TEKELEC 297
Abstract: intel 4269 mcs48 assembly language SEVEN SEGMENT FUNCTION TABLE OF IC 7447 bcd to hex using ic 7447 Intel 8245 intel 8048 8245 mcs-48 intel 4269 rep 197b TA 365 TEKELEC
Contextual Info: intJ AP-40 APPLICATION NOTE June 197B <s> r? tV8P> A sy rV A''" O ? N ^ rf<> > v « ® Intel Corporation, 1978 w ^ •c T v > V 9800755 R elated In te l P u b lic atio n s ” M CS-48 M ic ro c o m p u te r F a m ily U sers' M a n u a l” "M C S-48 A s s e m b ly Language P ro g ra m m in g M a n u a l”
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ap-40cs-48b-1160d-2085+13d-80000732trg20lstekelec 297intel 4269mcs48 assembly languageseven segment function table of ic 7447bcd to hex using ic 7447intel 8245intel 8048 8245mcs-48 intel 4269rep 197bta 365 tekelec
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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N2150
Abstract: 2n7151 cage 11851 vfd S1 DELTA t41l FCABLE11 2N2151 546i 00CU Transistor CR64
Contextual Info: I ● r I I Ill e documentation ana process conversion medsures necessary to comply .itn this revision shall be 1991. co.pletea by 10 C&ok I I I I HIL-S-1950+3/Z77D I 10 JLUIe 1991 SUPERSEDING MI L- S-19 SO0/277C 12 August 1968 MILITARY SEH!CONCYUCTOR SPECIFICATIOW
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hil-s-19503/z77dso0/277c2n21s0+122n2151s-195cw2n21502n7151n2150cage 11851vfd s1 deltat41lfcable11546i00cutransistor cr64
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mosfet p321
Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS
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an215a/dan215amosfet p321motorola an215a application+8y12tusing linvill techniquesan166 linvillh12c transistor makingdual-gate ybmotorola an215ay parameters of transistorsy11t
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2N924
Abstract: IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122
Contextual Info: INTEX/ SEMITRONICS CORP 27E D • MfibTEMb Q0D027Ö 4 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon small signal transistors general purpose — alloy i f j 1#* 1 1 i Polarity ! ì 2H32M i 2N3278 ‘ 1ÎN32tk <
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q0d0272n327an32tk2n32w+152n323b-2n332h92j2n9242n9262n9272n937in12202n1654intextransistor 2sc 12222n1232h922n1222n1474terminals of 2n122
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2N924
Abstract: 2N936 2N1226 2N3346 2N1623 2N923 2N1221 2N1240 2N925 2N1025
Contextual Info: je m lt r o n ic r sem iconductors s s S em itronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Polarity tm Power Dissipation @ 25°C mW t . ij (°C) BVcbo (volts) PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
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2n327a2n327b2n32ba2n328b+112n329a2n9242n9362n12262n33462n16232n9232n12212n12402n9252n1025
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2N3614
Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
Contextual Info: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation
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2n1552n1562n1582n158a+142n173t0-132n1742n1762n234a2n36142n4412n15532n15602n511b2n6692n5112n33121534a
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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AN215A
Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
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an215a/dan215amosfet p321y12t+7using linvill techniquescommon base amplifier circuit designingusing linvill techniques for r. f. amplifiersy11th21by12fcommon emitter amplifier circuit designing
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2N217s
Abstract: 2N1028 2N923 2N936 2NJ228 2n1854 2N3346 2N326A 2N16S5 2N1025
Contextual Info: JGiïlitrOniCT sem icon d u ctors ä Sem ilronics Corp. silicon transistors silico n sm all signal transistors general purpose — alloy Type Polarity Power Dissipation @ 25°C mW Tj CC) BV c b o (volts) B U ,. D*CE— (volts) (Max.) PNP PNP PNP PNP PNP
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2n327a2n327b2n326a2n328b+142n329a2n32sb2n330a2n9232n9242n9252n217s2n10282n9362nj2282n18542n33462n16s52n1025
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cmc 2951
Abstract: equivalent transistor c 5888 2Z12 S211 "18621" MICROWAVE TRANSISTOR 32359 AM 5888 40738
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> TECHNICAL NOTE 1. P dBm Conversion Table for dBm to m W : P (m w ) = 10 10 , dBm 0.0 0.1 0.3 0.2 0.4 P(dBm) = 0.5 10 * log P ( mw) 0 .6 0.7 0.8 0 .9 0 .0 1.00 1.02 1.05 1.07 1.10 1.12 1.15 1.17 1.20 1.23 1.0 1.26 1.29 1.32
