provides performance similar to that of the following device types:

mosfet to ignition coil

Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
Contextual Info: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark of International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for

Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies

2N3866 application note

Abstract: 2N5160 2N2369 transistor pulse generator LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8
Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies

2N3866 application note

Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
Contextual Info: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies

Instruments

Abstract: AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos
Contextual Info: Application Note 13 April 1985 High Speed Comparator Techniques Jim Williams INTRODUCTION Comparators may be the most underrated and underutilized monolithic linear component. This is unfortunate because comparators are one of the most flexible and universally applicable components available. In large

AN72

Abstract: AN72F PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849
Contextual Info: Application Note 72 May 1998 A Seven-Nanosecond Comparator for Single Supply Operation Guidance for Putting Civilized Speed to Work Jim Williams INTRODUCTION In 1985 Linear Technology Corporation introduced the LT 1016 Comparator. This device was the first readily

ci sn7402

Abstract: voltage controlled pulse width generator 1HZ-10MHZ 74121 application as pulse generator LT1016 ultra fast comparator application note LT1016CN 50GHz mosfet LT1016MJ LT1016CJ
Contextual Info: _ LT1016 Ultra Fast Precision Comparator FCflTURCS DCSCRIPHOn • Ultra Fast 10ns typ ■ Operates Off Single +5V Supply, or ±5V ■ Complementary Output to TTL ■ Low Offset Voltage ■ No Minimum Input Slew Rate Requirement ■ No Power Supply Current Spiking

HP 2602

Abstract: LM11 op amp HP2602 HP-2602 2n22222 "Secret Life of Capacitors" LM11 OP KELVIN-VARLEY DIVIDER LM11 national INS8070
Contextual Info: National Semiconductor Application Note 260 January 1981 By combining an “inferior”, 20 year old A/D conversion technique with a microprocessor, a developmental A/D converter achieves 1 part-per-million 20-bit linearity. The absolute accuracy of the converter is primarily limited by the voltage

micronote 103

Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
Contextual Info: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to

LT1149

Abstract: 1676I MBR160 SMD SMD TRANSISTOR N8 DO3316-224 LT1676 LT1676C LT1676CN8 LT1676CS8 LT1676I
Contextual Info: Final Electrical Specifications LT1676 Wide Input Range, High Efficiency, Step-Down Switching Regulator September 1998 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ Wide Input Range: 7.4V to 60V 700mA Peak Switch Current Rating Adaptive Switch Drive Maintains Efficiency at High

Contextual Info: r r u n _LT1671 m TECHNOLOGY 60ns, Low Power, Single Supply, G round-Sensing C o m p a ra to r FCRTURCS DCSCRIPTIOn • Low Power: 450|uA ■ Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive ■ Low Offset Voltage: 0.8mV ■ Operates Off Single 5V or Dual ±5V Supplies

2N2369 SOT-23

Abstract: sot-23 Marking c0 MMBT2369LT1 M1JX
Contextual Info: MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 15 Vdc Collector −Emitter Voltage VCES 40 Vdc Collector −Base Voltage

Contextual Info: MSR2N2369AUB / UBC Screened Levels: MSR Rad Hard NPN Silicon High Speed Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 QPL RANGE and RAD LEVEL Radiation Level TID ELDRS MSR2N2369AUB 100 Krad 100 Krad DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to

2n2369 die

Abstract: Signal Path Designer
Contextual Info: Section 4 – Design Considerations Thermal Management Today’s system designer is faced with the problem of keeping ahead when addressing system performance and reliability. ON Semiconductor’s Advanced CMOS helps designers achieve these goals. FACT logic was designed to alleviate many of the

"tunnel diode" oscillator

Abstract: 74123 74123A 2N4393 74AS00 TTL AN13 application circuits of ic 74123 LT1016 precision Sine 1Mhz Wave Generator time delay circuit for ic 74123
Contextual Info: um Application Note 13 A pril 1985 TECHNOLOGY High Speed Com parator Techniques Jim Williams IN TR O D U C TIO N Comparators may be the most underrated and under­ utilized monolithic linear component. This is unfortunate because comparators are one of the most flexible and

TRANSISTOR B509

Contextual Info: r r u n w LT1016 i TECHNOLOGY Ultra Fast Precision C om parator F€ATUR€S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ The LT1016 is an ultra fast 10ns comparator specifi­ cally designed to interface directly to TTL logic while operating off either a dual ± 5V supply or a single + 5V

lt1149

Contextual Info: u r m TECHNOLOGY LT1676 W ide Input Range, High Efficiency, Step-Down Switching Regulator FEATURES DESCRIPTIOfl • Wide Input Range: 7.4V to 60V ■ 700mA Peak Switch Current Rating ■ Adaptive Switch Drive Maintains Efficiency at High Load Without Pulse Skipping at Light Load

KLI-5001

Abstract: KLI-5001G kodak ccd kli 2N2369 J511 JESD22 linear displacement sensor specification Contact Image Sensor
Contextual Info: KLI-5001G KLI-5001G 5000 Element Linear CCD Image Sensor Performance Specification Eastman Kodak Company Image Sensor Solutions Rochester, New York 14650-2010 Revision 8 May 21, 2002 Eastman Kodak Company - Image Sensor Solutions For the most current information regarding this product:

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

2m3906

Abstract: intel 8051 microcontroller hp2810 lt1094 ADC0820 application note LTC1095 AN6221 74hc164 HP2-810 YSI 44034
Contextual Info: Application Note 62 October 1994 Data Acquisition Circuit Collection Kevin R. Hoskins INTRODUCTION This application note features 8-, 10-, and 12-bit data acquisition components in various circuit configurations. The circuits include battery monitoring, temperature sensing, isolated serial interfaces, and microprocessor and

ci sn7402

Abstract: 10GHz OSCILLATOR pulse generator LT1017 failure rate LT1017 LM111 LT1011 Transistor 2N3866 1Hz-10MHz AM6012 LT1016CS8
Contextual Info: r r m r LT1011/LTlOl 1A n TECHNOLOGY Voltage Com parator FCftTURCS D6SCRIPTIOI1 • Pin-Compatible with LM111 Series Devices ■ Guaranteed Max. 0.5mV Input Offset Voltage ■ Guaranteed Max. 25nA Input Bias Current ■ Guaranteed Max. 3nA Input Offset Current

ta66

Abstract: uA733 an47fa Ferronics 21-110J 2n2369 avalanche lt1150 Tektronix P6056 linear technology an47 AN-4745 NE592
Contextual Info: Application Note 47 August 1991 High Speed Amplifier Techniques A Designer’s Companion for Wideband Circuitry Jim Williams PREFACE This publication represents the largest LTC commitment to an application note to date. No other application note absorbed as much effort, took so long or cost so much.