2N 2219 Search Results

2N 2222 A NPN, TO-18

Abstract: 2N2222 2n h 2222a 2222a NPN 706a 709a 2N708 2N709 2N753 2222 NPN
Contextual Info: à a.UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A

TT 2222 npn

Abstract: 709a 2N709 2n h 2222a 2N698 2N708 2N753 2222 NPN
Contextual Info: à Si a. UJ >° 0Hi >U aLU £ oc 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904

2222 NPN

Abstract: 2222a NPN 2n h 2222a 2222a 2221A npn 2907A 2N708 2N709 2N753 2369A
Contextual Info: JEDEC TRANSISTORS 2N 706 2N 706A 2N708 2N709 2N 709A 2N 722 2N 743 2N 744 2N753 2N 834 2N 834A 2N 869A 2N 914 2N 995 2N 2205 2N 2218 2N 2218A 2N 2219 2N 2219A 2N 2221 2N 2221A 2N 2222 2N 2222A 2N 2368 2N 2369 2N 2369A 2N 2475 2N 2894 2N 2904 2N 2904A 2N 2905

2N2222Metal

Abstract: 2N2222 2n2221 br 2222 npn 222-1 2n 2222 -31 2221 2N 2222 2221-2N npn 2222
Contextual Info: 2N 2221 2N 2222 SILICON PLANAR NPN HIGH-SPEED SWITCHES The 2N 2218, 2N 2219, 2N 2221 and 2N 2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N 2218 and 2N 2219 and in Jedec TO-18 (for 2N 2221 and 2N 2222) metal cases. They are designed for high-speed switching applications at collector currents up

2222A

Abstract: 2n h 2222a 2221A 2219a 2222a NPN 2n2222a 2N2219A 2N2218A 2222A transistors
Contextual Info: 2N 2218 A 2N 2219 A 2N 2221A SILICON PLANAR NPN • “ *» HIGH-SPEED SWITCHES The 2N 2218A, 2N-2219A, 2N 2221 A and 2N 2222A are silicon planar epitaxial NPN tran­ sistors in Jedec TO-39 for 2N 2218A and 2N 2219A and in Jedec T O -18 (for 2N 2221A and 2N 2222A) metal cases. They are designed fo r high-speed switching applications at col­

2222a

Abstract: 2n h 2222a 2218A 2219a z222a tr 2222a tr 2219a 2N2218A 2N2219A 2n 2222a
Contextual Info: 2N 2218 A 2N 2219 A SILICON PLANAR NPN • HIGH-SPEED SWITCHES The 2N 2218A, 2N 2219A, 2N 2 2 21A and 2N 22 22A are silicon planar epitaxial NPN tran­ sistors in Jedec TO-39 for 2N 22 18 A and 2N 2219A and in Jedec T O -1 8 (fo r 2N 2221A and 2N 2222A) metal cases. They are designed fo r high-speed switching applications at col­

2m2222

Abstract: 2N2222 2N2222Metal 2N2221 2221 2N 2222 2221-2N 222-1 2N2218 br 2222 npn
Contextual Info: 2N 2218 2N 2219 2N 2221 SILICON PLANAR NPN • 2222 H IG H - S P E E D S W IT C H E S The 2N 2 2 1 8 , 2N Jedec T O -3 9 fo r m etal cases. T he y to 5 0 0 m A , and 2 2 1 9 , 2N 2221 and 2N 2 2 2 2 are silico n p lanar e p ita xia l NPN transistors in 2 N 2 2 1 8 and 2N 2 2 1 9 and in Jedec T C I-1 8 ( fo r 2N 2221 and 2N 2222)

2n h 2222

Contextual Info: 3QE D • 7^237 0031113 T ■ S C S -T H O M S O N UOTM W i ^T-3>S-f3 2N 2218-2N 2219 2N 2221-2N 2222 S G S-TH0MS0N HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are si­ licon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218 and 2N2219 and in Jedec

Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 T O -5 TO 205A D t ri T O -3 9 20 @ W ^C m in /m a x D E V IC E su s Ic (m a x ) TYPE VOLTS AM PS @ m A /V 2N 697 40h 0 .8 4 1 0 /1 2 0 @ 150/10 2N 1711 50h 1.0 2N 1613 50h 2N 1893

