53S1681 Search Results

C57401AJ

Abstract: C57401J/883B M38510 numbering C57402AJ AMD - C57401J MMI PAL14L8 5962-8779105EX 53RA1681 C57401L
Contextual Info: M ilitary Specialty Memory Whatever your military data buffering needs, Advanced Micro Devices has the right specialty memory device to fit your applica­ tion. All of our military bipolar and CMOS First-in First-out FIFO memories are fully screened to MIL-STD-883.

MMI PAL14L8

Abstract: PAL20L10 MMI PAL20X10 MMI MMI DATE CODE PAL 53RA1681 PAL16R6 MMI
Contextual Info: M ilitary PAL Devices Q uality Programs The Military Product Division quality system conforms to the following Mil-Standards: Mil-M-38510, Appendix A, “Product Assurance Program" Mil-Q-9858, "Quality Program Requirements” Mil-l-45208, "Inspection System Requirements”

LW385

Abstract: 28S166 DATA TRANSISTOR MOTOROLA TYPE MRA 14 /17 /25 ksp 13 f10 M38510 cross index 82S190 a2-o2 27S191 27s19 lw38510
Contextual Info: MIL-*M-38510/210D Win-MIL-*M-38510/210C 31 January 1984 MILITARY SPECIFICATION nnM«Ii.C„R.0CI R C U I T S * DISIT*L, 16.384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON This specification Is approved for use by all Depart­

DIP 16 DRAWING Advanced Micro Devices

Abstract: 57401j mmi SINGLE SHIP ORGAN INCOMING RAW MATERIAL INSPECTION checklist Defense 5962-85155 MMI PAL14L8 38510 Cross Reference
Contextual Info: M ilitary S p ecialty M em ory Whatever your military data buffering needs, Advanced Micro Devices has the right specialty memory device to fit your applica­ tion. All of our military bipolar and CMOS First-in First-out FIFO memories are fully screened to MIL-STD-883.

63S1681

Abstract: monolithic memories 53S1681 63S1681A 2048x8 53S1681A Monolithic Memories PROM programming
Contextual Info: High Performance 2 0 4 8 x 8 PROM TiW PROM Fam ily 53 /63S 1681 5 3 /6 3 S 1 6 8 1 A Features/Benefits Description • 35-ns maximum access time The 53/63S1681 is a high-speed 2Kx8 PROM which uses industry standard package and pin out. In addition, the device is

Contextual Info: INCH-POUND MIL-M-38510/210F 19 June 2013 SUPERSEDING MIL-M-38510/210E 27 March 2006 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 16,384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995

wf vqc 10d

Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
Contextual Info: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction

Monolithic Memories PROM programming

Abstract: 63S1681
Contextual Info: High Perform ance 2 0 4 8 x 8 PROM TiW PROM Fam ily 53/63S 1681 5 3 /6 3 S 1 6 8 1 A Features/ Benefits Description • 35 n# maximum access time The 53/63S1681 is a high-speed 2Kx8 PROM which uses industry standard package and pin out. In addition, the device is

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

Contextual Info: S High Performance 2 0 4 8 x 8 PROM TiW PROM Fam ily Ab> 53/63S 1681 53 /6 3S 16 81 A Features/Benefits Description • 35-ns maximum access time The 53/63S1681 is a high-speed 2Kx8 PROM w hich uses industry standard package and pin out. In addition, the device is

77s191

Abstract: Signetics 82S191
Contextual Info: INCH-POUND MIL-M-38510/210E 27 March 2006 SUPERSEDING MIL-M-38510/210D 16 May 1986 MILITARY SPECIFICATION MICROCIRCUIT, DIGITAL, 16,384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY PROM , MONOLITHIC SILICON Inactive for new design after 24 July 1995