2N RF TRANSISTOR Search Results

rf power transistors

Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
Contextual Info: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60

BFY33

Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.

3733

Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090

BFY 34 transistor

Abstract: transistor BFY46 BFY 39 transistor BFY46 BFY34 BFY33 BFV33 BFY 33 transistor N1613 01BV
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new development NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

BFY34

Abstract: BFY 34 transistor transistor BFY46 BFY46 BFY33 Q60206-Y46 1613B
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new development NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are double-diffused planar NPN silicon R F-transistors in a case 5 C 3 DIN 41873 (TO-39). The collector is electrically connected to thecase.

BFY34

Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

2n3553

Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
Contextual Info: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in

2N3553 equivalent

Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz

transistor RCA 274

Abstract: rca 628 2N6393 2N6392 TA8751 ta8746 RCA2010 HF-46 TA8752 rca transistor
Contextual Info: File No. 628 RF Power T ran sisto rs Solid State Division RCA2010 2N 6392 2N 6393 10-W, 2-GHz, Emitter-Ballasted Silicon N-P-N Overlay Transistors For Use in M icro w ave Pow er A m p lifie rs , F u n d am e n ta l-F re q u en cy O scillators, and Freq u en cy M u ltip liers

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 979 378-2022 (212)227FAX: (879) 3784880 2N 6083 NPN SILICON RF POWER TRANSISTORS •MAXIMUM RATINGS . . . designed (or 12.5 Voll VHP large-signal power amplifier applications required in military and industrial equipment operating to

bsy62

Abstract: BSY18 transistor w1w 2N708 2N743 KC-C10 BSY17 BSY62A Transistor 2N708 Q60218-Y17
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, BSY 62 and BSY 63 are double-diffused epitaxial NPN silicon planar RF transistors in a case 1 8A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor BSY 17 corresponds to type 2N 743,

2N6390

Abstract: microstripline RCA2003
Contextual Info: File No. 626 RF P o w e r T ra n s is to rs Solid State Division RCA2003 2N 6390 2.5- and 3-W, 2-G Hz, Emitter-Ballasted Silicon N-P-N Overlay Transistors For Use in Microwave Power Am plifiers, Fundam ental-Frequency Oscillators, and Frequency Multipliers

BSY17

Abstract: BSY18 transistor w1w 2N708 BSY62 2N743 BSY62A BSY62B Q60218-Y17 Q60218-Y18
Contextual Info: B S Y 17, B S Y 18, BSY 62, BSY 63 NPN RF Transistors for switching applications BSY 17, BSY 18, B SY 62 and B S Y 63 are double-diffused epitaxial N PN silicon planar RF transistors in a case 1 8 A 3 DIN 41876 TO-18 . Their collectors are elec­ trically connected to their cases. Transistor B S Y 17 corresponds to type 2N 7 4 3 ,

2N 2857

Abstract: 2N918 2N3600 RF-IF
Contextual Info: JEDEC TRANSISTORS continued c E h *— LiCS. X<a E o n o G "a X co e Uz uo m CM II«j h- @ PACKAGE Nl X 5 f (MHz) a. :> UJ u :> a UJ 1< cc f (MHz) > K cc < —i o PG min (dB) TYPE RF-IF amplifiers/oscillators S _§ Û Q. 2N 707 NPN 25 — 5 6 100 — —

transistor rc 3866

Abstract: transistor 3866 s rc 3866 t 3866 power transistor t 3866 transistor 3866 transistor transistor t 3866 c 3866 transistor transistor 3866 mps1983
Contextual Info: MPS1983 See MPS901 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS3866 D ie S o u rc e S a m e as 2N 3866 The RF Line 1C = 400 m A M A X IM U M RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage

2N6618

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 2N 6618 NPN Silicon High Frequency Transistor . . . designed fo r use in hig h -fre q ue n cy, low *no ise , sm a ll-sign a l, n a rro w and w id e b a n d a m plifiers. Ideal fo r use in m ic ro s trip th in and th ick film app licatio n s.

common emitter amplifier

Abstract: IG-001
Contextual Info: NPN SILICON RF S M A L L -S IG A L TRANSISTOR MECHANICAL OÖTLIHS gbmbral descriptio n 2N 5179 i s designed f o r use in high g a in , low-noise am p lifier , o s c illa t o r and mixer c i r c u i t s . I t i s a ls o s u ita b le fo r UHF converter a p p lic a tio n s. I t fe a tu re s

Contextual Info: NPN SILICON RF S M A L L -S IG A L TRANSISTOR g bm bral d e s c r ip t io n 2N 5179 is designed fo r use in hig h g a in , low -noise a m p lifie r , o s c illa t o r and m ixer c ir c u it s . I t is a ls o s u ita b le fo r DHF co n verter a p p lic a tio n s . I t fe a tu re s

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

High frequency transistors

Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes

2N2708

Abstract: Ferranti ZT84 ferranti 2N2907a 2N3571 2N3571 NPN BFY90 T018 ZT189 ZT211 ZT86
Contextual Info: NPN LOW NOISE TABLE 5 NPN SILICON PLANAR LOW NOISETRANSISTORS The transistors shown in this table are characterised for lo w noise, low level am plification and are particularly suitable for audio pre-am plifiers as well as universal applications. The devices are listed in order of decreasing Breakdown Voltage V c e o / decreasing Collector

2N5945

Abstract: 2N5946 MOTOROLA 2N5946 2N5945 Motorola
Contextual Info: T -33-Æ f MOTOROLA SC X S T R S / R F 4bE D b3b7254 0 0 T m i 2 4 • flôTb MOTOROLA ■ SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The RF Line 2 .0 ,4 .0 ,1 0 W - 470 MHz RFPOWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 7.0 to 15 Volts, U H F large signal amplifier applica*

sd 4093

Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
Contextual Info: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A

2N5707

Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041
Contextual Info: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C