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    upd4516421 Datasheets

    upd4516421 datasheet (9)

    Part ECAD Model Manufacturer Description Type PDF
    uPD4516421 NEC Semiconductor Selection Guide 1995 Original PDF
    uPD4516421AG5-A10-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A10B-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A10BL-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A10L-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A12-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A12L-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A80-9NF NEC 16M-bit Synchronous DRAM Original PDF
    uPD4516421AG5-A80L-9NF NEC 16M-bit Synchronous DRAM Original PDF
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    1997 - wp1a

    Abstract: IC-3394 4516161 UPD4516421G5-A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF
    Text: ) µPD4516421G5-A10-7JF µPD4516421G5-A12-7JF µPD4516821G5-A10-7JF µPD4516821G5-A12-7JF µPD4516161G5-A10 , , 4516821, 4516161 Pin Configurations [ µPD4516421 ] 44-pin Plastic TSOP(II) (400 mil) µPD4516421G5-7JF , DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421 , 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421 , 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access , , 1995 µPD4516421 , 4516821, 4516161 Ordering Information Organization (word × bit × bank) 2M×4×2


    Original     		PDF PD4516421, 16M-bit 216-bit 44-pin 50-pin wp1a IC-3394 4516161 UPD4516421G5-A12-7JF BD3/1/TX13/7.9/PP10/UPD4516421G5-A12-7JF

    1995 - BA1T12

    Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
    Text: (word × bit × bank) 2M×4×2 MHz (MAX.) 100 44-pin Plastic TSOP(II) µPD4516421G5-A12-7JF 83 (400mil) µPD4516421G5-A13-7JF 77 µPD4516421G5-A15-7JF 66 Part number µPD4516421G5-A10-7JF , PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421 , 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421 , 4516821, 4516161 are high-speed 16,777,216-bit synchronous , µPD4516421 , 4516821, 4516161 (PRELIMINARY) µPD4516421 , 4516821, 4516161 [MEMO] No part of this


    Original     		PDF PD4516421, 16M-bit 216-bit 44-pin 50-pin BA1T12 BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5

    d4516161

    Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421 , uPD4516821, uPD4516161 16M , uPD4516421 , uPD4516821, uPD4516161 Clock Suspention during Burst Read (using CKE Function) . 848 Clock , command (CS. RAS, CAS, WE = Low) UPD4516421 , 4516821, 4516161 CLK CKE CS RÂS CÂS WE A11 A10 Add H , refresh entry command ICS, RAS, CAS, CKE = Low, WE = High) ¿ uPD4516421 , 4516821, 4516161 After the , State Diagram uPD4516421 , 4516821, 4516161 Automatic sequence Manual input 815 NEC 4. 4.1


    OCR Scan     		PDF uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin d4516161 NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516

    1997 - Not Available

    Abstract: No abstract text available
    Text: 23 51 79 µPD4516421 , µPD4516421 , 0.45 µm 3rd L 0.40 µm µPD4516421 , 4516821, 4516161 2M × 4 × 2, 1M × 8 × 2, 512K × 16 × 2 10, 12 , : 83.56 mm 2 0.8 µm 0.65 µm 23 fF 21 [ MEMO ] 22 CHAPTER 4 µPD4516421 4.1 Features , cycle . 2,048 cycles / 32 ms 23 CHAPTER 4 µPD4516421 4.2 Evaluation Data (1/2


    Original     		PDF M12947XJ1V0IF00 PD4516421 PD4516821

    nec d4516

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT uPD4516421 , uPD4516821, uPD4516161 16M , m b e r uPD4516421 , 4516821, 4516161 [ x4, x8 ] f i? D4516 82hG 5- A10L NEC M em ory , inputs AT 1 : Bank select 5 NEC [/iPD4516161] üPD4516421 , 4516821, 4516161 50-pin Plastic , uPD4516421 , uPD4516821, uPD4516161 CONTENTS 4. Truth Table . 14 4.1 4.2 4.3 4.4 4.5 4.6 C om m and T , command (CS, CAS, WE = Low, RAS = High) uPD4516421 , uPD4516821, uPD4516161 CLK CKE CS RAS If the m


