512KX16X2 Search Results

64201ASWM4G09TC

Abstract: SO-DIMM 144-pin
Contextual Info: 2M x 64 Bit PC-66 SDRAM SODIMM PC-66 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 64201ASWM4G09TC 144 Pin 2Mx64 SDRAM SODIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment The 64201ASWM4G09TC is a 2Mx64 bit, 9 chip, 144 Pin SODIMM module consisting of 8 512kx16x2

72201ASEM4G11T

Abstract: pc66 1998 specification
Contextual Info: 2M x 72 Bit PC-66 SDRAM DIMM PC-66 SYNCHRONOUS DRAM DIMM 72201ASEM4G11T 168 Pin 2Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72201ASEM4G10T is a 2Mx72 bit, 11 chip, 168 Pin DIMM module consisting of 10 512kx16x2

64101ASWM4G05TC

Abstract: SO-DIMM 144-pin DS535
Contextual Info: 1M x 64 Bit PC-66 SDRAM SODIMM PC-66 SYNCHRONOUS DRAM SMALL OUTLINE DIMM 64101ASWM4G05TC 144 Pin 1Mx64 SDRAM SODIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The 64101ASWM4G05TC is a 1Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 512kx16x2

2mx64 sdram

Abstract: 64201ASEM4G09T pc66 1998 specification DIMM 1998
Contextual Info: 2M x 64 Bit PC-66 SDRAM DIMM PC-66 SYNCHRONOUS DRAM DIMM 64201ASEM4G09T 168 Pin 2Mx64 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 64201ASEM4G09T is a 2Mx64 bit, 9 chip, 168 Pin DIMM module consisting of 8 512kx16x2

lEXRA lx5280

Abstract: RTL8181 lx5280 RTL818 bt 1690 scr Lexra SA2400 lx5280 datasheet realtek 802.11 AMF 4.0 DATASHEET
Contextual Info: RTL8181 Wireless LAN Access Point/Gateway Controller DATA SHEET ISSUE 4: June 10, 2003 RTL8181 Revision History Issue No 1 Issue Revision 0.1 Issue 2 0.2 Issue 3 0.3 Issue 4 1.0 CONFIDENTIAL Details of Change Originator David Hsu First Release 1. Add a section about system configuration.

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

d4516161

Abstract: NEC 1216 D451616 4516161 IC-3394 ba6x T8836 D4516161GS d4516 UPD4516161
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escrip tio n The /iPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 w ordxbitxbank , respectively.

Contextual Info: RTL8186/RTL8186P WIRELESS LAN ACCESS POINT/ GATEWAY CONTROLLER Preliminary DATASHEET Rev. 0.9 4 Aug 2004 Track ID: XXXXXXXXX RTL8186 COPYRIGHT 2003 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language in any form or by any

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

Contextual Info: 16Mb: x16 IT SDRAM Q X /M f^ L I IQ O T IM O rH lV ^ IM v ^ U O MT48LC1M16A1 S I T - 5 1 2 K x 1 6 x 2 banks INDUSTRIAL TEMPERATURE DRAM For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msD/html/datasheet.html

1MX16

Abstract: 32201ASQM4G05TWE ds1092-2 CK1100
Contextual Info: 2M x 32 Bit UNBUFFERED SDRAM DIMM 32201ASQM4G05TWE SYNCHRONOUS DRAM DIMM 100Pin 2Mx32 bit SDRAM DIMM based on 1MX16, 2 Banks 4K Refresh, 3.3V SDRAMs with SPD Pin Assignment General Description This module is an unbuffered 100 Pin Synchronous DRAM Dual In-line Memory Module DIMM organized as

HM62V8512LFP

Abstract: HM53861J M51419 16M dram dram zip 256kx16 m514280 hn27c1024hg 4M DRAM EDO M5241605 HM534253BT
Contextual Info: Memories Dynamic RAMs DRAM Access time ns 60 80 {HM5116100AS/ATS J F.P. 4k refresh -4Mx4 - {HM5116400AS/ATS ] F.P. 4k refresh 1HM51W16400AS/ATS ] F.P. 4k refresh 1HM5117400AS/ATS ] F.P. 2k refresh -3.3V operation- 16M- 70 -16Mx1 -3.3V operation— 2Mx8 -3.3V operation-

BA1T12

Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.

RTL8181

Abstract: lEXRA lx5280 lx5280 RTL818 GRF5101 realtek 802.11 RTL8181P PLL-01 TXC 40MHz oscillator INCOMING RAW MATERIAL INSPECTION
Contextual Info: RTL8181/RTL8181P WIRELESS LAN ACCESS POINT/ GATEWAY CONTROLLER DATASHEET Rev. 1.01 12 December 2003 Track ID: JATR-1076-21 RTL8181/RTL8181P Datasheet COPYRIGHT 2003 Realtek Semiconductor Corp. All rights reserved. No part of this document may be reproduced,

Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /;PD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The /¿PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access m emories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

SiS301

Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Contextual Info: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

eprom 2904

Abstract: 4502 C DRAM 64kx16
Contextual Info: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —

D4516821G5-A12

Abstract: nec 14t t4 bst 1046 xrba IC-3394 ba6x PD4516421 D4516821 nec 44pin SN1049
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT fd>D4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The jiPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random-access memories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.

IC-3394

Abstract: NEC 4516821 PD4516421 UPD4516161G5A10 tsop 66 2M42 4516421G5-A12 4516821G5
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µ PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.

1MX16

Abstract: 32101ASQM4G03TPE DS1092-4
Contextual Info: 1M x 32 Bit UNBUFFERED SDRAM DIMM 32101ASQM4G03TPE SYNCHRONOUS DRAM DIMM 100Pin 1Mx32 bit SDRAM DIMM based on 1MX16, 1 Bank 4K Refresh, 3.3V SDRAMs with SPD Pin Assignment General Description This module is an unbuffered 100 Pin Synchronous DRAM Dual In-line Memory Module DIMM organized as

plcc32 pinout

Abstract: BIOS 32 Pin PLCC TSOP 28 SPI memory Package flash 89C58 64Kx8 CMOS RAM sst BIOS 8 Pin PLCC tsop32 static ram 64kx8 SST49LF040A MCU 64KX16
Contextual Info: Application Specific Memory Products Serial Flash—45 Series ComboMemory Family—31, 32 & 34 Series The Serial Flash family of products is a low-power application specific memory that implements Read and Program/Erase operations through the Serial Peripheral Interface SPI bus compatible serial protocol.

NEC 977

Contextual Info: D A T A SHEET NEC MOS INTEGRATED CIRCUIT jUPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM D escription The jj PD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynam ic random -access m em ories, organized as 2,097,152x4x2, 1,048,576x8x2 and 524,288x16x2 wordxbitxbank , respectively.