2N122 Search Results

2SB641

Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

Contextual Info: 2N1220 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Contextual Info: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart­

Contextual Info: 2N1229 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

2N1221

Contextual Info: 2N1221 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N4007 diode

Abstract: Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number HA7806 HA7808 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 10 ~~~~;~ 2S3021 2S3021 2N2004 2N1228 2N2370 2N2372 2S3221 2Nl027 15 20 ~~~~H 2N862 KT209A KT501A KT501B BCY49 2N1229 2N4007 A5T5221 2N5221 2N995

bjt specifications

Abstract: 2N1224 TRANSISTORS BJT list
Contextual Info: 2N1224 Ge PNP Lo-Pwr BJT 15.00 Transistors Transistors Bipolar Ge PNP Low-Power . Page 1 of 2 Enter Your Part # Home Part Number: 2N1224 Online Store 2N1224 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N1224

Abstract: 2N1225
Contextual Info: MIL=S=195QQ/189B AMENDMENT 1 24 February 1978 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 This amendment forms a part of Military Specifipation MIL-S-19500/189B, dated 18 January 1972, and is a^fioyed for use

2N1226

Contextual Info: 2N1226 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60ã V(BR)CBO (V)60 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.20 h(FE) Max. Current gain.175

Contextual Info: 2N1224 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40ã V(BR)CBO (V)40 I(C) Max. (A)10m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain.20 h(FE) Max. Current gain.175

Contextual Info: 2N1228 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

BC137

Abstract: LM3661TL-1.40 G2025 LOW-POWER SILICON PNP ST8500 BC137 800 BCY90 NB021 BCY91 2N85
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 NB023FL NB023FZ 2N4285 2SA987F NB021EV NB021FV NB023EV NB023FV 2SA987E 2SA880 ~~~j~~ 15 20 25 30 35 40 2SA721 2N1223 2S3010 2S3010 2N4937 2N4938 2N4939 2N4940 2N4941 2N4942 2N935 2S3210 2N5110 TIPP32 2S3020

2N1225

Contextual Info: 2N1225 Ge PNP Lo-Pwr BJT 9.38 Transistors Transistors Bipolar Ge PNP Low-Power B. Page 1 of 1 Enter Your Part # Home Part Number: 2N1225 Online Store 2N1225 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N1223 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: DC/DC Converters TES 2N Series, 2 Watt RoHS compliant Features ◆ Low Profile SMD-Package ◆ Wide 2:1 Input Voltage Range ◆ I/O-Isolation 1500 VDC ◆ Input Filter meets EN55022, Class A ◆ Operating Temperature Range pending -40°C to +71°C ◆ Short-Circuit Protection

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: DC/DC Converter TES 2N Series 2 Watt Features Ultracompact SMD-Package Wide 2:1 Input Range I/O-Isolation 1500 VDC Input Filter meets EN55022, Class A Low Ripple and Noise Shortcircuit Protection Operating Temperature Range -40°C to +75°C 3 Year Product Warranty

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

transistor t05

Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Contextual Info: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

DAP 011

Abstract: JEDEC J-STD-033b tes2n
Contextual Info: DC/DC Converters TES 2N Series, 2 Watt Features ◆ Low profile SMD-package ◆ Wide 2:1 input voltage range ◆ I/O isolation 1500 VDC ◆ Input filter meets EN55022, class A ◆ Operating temperature range –40°C to +85°C ◆ Short-circuit protection

TSR 1-2450

Abstract: TMR 6-2411WI 12-0-12 transformer 500ma TRACOPOWER ten 5-1211 TEN 3-1213 TRACO POWER traco tma 1212d traco ten5 application note TSR 3-2450 tmr2e TEP-160
Contextual Info: Company Profile TRACO ELECTRONIC AG is a Swiss company with headquarter based in Zurich, Switzerland. As a leading power supply specialist with more than 30 years of experience we are dedicated to the design and manufacturing of high quality DC/DC and AC/DC