    OCR Scan     		PDF uPD4516421 uPD4516821 uPD4516161 16M-bit tPD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin nec d4516

    Not Available

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The / ¿PD4516421 , 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 , ¿¿PP4516421, 4516821, 4516161 Pin C onfigu ration s [ ¿(PD4516421 ] 44-pin Plastic TSOP(II) (400 mil) 1 , performed. 822 ■b457525 0QS7flZD E1S ■NEC 6. UPD4516421 , 4516821, 4516161 P rog ram


    OCR Scan     		PDF PD4516421, 16M-bit 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin S50G5-80-7JF3

    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT / ¿PD4516421 , 4516821, 4516161 16M-bit Synchronous , [, uPD4516421 ] 44-pin Plastic TSOP(II) (400 m ill AO to A11Note Address inputs DQO to DQ3 Data in p , N ote AO to A 10: Row address inputs : Bank select NEC j uPD4516421 , 4516821, 4516161 , 12 b427S25 O O STiafl 7Mb NEC / ¿PD4516421 , 4516821, 4516161 Self refresh entry command , / ¿PD4516421 , 4516821, 4516161 (2/3) Current state CS | RAS CAS WE Read with auto H


    OCR Scan     		PDF PD4516421, 16M-bit /iPD4516421, 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin b42755S

    IC-3394

    Abstract: NEC 4516821 PD4516421 UPD4516161G5A10 tsop 66 2M42 4516421G5-A12 4516821G5
    Text: µPD4516421G5-A10 4516421G5-A15 4516821G5-A10 Package 66 100 44-pin Plastic TSOP(II) 4516821G5 , DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421 , 4516821, 4516161 16M-bit Synchronous DRAM Description The µ PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152×4×2, 1,048,576×8×2 and 524,288×16×2 (word×bit×bank), respectively. The synchronous DRAMs achieve high-speed data transfer using the pipeline architecture. All inputs and outputs


    Original     		PDF PD4516421, 16M-bit 216-bit 44-pin 50-pin IC-3394U1 4516421G5-A12 IC-3394 NEC 4516821 PD4516421 UPD4516161G5A10 tsop 66 2M42 4516421G5-A12 4516821G5

    NEC 977

    Abstract: No abstract text available
    Text: D A T A SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421 , uPD4516821, uPD4516161 16M-bit Synchronous DRAM D escription The jj PD 4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random -access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 (wordxbitxbank), respectively. The synchronous DRAM s achieve high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive edge of the clock. The synchronous DRAM


    OCR Scan     		PDF uPD4516421 uPD4516821 uPD4516161 16M-bit 216-bit 152x4x2, 576x8x2 288x16x2 44-pin 50-pin NEC 977

    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421 , uPD4516821, uPD4516161 16M-bit Synchronous DRAM Description The uPD4516421 , uPD4516821, uPD4516161 are high-speed 16,777,216 , 2 -7 J F 5 1 2 K x 16 x 2 1 M x 8 x 2 2 M x 4 x 2 ; uPD4516421 , 4516821, 4516161 P a rt n u m b , command (CS. CAS. WE = Low, RAS = High) , uPD4516421 , 4516821, 4516161 Fig. 4 Column address and , H H L Row active H L Any state other than listed above L L H L X X X X X X uPD4516421


    OCR Scan     		PDF uPD4516421 uPD4516821 uPD4516161 16M-bit 216-bit 44-pin 50-pin

    1996 - c0c21

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4 M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M SDRAM : µPD4516421 are assembled. This module , pieces of 16M SDRAM : µPD4516421G5 (400 mil TSOP (II) [Double side] 2 MC-454BA80 Pin , outputs from the PLL CLOCK BUFFER shall be equal length. 2. D1 - D20 : µPD4516421 (2M words × 4 bits × 2


    Original     		PDF MC-454BA80 80-BIT MC-454BA80 PD4516421 MC-454BA80-A10 MC-454BA80-A12 c0c21