2n h 2222a

Abstract: 2N2218 2222a 2N5581 ip 2222A
Contextual Info: MAXIM UM RATINGS 2N 2218A 2N 2219 Symbol 2 N 22 2 2 2N 2219A 2N 2222A Unit C o lle c to r -E m itte r V o lta g e v CEO 30 40 Vdc C o lle c to r-B a s e V o lta g e v CBO 60 75 V dc E m itte r-B a s e V o lta g e v EBO 5.0 6.0 V dc m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

2N 2905a pnp transistor

Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
Contextual Info: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO

fairchild 2N2222A

Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
Contextual Info: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min

6 volt npn

Abstract: DP2907A transistor 60 volt npn transistor 60 volt DN2219A geometry 450
Contextual Info: T R A N S IS T O R C H IP S 1 M E D IU M C U R R E N T PNP 100% Probe Tested to These Parameters @ 25°C MIN 35 MIN 40120 60 30 5 2N 2218A/21A 25 MIN 35 MIN 40120 70 40 6 2N2219/22 50 MIN 75 MIN 100300 60 30 5 2N 2219A/22A 50 MIN 75 MIN 100300 70 40 6 75 100

germanium transistor

Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
Contextual Info: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

s parameters of 2N2222

Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
Contextual Info: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c

Contextual Info: D at a S he e t No. 2 N 2 2 1 9 A L C=L SEMICONDUCTORS Type 2N2219AL G e n e ric P a rt N u m b e r: 2N 2219A Geometry 0400 P olarity NPN Q ual Level: J A N -J A N S REF: MIL-PRF-19500/251 Features: • General-purpose transistor for switching and amplifier applicatons.

2N3019A

Abstract: 2N3114 2N5682 2N1613A 2N3501 JANTX transistor 2N3725 2N2219 JANTX 2N2219A 2N3020 transistor 2n2270
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 TO-5 T0205A D hr iff ill Ic m ax A M PS 2N697 40h 0.8 40/120@ 150/10 2N1711 50h 1.0 2N 1613A 50h 2N1893 D E V IC E TY PE !/ ^ C E (sa t) @ If/Iß V @ m A/mA C<P P fx (M H z) 1.5@150/15

BD373

Abstract: 2n 2222A 3904 NSDU55 National Semiconductor Discrete devices catalog ITT+Semiconductors+saj+300+t BC560 NSDU05
Contextual Info: v CE0 iMt (V e its ) M in too D e vice s KPN 2N 6730 * M « •M M M c (M H t) : .; mA 5 — PD (Amb) (m W ) 925°C 1000 80 250 50 75 100 T 0 -2 0 2 (5 5 ) 1333 1000 50 250 250 50 200 T O -237(91) 850 250 50 200 T 0 -2 0 2 (5 5 ) 2000 150 100 50 TO -39 800

2N2219

Abstract: 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A
Contextual Info: NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2 N T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X 2 2 1 9 ’A Compì, of 2N 2904, A - 2905, A Preferred device D isp o sitif recommandé - LF or HF small or large signal amplification A m p lific a tio n B F o u H F p e tits ou grands signaux

2N2219 transistor

Abstract: Transistor 2N2219A 2n2219 2N221 2N2219A Silicon Epitaxial Planar Transistor philips 1N916 9L9V 2N2219/BC547 hie hre hfe
Contextual Info: 11 N AUER PHILIPS/DISCRETE blE D • h t,S 3 1 3 1 > DDEÖDBl 34T ■ APX A ZN’^ y 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -39 m etal envelope w ith th e c o lle c to r connected t o th e case. T he y are p rim a r­ ily intended fo r high speed switching. The 2N 2 2 1 9 is also suitable f o r d.c. and v .h .f./u .h .f. am plifiers.

N2219

Abstract: 2N2219 F133 2N2218 2N2218A Q62702-F109 Q62702-F133 Q62702-F59 Q62702-S29 siemens 2218
Contextual Info: 2SC D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 - SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2218,2 N 2219,2 N 2218 A, and 2 N 2219 Aare epitaxial NPN silicon Planartransistors

Contextual Info: 25C D • öBBSbQS GQGMßflQ 2 H S I E G - 7 ^ -3 5 '-/^ NPN Silicon Planar Transistors 2 N 2218 2 N 2219 -SIEMENS AKTIENGESELLSCHAF- 2 N 2218 A 2 IM2219 A 2 N 2 2 1 8 ,2 N 2 2 1 9 ,2 N 2 2 1 8 A, and 2 N 2 2 1 9 A a re epitaxial NPN silicon Planartransistors