2MX4 Search Results

EM488M1644VTD-7F

Abstract: EM488M1644VTD
Contextual Info: _ EM488M1644VTD 128Mb 2Mx4Bankx16 Synchronous DRAM Feature Description • Fully synchronous to positive clock edge The EM488M1644VTD is Synchronous • Single 3.3V +/- 0.3V power supply Dynamic Random Access Memory (SDRAM)

2MX40

Abstract: 402006EQS1G07TH DS842 8 pin
Contextual Info: 2M x 40 Bit 3.3V EDO DIMM Extended Data Out EDO DRAM DIMM 402006EQS1G07TH 100 Pin 2Mx40 EDO DIMM Unbuffered, 1k Refresh, 3.3V Pin Assignment Pin# Pin# 1 Vcc 51 2 DQ0 52 3 DQ1 53 4 DQ2 54 5 DQ3 55 6 Vcc 56 7 DQ4 57 8 DQ5 58 9 DQ6 59 10 DQ7 60 11 CAS0* 61

EM488M1644VTC

Contextual Info: _ EM488M1644VTC 128Mb 2Mx4Bankx16 Synchronous DRAM Feature Description • Fully synchronous to positive clock edge The EM488M1644VTC is Synchronous • Single 3.3V +/- 0.3V power supply Dynamic Random Access Memory (SDRAM)

EM488M1644VTB

Contextual Info: _ EM488M1644VTB 128Mb 2Mx4Bankx16 Synchronous DRAM Feature Description • Fully synchronous to positive clock edge The EM488M1644VTB is Synchronous • Single 3.3V +/- 0.3V power supply Dynamic Random Access Memory (SDRAM)

Contextual Info: SAMSUNG EL ECTRONICS INC b?E D • 7^4142 KMM5402000BM 0 0 1 5 1 ^ 4 26b ■ SH6 K DRAM MODULES 2Mx40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5402000BM is a 2M bitsx40 Dynamic RAM high density memory module. The Samsung

72402ASEM4G19T

Contextual Info: 4M x 72 Bit PC-66 SDRAM DIMM PC-66 SYNCHRONOUS DRAM DIMM 72402ASEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72402ASEM4G19T is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 2Mx4x2

s8050 d 128

Abstract: AML7218 ET4334 as1117 L 33 as1117-33 CN601 1117-3.3v m1d 95 s8050 d 33 AS1117
Contextual Info: 5 4 3 Y/Pb/Pr D 2CH 2 1 AUDIO D 5v POWER R L 4558 ET4334 5V_IN C IIS C SDRAM - 2Mx4x16 128MB 6ns /1Mx4x16(64M) 5v LDO AS1117-3.3 LDO AS1117 3.3V AML7218 1.2V CF CARD B B SDRAM - 2Mx4x16 (128MB) 6ns /1Mx4x16(64M) 4IN1 CARD 16Mb FLASH ONE OTG ONE HOST A A

44C10

Contextual Info: DRAM MODULE_ / 8 Mega Byte KMM5402000C/CG/CM Fast Pag/Mode 2Mx40 DRAM SIMM, 5V / GENERAL DESCRIPTION FEATURES The Samsung KMM5402000C is a 2M bit x 40 Dynamic RAM high density memory module. The Samsung KMM5402000C consists of twenty CMOS • Performance Range:

diode db3 c248

Abstract: CPPLC7LTBR EPM3128ATC100-10 IC LM317 8pin siemens ferrite n22 p14 zener DB3 C209 K4S643232-TC60 MURATA BLM18ag121 HALO N5 C242-C244
Contextual Info: Freescale Semiconductor, Inc. User’s Manual Freescale Semiconductor, Inc. MPC852TADSRM/D Version 1.0 June 1, 2003 MPC852TADS User’s Manual Motorola, Inc., 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc.