    Not Available

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454BA8C 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M SDRAM : uPD4516421 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise


    OCR Scan     		PDF MC-454BA8C 80-BIT MC-454BA80 uPD4516421 MC-454BA80-A10 MC-454BA80A12 MC-454BA80

    d4516161

    Abstract: MPD4516421
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421 , uPD4516821, uPD4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 , . Burst Termination uPD4516421 , uPD4516821, uPD4516161 T h e re are tw o m eth ods to term in ate a , | T17 j T18 j T19 | T20 [ T21 j , uPD4516421 , 4516821, 4516161 All Banks Precharge


    OCR Scan     		PDF uPD4516421 uPD4516821 uPD4516161 16M-bit PD4516421, 44-pin 50-pin VP15-107-2 IR35-107-2 d4516161 MPD4516421

    a2-xqa

    Abstract: IC-3394
    Text: DATA SHEET NEC juPD 4516421 , 4516821 , 4516161 16M-bit Synchronous DRAM MOS INTEGRATED CIRCUIT Description The uPD4516421 , uPD4516821, uPD4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2,1,048,576 x 8 x 2 and 524,288 x 16 x 2 , NEC ; uPD4516421 , 4516821, 4516161 In case CAS latency is 3 (burst length is not Full page), READ , capacitance Ci/o 2 5 pF 36 b427S25 0 0ÔSÔ51 ÔOR NEC UPD4516421 , 4516821, 4516161 DC


    OCR Scan     		PDF 16M-bit uPD4516421 uPD4516821 uPD4516161 216-bit 44-pin 50-pin IR35-107-2 VP15-107-2 a2-xqa IC-3394

    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454AA725 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AA725 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : , uPD4516421 A are assembled. This module provides high density and large quantities of memory in a small space without utilizing the , em ory Module 18 pieces of / ¿PD4516421AG5 (Socket Type) M C-454AA725F-A10 125 MHz (400


    OCR Scan     		PDF MC-454AA725 72-BIT MC-454AA725 uPD4516421

    56OX

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-454BA72 4M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : uPD4516421 are assembled. This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise


    OCR Scan     		PDF MC-454BA72 72-BIT MC-454BA72 uPD4516421 -454BA 72-A10 72-A12 56OX

    sm 0038 tsop

    Abstract: MC-454BA72F-A10
    Text: Module (Socket Type) Package MC-454BA72 Mounted devices 18 pieces of 16 M SDRAM : uPD4516421 (400


    OCR Scan     		PDF MC-454BA72 72-BIT MC-454BA72-A10 MC-53 sm 0038 tsop MC-454BA72F-A10

    Not Available

    Abstract: No abstract text available
    Text: DATA S H EE T_ MOS INTEGRATED CIRCUIT MC-454BA72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16M SDRAM : , uPD4516421 are assembled. This module provides high density and large quantities of memory in a small space without , -454BA72F-A10 83 MHz 200-pin Dual In-line M em ory Module 18 pieces of / ¿PD4516421G5 (Socket Type) M C


    OCR Scan     		PDF MC-454BA72 72-BIT MC-454BA72 uPD4516421 200S-50A4

    Not Available

    Abstract: No abstract text available
    Text: 200-pin Dual In-line M em ory Module 20 pieces of 16M SD RA M : (S ocket Type) , uPD4516421G5 , PLL C LO C K BU FFE R shall be equal length. 2. 4 D1 - D20 : , uPD4516421 (2M w ords x 4 bits x


    OCR Scan     		PDF MC-454BA80 80-BIT MC-454BA80 PD4516421

    D4516821G5-A12

    Abstract: nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fd>D4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The uPD4516421 , uPD4516821, uPD4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576 x8x2 and 524,288x16x2 (wordxbitxbank), respectively. The synchronous DRAMs achieve high-speed data transfer using the pipeline architecture. A ll , /Output Pin Function Pin nam e CLK In put/O utpu t Input uPD4516421 , 4516821, 4516161 Function CLK


