2N RF TRANSISTOR Search Results

3733

Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090

2N6390

Abstract: microstripline RCA2003
Contextual Info: File No. 626 RF P o w e r T ra n s is to rs Solid State Division RCA2003 2N 6390 2.5- and 3-W, 2-G Hz, Emitter-Ballasted Silicon N-P-N Overlay Transistors For Use in Microwave Power Am plifiers, Fundam ental-Frequency Oscillators, and Frequency Multipliers

High frequency transistors

Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Contextual Info: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes

2N5707

Abstract: TO128 PACKAGE 2n RF transistor 2N4127 transistor d 5702 Heat Sink to-39 2n4440 2N5687 TO-128 2n4041
Contextual Info: 2N5707 SILICON NPN VH F POWER TRANSISTOR Emitter Isolated from Case Intermodulation Distortion Better Than 30 dB at 25 W P.E.P. Emitter Resistor Stabilised for Class AB S.S.B. Applications mechanical specification TO -128 absolute maximum ratings Tease = 25 °C

2N4959 MOTOROLA

Abstract: 2N4957 2N4957 MOTOROLA transistor on 4959 2n4959
Contextual Info: MOTOROLA SC XSTRS/R F MOTOROLA b3b72S 4 OQTMOM'i _ T = *3 H • SEMICONDUCTOR ■ ■ 1 «MOTb 5 2N4957 2N4958 2N4959 TECHNICAL DATA The R F Line | Iß = -3 0 mA HIGH FREQUENCY TRANSISTORS PNP SILICON HIGH FREQUENCY TRANSISTORS . . . d e s ig n e d fo r h ig h -g a in , lo w -n o is e a m p lifie r, o sc illato r and

TRANSISTOR BC 545

Abstract: NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643
Contextual Info: MM m tm F?F- Products m M ic m s e m i 140 Commerce Drive Montgomery ville, PÂ 18936' Tel: ,215 631-9840 2N5641 2N5642/2N5643 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS 175MHz • FREQUENCY ■ VOLTAGE 28V TO 40 W • HIGH POWER OUT . HIGH POWER GA!N

t 3866 power transistor

Abstract: t 3866 t 3866 transistor 3866 transistor transistor t 3866 C 3866 3866 power transistor TRANSISTOR BFR97 c 3866 transistor Transistor BFR 97
Contextual Info: 2N 3866 M ULTI-EM ITTER SILICON PLANAR NPN 97 V H F -U H F O S C ILL A T O R POWER A M P L IF IE R The 2N 3866/B F R 97 is a silicon planar epitaxial NPN transistor in Jedec T O -3 9 metal case. It is designed fo r V H F -U H F class A , B, or C am plifier circuits and oscillator applications.

2N5590

Abstract: 2n5591 2N559 2N5589 SD1216 transistor 2N5589 SD1214 2n558 2N556 M135
Contextual Info: Microsemi P rog resa P o w e re d b y T ech no log y Montgomeryville, PA 18936 Tel: 215 631-9840 2N5589 2N5590/2N5591 RF & MICROWAVE TRANSISTORS 130.230MHZ FM MOBILE APPLICATIONS FREQUENCY 175MHz VOLTAGE 13.6 V POWER OUT 8 TO 25W HIGH POWER GAIN HIGH EFFICIENCY

2N5946

Abstract: 3 w RF POWER TRANSISTOR NPN M122 2n59
Contextual Info: m m mI RF^P RF Products m duçts — - *m Microsemi P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 18936-1013 Tel: 215 631-9840 o M C ftyie ¿ N 0 y 4 b RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS

2S92

Abstract: KC510 2S146 transistor 2N219 2N219 2S125 ge 142 2N218 2NJ8 HJ23D
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TO111 package

Abstract: 2N278 2N2879 2N2880 2N2877 TWX910-950-1942 2N2878
Contextual Info: 3918590 GENERAL 95D SEM ICON DUCTOR General Sf* Sem iconductor ^ « Industries, Inc. 02100 2N 2877 2N 2878 2N 2879 2N 2880 T -3*- SQ U H R E TÌ COMPANY DIFFUSED SILICON EPITAXIAL PASSIVATED TRANSISTOR NPN SILICON HIGH-POWER TRANSISTORS T h e » devices are designed for use In power amplifiers and switching applications,