HB56D836SBT-AC

Abstract: power bank 5v 4Mx1 514400C m514400c 473e HM514400BS BLS B56A HM5116400ATS 5117800B
Contextual Info: 72-pin DRAM SIPs *32 »36 Org. Part Number Speeds ns Voltage Refresh Cycle Refresh Period Refresh Modes Power Version Number of Banks Component Base 1Mx32 HB56 A132BV/BU-B/BL HB56A132SBV-B/BL HB56A132BV/BU-C/CL HB56A132SBV-C/CL 60, 70, 80 5V 1K 16 ms 128 ms

EM488M3244LBB

Abstract: EM488M3244LBB-75F EM488M3244LBB-75FE
Contextual Info: eorex Preliminary EM488M3244LBB 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power Supply • LVCMOS Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8

EM488M1644VTB

Abstract: EM488M1644VTB-6F EM488M1644VTB-75F EM488M1644VTB-7F
Contextual Info: eorex EM488M1644VTB 128Mb 2Mx4Bank×16 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8

EM488M1644VTC

Abstract: EM488M1644VTC-75F EM488M1644VTC-7F
Contextual Info: eorex EM488M1644VTC 128Mb 2Mx4Bank×16 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8

EM488M1644LBB

Abstract: EM488M1644LB EM488M1644LBB-75F EM488M1644LBB-75FE
Contextual Info: eorex Preliminary EM488M1644LBB 128Mb 2Mx4Bank×16 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 1.8V ±0.1V Power Supply • LVCMOS Compatible with Multiplexed Address •Programmable Burst Length –1/2/4/8/ full Page

GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Contextual Info: MEMORY LINE-UP l.D R A M I IM H — I IMxl |- h GM71C1000B-60 ZZH H I GM71C 1OO0BJ-60 GM71C 1000BZ-60 UH GM71C 100OBL-6O I GM71C 1000BLJ-60 GM71C1000BLZ-60 — I 256Kx4 [~ H GM71C4256B-60 H GM71C4236BJ-60 I GM7IC42Î6BL-60 GM71C4256BU-60 GM 71C4256BLZ-60 I

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

EM488M1644VTE

Abstract: EM488M1644VTE-6F EM488M1644VTE-7F EM488M1644VTE-7FE EM488M1644
Contextual Info: eorex EM488M1644VTE Revision History Revision 0.1 Dec. 2007 - First release. Revision 0.2 (Apr. 2008). - modify improved ICCs Revision 0.3 (Nov. 2008). - modify AC characteristics improved tIH tRAS Nov. 2008 www.eorex.com 1/18 eorex EM488M1644VTE 128Mb (2Mx4Bank×16) Synchronous DRAM

HY57V164010C-10

Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
Contextual Info: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of

hy57v16

Abstract: HY57V164010D-10
Contextual Info: HY57V164010D 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of

EM488M3244VBA

Abstract: EM488M3244VBA-75F
Contextual Info: eorex EM488M3244VBA 256Mb 2Mx4Bank×32 Synchronous DRAM Features Description • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVTTL Compatible with Multiplexed Address • Programmable Burst Length (B/L) - 1, 2, 4, 8

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.

Contextual Info: eorex EM488M3244VBC Revision History Revision 0.1 May. 2007 - First release(Preliminary) Revision 0.2 (Apr. 2008). Update ICC spec: . Revision 0.3 (Jun. 2008). Update 1. ICC spec: (PAGE 7) - ICC1 110 mA. . - ICC2P 2 mA. - ICC2PS 2 mA. - ICC2N 40 mA.

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

1Mx9 DRAM 30-pin SIMM

Abstract: KMM594000C 30 pin simm 8mx32 simm 72 pin 4Mx9 DRAM 30-pin SIMM 4MX39 1mx33 4m dram 72-pin simm 32 DRAM 30-pin SIMM
Contextual Info: 2. Product Guide Org. Part No. Feature Speed ns Package PCB Height Refresh cycle/ms C/S 650 1024/16 NOW DRAM SIMM Based on 4M DRAM 1Mx8 KMM581000CN 1Mx9 4Mx8 4Mx9 F/P 60/70/80 S, 30 Pin SIMM KMM591000CN F/P 60/70/80 S, 30 Pin SIMM 650 1024/16 NOW KMM584000C