MB811161622 Search Results

Contextual Info: MEMORY 1 M x 64 BIT 0/-84/-67 168-pin, 1 Clock, 1-bank, based on 1 M x 16 BIT SDRAMs with SPD DESCRIPTION The Fujitsu MB8501S064AB is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting of four MB811161622A devices which organized as two banks of 1 M x 16 bits and a 2 K-bit

Contextual Info: MB811161622A 1/2 IL08 C-MOS 16 M (2,048,000 x 8)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 GND GND 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 PIN NO. I/O SIGNAL 26

MDS-168P-P08

Abstract: 168PA MB811161622A mb811161622
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11101-2E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8501S064AC-100/-84/-67 168-pin, 1 Clock, 1-bank, based on 1 M × 16 BIT SDRAMs with SPD • DESCRIPTION The Fujitsu MB8501S064AB is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM

mb811161622c

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11120-1E MEMORY Un-buffered 1 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM 144-pin, 2 Clock, 1-bank, based on 1 M × 16 Bit SDRAMs with SPD, Low-power version

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

Contextual Info: MEMORY 1 R/Ix 84 BIT OUS DYNAMIC RAM SO»DIMM M 1S06 / • v r * * . I*-"I q o / “ £ 4/-67M00L/-84L/-67L/-100SA84S/-67S 144-pin, 2 Clock, 1-bank, based on 1 M x 16 Bit SDRAMs with SPD, Low-power version I DESCRIPTION The Fujitsu MB8501S064CE is a fully decoded, CMOS Synchronous Dynamic Random Access Memory

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

MB8508S064AE-100L

Abstract: MB8508S064AE
Contextual Info: SDRAM Modules 2 • Synchronous ORAM Modules Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (Wx&) 2Mx72 Part Number Mounted Device Clock Access Access [Capacity) x Frequency CLK tank Time 1 Time 2 number max. max. (ns) max. (ns) «Package» (MHz) MB8502SQ72AG-1OQ

15j100

Contextual Info: SDRAM 1 I Synchronous DRAM: SDRAM (CMOS) VCC= Organization (W * b) Part Number Clock Frequency max. (MHz) M B 81117421A-100 100[10] Access Time 1 Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) + 3.3 V ± 0.3V , Ta= 0°C to +70 °C Power Consumption

mb811161622c

Abstract: MB811161622
Contextual Info: July 1997 Revision 1.0 data sheet SOB1UL6414- 67/84/100 T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SOB1UL6414-(67/84/100)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.