sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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2n2222 sot-23
Abstract: 2N2369 SOT-23 2N2907 SOT-23 bcy79 sot23 BC461 2N5322 bc107 sot23 SOT-23 2N2222 2N3700 sot23 2n2222a SOT223 So642
Contextual Info: TRANSISTORS SMALL SIGNAL TO-39 TO-18 SOT-223 SOT-23 NPN GENERAL PURPOSE TRANSISTORS - TO-18 hFE @ IC VCEO VCER* VCE sat @ IC / IB Type (V) min/max (mA) 55 50/– 50 30 40 80 80 100/300 100/300 40/– 100/300 150 150 150 150 max fT ts Ptot Also available min
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ot-223ot-23bsx332n2222+142n2222a2n720a2n3700stzta422n2222 sot-232n2369 sot-232n2907 sot-23bcy79 sot23bc461 2n5322bc107 sot23sot-23 2n22222n3700 sot232n2222a sot223so642
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BC461 2N5322
Abstract: S02907A S02222A S02222 2N2907 SOT-23 2N2369 BSX20 S02369A 2N2369 SOT-23 2n2907 SOT23 S0642
Contextual Info: TRANSISTORS /= T SCS-THOMSON ^ 7# SMALL SIGNAL M g K [IL l;(M E M D (§ I TO-18 TO-39 SOT-223 SOT-23 NPN GENERAL PURPOSE TRANSISTORS - TO-18 VCEO VCER* hFE @ IC VcE(sat @ IC / Iß Type (V) min/max (mA) 55 50/- 50 30 40 80 80 100/300 100/300 40/100/300
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t-223bsx332n22222n2222a+152n720a2n3700ot-223stzta42stzt5401bc461 2n5322s02907as02222as022222n2907 sot-232n2369 bsx20s02369a2n2369 sot-232n2907 sot23s0642
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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SO930
Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
Contextual Info: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot
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o-126/sot-32ot-223ot-232n2857+162n5179bfx89bfr99abfr99bfw16abfw17aso930so918bsx28bcw67b sot-223so5400low noise transistors vhfso6422n2222a sot223bcy70bfx40
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smd npn 2n2222
Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.
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2pc1815l2pc181510xx07z88986+10smd npn 2n2222bf471bsr62 equivalentequivalent transistor bc549ctransistor bf 175transistor bc547 ph in metal detectortunnel diodebsy95abf470bc200
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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mmbfj177lt1236abmsc1621t1msc2404+6msd1819amv1620mv1624mv1636mv1640bc237
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BC237
Abstract: MPSA06 346
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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mmbd1000lt1mmbd2000t1mmbd3000t1mmsd1000t1+7ot-23o-236abv218amsc1621t1msc2404bc237mpsa06 346
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BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3455xt1t218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code diode sod123 w1k 2056 transistor
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2N16
Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf1p02elt1l218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv16422n16bc237bcy72
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2n2222 h 331 transistors
Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
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mgsf3442xt1t218amsc1621t1msc2404+12msd1819amv1620mv1624mv1636mv1640mv16422n2222 h 331 transistors2n2222 -331 transistors2n2222 331 transistorsbc2372n2222 h 331marking code diode sod123 w1
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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mmbfj175lt1236abga218amsc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1010lt1mmbd2010t1mmbd3010t1s218a+9msc1621t1msc2404msd1819amv1620mv16242n643bc237marking dp sot-363do204aa
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BC237
Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1005lt1mmbd2005t1mmbd3005t1msc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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MPS5771
Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage
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mps3640226aau218amsc1621t1+16msc2404msd1819amv1620mv1624mv1636mv1640mps5771mps8093bf3912n3819 replacementmps3640 equivalentmpf3821mps6595mad130pbc108 characteristic2n3819 equivalent ic
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BC237
Abstract: TRANSISTOR bc177b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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baw156lt1baw156lt3inch/10236ab+7junc218amsc1621t1msc2404msd1819amv1620bc237transistor bc177b
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MPS6520 equivalent
Abstract: BC237 transistor Vbe 2n2222 Characteristic curve BC107
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Current Transistors MPSW01 MPSW01A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage MPSW01 MPSW01A VCEO Collector – Base Voltage
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mpsw01mpsw01a226aejunc218a+6msc1621t1msc2404mps6520 equivalentbc237transistor vbe 2n2222characteristic curve bc107
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor MPSH17 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15
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mpsh17226aamsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE
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mgsf1n03lt1sur218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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MPS2369 equivalent
Abstract: BC237 2N5551 circuit 2N2369A MOTOROLA t1 bc140 BS107 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors MPS2369 MPS2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15 Vdc Collector – Emitter Voltage
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mps2369mps2369a226aamsc1621t1+12msc2404msd1819amv1620mv1624mv1636mv1640mps2369 equivalentbc2372n5551 circuit2n2369a motorolat1 bc140bs107 "direct replacement
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motorola p1f
Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for
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ot-223pzt2907at1pzt2222at1inch/1000+12pzt2222at3inch/4000unit218amsc1621t1motorola p1fhie for bc547bbc237transistor motorola 2n3053marking p1f619 sc-59p1f markingmarking code zi sot363
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2N5640 equivalent
Abstract: BC547 collector characteristic curve BF245 application note motorola JFET 2N3819 BC237 2N2904 2N6431
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N–Channel — Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol Value Unit VDS 30 Vdc Drain–Source Voltage Drain–Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C
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2n5640226aagate218amsc1621t1+13msc2404msd1819amv1620mv1624mv1636mv16402n5640 equivalentbc547 collector characteristic curvebf245 application notemotorola jfet 2n3819bc2372n29042n6431
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BC237
Abstract: marking CODE N3 SOT223 marking N3
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1N03LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits. N–CHANNEL ENHANCEMENT–MODE
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mgsf1n03lt1sur218amsc1621t1msc2404+9msd1819amv1620mv1624mv1636mv1640mv1642bc237marking code n3 sot223marking n3
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MV104 "direct replacement"
Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.
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mv104226aacurren218amsc1621t1+12msc2404msd1819amv1620mv1624mv1636mv104 "direct replacement2n3819 application notebf245 application notek 2056 transistormv104 equivalentbc237bss89 application
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