    OCR Scan     		PDF D4516421, 16M-bit uPD4516421 uPD4516821 uPD4516161 216-bit 152x4x2, 288x16x2 44-pin 50-pin D4516821G5-A12 nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049

    4cmv

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4M-W ORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M S D R A M : uPD4516421 are asse m bled. T his m odule p ro vid e s high de nsity and large q u a n titie s of m em o ry in a sm all space w ith ou t utilizing the surfacem ounting te ch n o lo g y on the p rin te d circu it board. D ecoupling ca p a cito rs


    OCR Scan     		PDF MC-454BA80 80-BIT MC-454BA80 uPD4516421 4cmv

    1995 - IBM025161LG5D60

    Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
    Text: 4M uPD42S4210 HPM DRAM 4M uPD482445 HPM DRAM 4M uPD4516421 / 821/161 Synchronous


    Original     		PDF MB81141621 MB81141622 MB81G8322 MB81116421 TC59R1608 2ns500MHz TC59R0808 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT

    1997 - SO DIMM 72-pin

    Abstract: "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM
    Text: 2M × 8 1M × 16 Part number µPD4516421-PC µPD4516821-PC µPD4516161-PC LVTTL 3.3±0.3 · 44 , bits) 4M × 4 2M × 8 1M × 16 Part number Cycle time MIN. (ns) µPD4516421 10 (100 MHz) 12 (83


    Original     		PDF 8K/64* 4K/64 50-pin 32-pin PD4264405 PD4265405 SO DIMM 72-pin "simm 72 pin" uPD27C8000 2620 dynamic ram simm 72 pin DIMM 72-pin SIMM 72 MC-422000F32 8k refresh simm 72 edo dram 72-pin SO DIMM

    A91A

    Abstract: uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY
    Text: Organization (word x bit x bank) ¿¿PD4516421A, 4516821 A, 4516161A Part number , uPD4516421AG5-A80-7JF , uPD4516421AG5-A10-7JF , uPD4516421AG5-A12-7JF ,uPD4516821AG5-A80-7JF ,uPD4516821AG5-A10-7JF ,uPD4516821AG5-A12-7JF ,uPD4516161AG5-A80-9NF ,uPD4516161AG5-A10-9NF ,uPD4516161AG5-A12-9NF , uPD4516421AG5-A80L-7JF , uPD4516421 AG5-A10L-7JF , uPD4516421 AG5-A12L-7JF ,uPD4516821AG5-A80L-7JF ,uPD4516821 AG5-A10L-7JF ,uPD4516821 AG5-A12L , DATA SHEET NEC MOS INTEGRATED CIRCUIT uPD4516421A , uPD4516821A, uPD4516161A 16M


    OCR Scan     		PDF uPD4516421A uPD4516821A uPD4516161A 16M-bit PD4516421 516161A 216-bit 44-pin 50-pin 5-80-9N A91A uPD4516161AG5-A10-9NF nec 44pin NEC 4516821 TNC 24 mk 2 uPD4516161AG5-A80-9NF uPD4516161AG5-A10 NEC MEMORY

    i8085

    Abstract: Nec AC 160
    Text: D A TA S H E E T NEC MOS INTEGRATED CIRCUIT uPD4516421 , uPD4516821, uPD4516161 16M-bit Synchronous DRAM Description T h e //PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit sy n c h ro n o u s d y n a m ic ra n d o m -a cce ss m e m o rie s, o rg an ized as 2 ,0 9 7 ,1 5 2 x4 x2 , 1,048,576x8x2 and 5 2 4,28 8x1 6x2 (w o rd xb itx b a n k ), re sp e ctiv e ly . Th e sy n c h ro n o u s D R A M s a c h ie ve high-speed data tra n sfe r using the p ip elin e arch ite ctu re . All


    OCR Scan     		PDF uPD4516421 uPD4516821 uPD4516161 16M-bit //PD4516421, 216-bit 576x8x2 44-pin i8085 Nec AC 160

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