2KX8 Search Results

C8450

Abstract: 952100201 100203
Contextual Info: T em ic see S em ico n d u cto rs SCC Reference List ESA/SCC Specifications SCC Number Features TEMIC Fart Number Package S C C 930I01501 85 ns 50 u A 2K x8 SR A M H M C -6 5 1 6 2 E S C C 930Ì01502 85 ns 5 0 p A 2Kx8 SR A M H M 4 -6 5 Í6 2 E LCC32 S C C 930101503

Contextual Info: Am28C256 3 2Kx8 Electrically Erasable PROM Am28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 1 0 0 pA power-down current

sop28

Abstract: STK22C48 STK22C48-NF25 STK22C48-NF45 tps 1806 239 SOIC
Contextual Info: STK22C48 2Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 25, 45 ns Read Access & R/W Cycle Times The Simtek STK22C48 is a 16Kb fast static RAM with a nonvolatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance

Contextual Info: fax id: 5201 CY7C132/CY7C136 CY7C142/CY7C146 W CYPRESS 2Kx8 Dual-Port Static RAM Features Functional Description True Dual-Ported memory cells which allow sim ulta­ neous reads of the same mem ory location 2K x 8 organization 0.65-micron CMOS for optimum speed/power

HYC9088

Abstract: COM20022 COM20022I COM20022I3V-HD COM20022I3V-HT
Contextual Info: COM20022I 3V 10 Mbps ARCNET ANSI 878.1 Controller with 2Kx8 On-Board RAM Datasheet Product Features ƒ New Features − − − − − ƒ Data Rates up to 10 Mbps Selectable 8/16 Bit Wide Bus With Data Swapper Programmable DMA Channel Programmable Reconfiguration Times

com20022i3v-ht

Abstract: HYC9088 COM20022 COM20022I COM20022I3V-HD RG62
Contextual Info: COM20022I 3.3V Rev.C 10 Mbps ARCNET ANSI 878.1 Controller with 2Kx8 On-Chip RAM Datasheet Product Features New Features ƒ − Data Rates up to 10 Mbps − Selectable 8/16 Bit Wide Bus With Data Swapper − Programmable Reconfiguration Times Eight, 256 Byte Pages Allow Four Pages TX and

6116 block diagram

Contextual Info: Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL PURPOSE CMOS SRAM FEATURES TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS SINGLE 5 VOLT SUPPLY EQUAL CYCLE AND ACCESS TIME NO CLOCK AND STROBES REQUIRED GATED INPUTS WIDE TEMPERATURE RANGE : - 55 TO + 125 C

hm65161-2

Abstract: 65161
Contextual Info: IlM lI September 198Ç HM 65161 DATA SHEET 2kX8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME MILITARY: 90 ns max INDUSTRIAL : 80 ns (max) COMMERCIAL : 70 ns (max) LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 25 nW (typ) DATA RETENTION : 4 |iW (typ)

CY7C136

Abstract: CY7C132 CY7C146 2Kx8 Dual-Port Static RAM z1013 CY7C132-55PI CY7C136-55NC
Contextual Info: fax id: 5201 C Y 7 C 1 3 2 /C Y 7 C 1 3 6 C Y 7 C 1 4 2 /C Y 7 C 1 4 6 2Kx8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow sim ulta­ neous reads of the sam e memory location • 2K x 8 organization • 0.65-micron CMOS fo r optimum speed/power

Contextual Info: PROM/RPROM SELECTION GUIDE ARCHITECTURE 2 32K x 8 WS57C71C 16K x 8 WS57C51C 8K x 8 WS57C49C 4K x 8 WS57C43C 2K x 8 REGISTERED WS57C45 2K x 8 WS57C191C 2Kx8 WS57C291C 2K x 8 (3 VOLT) WS57LV29IC 45 50 55 ACCESS TIME (ns) NOTE: Shaded area is Advance Information.

THE OLDEST motorola handbook

Abstract: HYC9088 COM20022 RG62
Contextual Info: COM20022 10 Mbps ARCNET ANSI 878.1 Controller with 2Kx8 On-Board RAM FEATURES !" !" !" !" !" !" !" !" !" !" New Features Data Rates up to 10 Mbps Selectable 8/16 Bit Wide Bus With Data Swapper Programmable DMA Channel Programmable Reconfiguration Times 48 Pin TQFP Package

HT6116 -7LL

Abstract: HTG116-70 HT6116 HT6116-70
Contextual Info: H T 6 1 1 6 -7 0 H O L T E K 2 5 S ' 3 > ' ^ > c : 5P \ 2 K - 8 B it S R A M Features Power dawn by pin CS TTL compatible Interface ievels Pin compatible wlth standard 2Kx8 bits of EPROM/MASK ROM Three’State output pins _ • Single 5V power supply * Low standby and operating power