Microt

Abstract: micro-T Package MMCM2222 MMCM2369 MMCM2907 MMCM3904 MMCM918 MMT2222 MMT2369 MMT2907
Contextual Info: Micro-T Transistors Micro-T devices combine high performance with extremely small physical size. The devices shown in these tables are available from stock; all other Motorola small-signal transistors may be obtained in Micro-T packages on special order. GENERAL-PURPOSE AND SWITCHING TRANSISTORS

TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn 2N5090 E200C LC 7621 fh15
Contextual Info: 2 N 5090 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL UHF-VHF amplifier, frequency multiplier or oscillator Amplificateur, multiplicateur de fréquenceou oscillateur VHF-UHF v CEO 30 V 'c 0,4 A ^ 2 1 E ^ mA 10 - 200

T4 3570

Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Transistor BFR 96

Abstract: 2SC 930 AF transistor 2Sc 2053 Transistor BFR34a Transistor BFr 99 BFR34A
Contextual Info: SS C D • fl235bD S QQQMb70 ÍS I E û 2 BFR34A 2 N 6620 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ -/s' SIEMENS A K T I E N 6 E S E LLS CH AF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar

Contextual Info: MITSUBISHI RF POWER MODULE M67717 8 7 2 9 0 5 M H z , 3 W , FM FOR M O B ILE RADIO A P P LIC A TIO N DESCRIPTION M 67717 is a th ick film RF po w er m odule sp ecifically OUTLINE DRAWING Dimensions in mm designed fo r 8 7 2 ~ 9 0 5 M H z , 3W F M m obile radios.

2N6084

Abstract: 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6
Contextual Info: II j - t m IW iiC tT JS & rrtM « V l l W W ^ i l f l 140 Commerce Drive Montgomeryvìlle, PA 18936-1013 Tel: 215 631-9840 . 2 N6 080 2 N6084 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FREGLENCY 175MHz VOLTAGE 12,5V : POWER OUT 4 40W

Contextual Info: Ordering number : ENA0673 Monolithic Digital IC LB11851M Microprocessor Fan Motor Interface Driver Overview The LB11851M provides an interface between a microcontroller motor control signal and external MOS transistors. This device can implement a microprocessor fan driver with a minimal number of external components. The LB11851M is

Transistor BFR 97

Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

SMD Transistor msb

Abstract: TCXO KSS 6 pin TRANSISTOR SMD CODE XI DJ speaker system circuit diagram M64886 kss japan tcxo pin configuration 1K variable resistor str 1195 variable resistor 10k connection LQFP80-P-1212-0
Contextual Info: M64886FP RF Transceiver for Short-range Wireless REJ03F0087-0100Z Rev.1.0 Sep.22.2003 Description The M64886FP is a semiconductor integrated circuit designed for RF / IF / AF transceiver function with Dual PLL synthesizer for double conversion system cordless phone which used by 2.4 GHz and 900MHz ISM band of North

schematic diagram online UPS

Abstract: VHDCI Connector 303003 "single shot" digitizer 3030c 3035C CONNECTOR smb 2319E
Contextual Info: 3030A, 3030C, 3035, 3035C 3030 Series Wideband RF Digitizer PXI Modules User Manual Document no. 46892/836 Issue 3 23 November 2009 PREFACE About this manual This manual explains how to set up and configure an Aeroflex 3030A, 3030C, 3035 or 3035C wideband RF digitizer PXI module. Where necessary, it refers you to the appropriate

marking BSs sot23

Abstract: 82c80 marking code bss sot TL1040 marking BSs sot23 siemens
Contextual Info: SIEMENS PNP Silicon Switching Transistors BSS 80 BSS 82 • High DC current gain • Low coltector-emitter saturation voltage • Complementary types: BSS 79, BSS 81 NPN Type BSS BSS BSS BSS 80 80 82 82 B C B C Marking Ordering Code (tape and reel) PinC onfiguration

G303

Abstract: 2N6767
Contextual Info: HE 0 I 4055452 000*1321, 5 | IN TERNATIONAL Data Sheet No. PD-9.339D RECTIFIER INTERNATIONAL RECTIFIER IOR T -39-13 HEXFETTRANSISTORS *«JAI\ITXV2I\I6768 *JANTXSN6768 JEDEC REGISTERED IM-CHANIMEL G POWER MOSFETs SN6768 SN6767 ‘ QUALIFIED TO MIL-S-19500/543