2C22 Search Results
2C22 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 133-512C-22D |
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Paladin Plus 5-Pair, 8 Column, Direct Orthogonal Header, Double End Wall, 2.25mm Wipe, NiS | |||
| 133-812C-22H |
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Paladin Plus 8-Pair, 8 Column, Direct Orthogonal Header, Double End Wall, 2.25mm Wipe, APP | |||
| 133-612C-22H |
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Paladin Plus 6-Pair, 8 Column, Direct Orthogonal Header, Double End Wall, 2.25mm Wipe, APP | |||
| 133-712C-22H |
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Paladin Plus 7-Pair, 8 Column, Direct Orthogonal Header, Double End Wall, 2.25mm Wipe, APP | |||
| 133-612C-22D |
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Paladin Plus 6-Pair, 8 Column, Direct Orthogonal Header, Double End Wall, 2.25mm Wipe, NiS |
2C22 Datasheets (22)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2C-22 | Behlman Electronics | DC-DC Converter, (12) V to (12) V | Original | 68.2KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2C-22 | Broadband TelCom Power | DC-DC Converter, (24) V to (12) V | Original | 71.83KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2C2222A |
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Chip Type 2C2222A Geometry 0400 Polarity NPN | Original | 28.65KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2C2222AHV |
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NPN Silicon Small Signal Transistor | Original | 450.57KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2C2-2E-505 |
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Cables, Wires - Management - Accessories - ENDPLATE 2-TYPE 505 | Original | 860.99KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2C22x58SC-8B | Altech | Fuse 2A 660V DIAZED (BOTTLE) FUSES | Original | 472.69KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2C22x58SC-9B | Altech | Fuse 2A 660V DIAZED (BOTTLE) FUSES | Original | 472.69KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22
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JCET Group | SOD-123 plastic-encapsulate Zener diode with 350mW power dissipation, featuring planar die construction, available in lead-free version, suitable for automated assembly, with zener voltage ranging from 2.4V to 43V and low forward voltage of 0.9V at 10mA. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22S
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Shenzhen Heketai Electronics Co Ltd | Surface mount Zener diode with 200 mW power dissipation, available in SOD-323 package, featuring zener voltages from 2.0 V to 51 V, suitable for general purpose voltage regulation applications.Surface mount Zener diode with 200 mW power dissipation, available in SOD-323 package, featuring medium current capability and general purpose voltage regulation from 2.0 V to 51 V.Surface mount Zener diode with 200 mW power dissipation, available in SOD-323 package, featuring medium current capability and general purpose voltage regulation from 2.0 V to 51 V. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22S
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Jiangsu JieJie Microelectronics Co Ltd | Silicon planar Zener diode in SOD-323 surface mount package with 200 mW power dissipation, available in various breakdown voltages from 2.4 V to 43 V, featuring low reverse leakage and high reliability for precision voltage regulation.Silicon planar Zener diode in SOD-323 surface mount package with 200mW power dissipation, available in various zener voltages from 2.4V to 43V, featuring high reliability and low forward voltage of 0.9V at 10mA.Silicon planar Zener diodes in SOD-323 surface mount package with 200mW power dissipation, available in various breakdown voltages from 2.4V to 43V, featuring high reliability and low forward voltage of 0.9V at 10mA. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22
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AK Semiconductor | Surface-mount Zener diode in SOD-123 package, 500 mW power dissipation on ceramic PCB, zener voltage range 2.4 V to 43 V, suitable for automated assembly, available in lead-free version. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22
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SLKOR | Planar Die, 500mW, General Purpose, Medium Current, SOD-123, UL 94V-0, MSL 1, 0.9V @ 10mA, 305°C/W, -65 to +150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22S
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Shandong Jingdao Microelectronics Co Ltd | Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, and typical thermal resistance of 625°C/W, suitable for automated assembly.Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, low forward voltage, and suited for automated assembly.Silicon Planar Zener Diode in SOD-323 package with 200mW power dissipation, reverse voltage range 2.4V to 43V, low forward voltage of 0.9V at 10mA, and operating temperature from -55°C to +150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22
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Microdiode Semiconductor | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZT52C22
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SUNMATE electronic Co., LTD | Surface mount silicon Zener diode in SOD-123FL package with 2.4 to 39 V zener voltage range, 500 mW power dissipation on ceramic PCB, and operating temperature from -65 to +150 °C.Surface mount silicon Zener diode in SOD-123FL package with 500 mW power dissipation, 2.4 to 39 V zener voltage range, and operating temperature from -65 to +150 °C.Surface mount silicon Zener diode in SOD-123FL package, 2.4 to 39 V zener voltage range, 500 mW power dissipation on ceramic PCB, operating temperature -65 to +150 °C, suited for automated assembly and general purpose medium current applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22S
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Microdiode Semiconductor | Plastic-encapsulated, SOD-323, solderable terminals, polarity marking, any position, 0.00548g. Planar die, 500mW max, Zener reverse 2.0V-75V, surface mount. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22S