65162

Abstract: transistor fn 1016
Contextual Info: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS

2kx8 eeprom

Contextual Info: FT28C16 Parallel EEPROM 16K 2Kx8 Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • –Internal Address and Data Latches –Internal Control Timer –Automatic Clear Before Write

D12 000R

Abstract: HYC9088 micro-programmed control-unit COM20022 RG62
Contextual Info: COM20022 10 Mbps ARCNET ANSI 878.1 Controller with 2Kx8 On-Board RAM FEATURES !" !" !" !" !" !" !" !" !" !" New Features Data Rates up to 10 Mbps Selectable 8/16 Bit Wide Bus With Data Swapper Programmable DMA Channel Programmable Reconfiguration Times 48 Pin TQFP Package

HA 13645

Contextual Info: fax id: 5201 CY7C132/CY7C136 CY7C142/CY7C146 2Kx8 Dual-Port Static RAM Featu res Functional Description • True Dual-Ported memory cells which allow sim ulta­ neous reads of the same memory location • 2K x 8 organization • 0.65-micron CMOS for optimum speed/power

63S1681

Abstract: monolithic memories 53S1681 63S1681A 2048x8 53S1681A Monolithic Memories PROM programming
Contextual Info: High Performance 2 0 4 8 x 8 PROM TiW PROM Fam ily 53 /63S 1681 5 3 /6 3 S 1 6 8 1 A Features/Benefits Description • 35-ns maximum access time The 53/63S1681 is a high-speed 2Kx8 PROM which uses industry standard package and pin out. In addition, the device is

ARCNET driver

Abstract: HYC9088 COM20022 COM20022I COM20022ITQFP NIOS
Contextual Info: COM20022I 10 Mbps ARCNET ANSI 878.1 Controller with 2Kx8 On-Board RAM Datasheet Product Features New Features − − − − − Eight, 256 Byte Pages Allow Four Pages TX and RX Plus Scratch-Pad Memory Data Rates up to 10 Mbps Selectable 8/16 Bit Wide Bus With Data Swapper

Contextual Info: fax id: 5201 CY7C132/CY7C136 CY7C142/CY7C146 W CYPRESS Features 2Kx8 Dual-Port Static RAM Functional Description True Dual-Ported memory cells which allow sim ulta­ neous reads of the same mem ory location 2K x 8 organization 0.65-micron CMOS for optimum speed/power

Contextual Info: G M/HITE /MICROELECTRONICS 2 WS128K32-25XMRH 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A cce ss Tim e of 25ns R adiation T o le ra n t ■ Organized as 128Kx32; User C onfig u rab le as 2 56K x16 or 5 1 2Kx8 • T o t a l Dose Hardness th ro u g h 1x106 rad Si02

Contextual Info: BR28C16A-150 BR28C16A-150 2KX8 \¿y h CMOS 5V EEPROM 2KX8Bit CMOS 5V EEPROM • W K 'tfiiB l/D im ensionsiU nit : mm BR28C16A-150 « , 2048 7 - K X 8 t ' "j £, EEPROM) T* 32.0 +°02 To 7-1 •j'7 RAM t £ t if'T ' ? i t „ /W 24 I i5 0 n s £ > w E < s ^ ( t t l

2817A250

Abstract: l 817a 2817A200 CI 817a 2817A-25 2817A300 L817 2817 EEPROM eeprom 2817
Contextual Info: 2817A/5517A Timer E2 16K Electrically Erasable PROMs October 1989 Description Features • Ready/Busy Line for End-of-Write ■ High Endurance Write Cycles SEEO's 5517A and 2817A are 5V only, 2Kx8 electrically erasable programmable read only memories EEPROMs . They are packaged in a 28 pin package and

UM61

Abstract: um6116 UM6116-2 umg1 umc um61 2kx8 EPROM 16KEPROM AFLC
Contextual Info: 2Kx8 CMOS SRAM Features q q n Single i-5 volt power supply Acccss limes 90/120 ns max. Currcn : Standard version 0perating: Standby: m Pin compatible with Standard 16K EPROM/Mask R O M n UMG1 16-2/-3 ” UM6116-2L/-3L 1 0 0 mA (max.) 5 0 /JA ( m a x . )

A7LC

Abstract: 48zi VITELIC oefl
Contextual Info: V IT E L IC V61C33 HIG H PERFORMANCE LOW POWER 2 K x 8 B IT CMOS DUAL PORT M EM ORY OBJ ECU VE SPECIFICATIONS = = = — F e a tu re s D e s c rip tio n • 2K x 8 bit CMOS static RAM with 3-state outputs The Vitelic V61C33 is a CMOS 2Kx8 high-speed dual port static RAM with advanced arbitration logic