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mo-20cmc 2951equivalent transistor c 58882z12+6s21118621microwave transistor32359am 588840738
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MC789P
Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series
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c300/m1000/mmc660c500/m+16c2100/mc2000c3000930/mc200/mc900/mmc789pmc946f/mc789pl9945mc2100 elsmc1110gmc787pmc879psg4002mc779pmc892p
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mosfet p321
Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation
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an215a/dan215amosfet p321y12t+7using linvill techniquesusing linvill techniques for r. f. amplifiersy11tan166b22k2s122z12
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2N236A
Abstract: 2N458 2N554 2N2148 2N511 2n418 2N1203 2N3614 2n1021 2N214
Contextual Info: . • ■ _ m M ô b^ EM b 0 0 0 0 2 1 3 0 H 7^;33" ° ¡ J E iT lltrO n SEMICONDUCTORS IN TE X/ S E N I T R O N I C S CORP S e m it r o n ic s C o r p . 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power
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2n1552n1562n1582n158a+152n173t0-132n1742n1762n234a2n236a2n4582n5542n21482n5112n4182n12032n36142n10212n214
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2N1227
Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
Contextual Info: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation
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2n1552n1562n1582n158a+142n173t0-132n1742n1762n234a2n12272m2142n12021j632n21482ns402n5112n236a2n420
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ftt-10a
Abstract: FTT-10 echelon IMIT thermostat nv16 D2-3372 2H41 FTT-10 078-0156-01F 1h41 NV10
Contextual Info: LonWorks Communication Option Module for VTAC 7 Drives M/N 2LW3000 Instruction Manual D2-3498 The information in this manual is subject to change without notice. Throughout this manual, the following notes are used to alert you to safety considerations:
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2lw3000d2-3498ftt-10aftt-10 echelon+8imit thermostatnv16d2-33722h41ftt-10078-0156-01f1h41nv10
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6mc707g2n328ln4005 diode reverse current and voltagemc708gc844pts36a
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Intel 8080 Users Manual
Abstract: intel 8080 manual Intel ICE-30 SCANBE s203 Multibus arbitration protocol SBC 104 intel motherboard schematic Multibus ii protocol SCANBE SCANBE ejector
Contextual Info: in y APPLICATION NOTE 5 &c p o ' z <ti íí' i Intel Corporation, 1S77 c çtr AP-28 Related Intel Publications IN TE L LE C M icrocom puter D evelopm ent System Manual, 98-132. Hardware Reference System 80/1 0 M icrocom puter Hardware R eference Manual, 98-316.
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ap-28ch-6021intel 8080 users manualintel 8080 manual+8intel ice-30scanbe s203multibus arbitration protocolsbc 104intel motherboard schematicmultibus ii protocolscanbescanbe ejector
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Motorola transistors MRF 947
Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,
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motorola transistors mrf 947motorola hep cross reference2n50702n5591 motorola+6semicon volume 1mrf532transistor equivalents for 2n3866siemens semiconductor manualmicrolab splitter specification sheetpt9797
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diode C522
Abstract: A02N-5
Contextual Info: 123455657 Enhanced LIN Transceiver 89ABCD9E7 1 RxD 1 EN 2 WAKE 3 TxD 4 Rev.2.x and SAE J2602 1 Baud rate up to 20 kBaud 1 Wide operating voltage range VS = 5 to 27 V 1 Very low standby current consumption of 10µA in sleep mode MLX 80020 1 Bus and local wake up capable with source recognition
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89abcd9e7j2602mlx80020iso14001+2diode c522a02n-5
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T-532G-11
Abstract: 3G11 544y
Contextual Info: Package Outline s o ¡Q* —• I Polarity Device Super-bright Red (R / Orange (E)/ Yellow (Y )/Super/ Green (G )/ Device Red (D) Bright Red (H) Amber (A) Bright Yellow (T) Bright Green (F) Package \ p = 6 6 0 nm Xp = 6 5 5 /6 9 5 nm Xp = 6 3 5 /6 1 0 nm
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csd-5622r-21-5623d-5623hcst-532r-21+9t-532dcsd-5622e-1csd-5622y-1-5622gcsd-5623y-1csd-5623a-1t-532g-113g11544y
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