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AK Semiconductor | Zener diode in SOD-323 package, 200 mW power dissipation, reverse voltage range 2.4V to 75V, low dynamic impedance, designed for general purpose and automated assembly applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22
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Shenzhen Heketai Electronics Co Ltd | Surface mount Zener diode in SOD-123 package with 500 mW power dissipation, available with zener voltages from 2.4 V to 75 V, featuring planar die construction and low forward voltage of 1 V at 10 mA.Surface mount Zener diode in SOD-123 package with 500 mW power dissipation, available with zener voltages from 2.4 V to 75 V, low forward voltage of 1 V at 10 mA, and operating junction temperature up to 150 °C.Surface mount Zener diode in SOD-123 package with 500 mW power dissipation, available with zener voltages from 2.4 V to 75 V and ±5% tolerance, featuring planar die construction and low forward voltage.Surface mount Zener diode in SOD-123 package with 500 mW power dissipation, available with Zener voltages from 2.4 V to 75 V and specified Zener impedance at various test currents. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22
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Shikues Semiconductor | Total power dissipation: max. 500 mW, small plastic package, tolerance ±5%, pinning: 1 Cathode, 2 Anode. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZT52C22
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Shandong Jingdao Microelectronics Co Ltd | Surface mount Zener diode in SOD-123 package with 500mW power dissipation, 2.0V to 39V reverse voltage range, and operating temperature from -55°C to +150°C.Surface Mount Zener Diodes BZT52C2V0 through BZT52C39 in SOD-123 package with 500mW power dissipation, reverse voltage range 2.0V to 39V, and operating temperature -55°C to +150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2C22 Price and Stock
KEMET Corporation C0402C221J2GACTUCAP CER 220PF 200V C0G/NP0 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C0402C221J2GACTU | Cut Tape | 43,036 | 1 |
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Buy Now | |||||
KEMET Corporation C0402C222J3JACTUCAP CER 2200PF 25V U2J 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C0402C222J3JACTU | Cut Tape | 10,390 | 1 |
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Buy Now | |||||
KEMET Corporation C0402C220J3GACAUTOCAP CER 22PF 25V C0G/NP0 0402 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C0402C220J3GACAUTO | Tape & Reel | 10,000 | 10,000 |
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Buy Now | |||||
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C0402C220J3GACAUTO | 23 Weeks | 10,000 |
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Get Quote | ||||||
Silicon Laboratories Inc EFR32BG22C224F512GM40-CRIC RF TXRX+MCU BLE 40QFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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EFR32BG22C224F512GM40-CR | Tape & Reel | 5,000 | 2,500 |
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Buy Now | |||||
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EFR32BG22C224F512GM40-CR | 1 |
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Buy Now | |||||||
Taiwan Semiconductor BZT52C22-G-RHGDIODE ZENER 22V 350MW SOD123 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BZT52C22-G-RHG | Tape & Reel | 3,000 | 3,000 |
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Buy Now | |||||
2C22 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2C2222AHV
Abstract: PHX24101
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Original |
2C2222AHVID 2C2222AHV 2C222 K145BP Tokyo141 PHX24101 | |
semicoa 2N2222A
Abstract: 2N2222 die CP2222A SD2222A 2c2222
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CP2222A 2C2222AKV 2N2219A 2N2222A MIL-PRF-19500L/255 MIL-PRF-19500L 2N2222A, 2N2222, 2N2219, semicoa 2N2222A 2N2222 die CP2222A SD2222A 2c2222 | |
2n2846
Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
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OCR Scan |
DMB101 2C2222A 2N696* 2N697 2N731 2N956 2N1420* 2N1613 2N1711 2N1959* 2n2846 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola MPS8092 2N4401 die 2n3116 | |
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Contextual Info: p semrofl ¡J8BBBBB88& | M iwiHBBffi .rfHHHHHHHHMh. mssssP % » 1 1 I I ititn nnnn hhhhhhk-. ^88888 % # ><>niftBHhr 1 D a ta S h e e t No. C P 2 22 2 A $ id L SEMICONDUCTORS 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255 |
OCR Scan |
J8BBBBB88& 2N2219A 2N2222A 2C2222AKV MIL-PRF-19500L/255 2C2222AKV MIL-PRF-19500L | |
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Contextual Info: TTR-2C22/TTR-2C23 Connectorized VCSEL Light Source FEATURES: • Industry standard connector of metallic FC-type receptacle. • Pre-aligned for multi-mode fiber communication. • Copper leadframe, low dependence of thermal variation. • Suitable for 10/100 Mbps applications. |
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TTR-2C22/TTR-2C23 | |
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Contextual Info: 2C2222AHV Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.75 h(FE) Max. Current gain.325 |
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2C2222AHV | |
2N2540
Abstract: 2N2846 2n5219 MPSD05 2N1959 2n3299
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OCR Scan |
37T74 2C2222A DMB101 2N696* 2N697 2N731 2N1420* 2N1613 2N1711 2N1959* 2N2540 2N2846 2n5219 MPSD05 2N1959 2n3299 | |
IC 1943
Abstract: rca ic 2c22 victor amplifier Scans-0017382
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OCR Scan |
92C-6427 92c-6437 92c-6436 IC 1943 rca ic 2c22 victor amplifier Scans-0017382 | |
2N2222 chip
Abstract: 2N2219 transistor 2N2222 die 2C2222A 2n2222 similar 2n2222 2C2222A die 2N2222ACHIP 2N2222 NPN Transistor features 2N2222AUB
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2C2222A 2N2219, 2N2219A, 2N2222, 2N2222A 2C2222A 2N2222A, 2N2222 chip 2N2219 transistor 2N2222 die 2n2222 similar 2n2222 2C2222A die 2N2222ACHIP 2N2222 NPN Transistor features 2N2222AUB | |
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Contextual Info: p semcofl ¿888888888 |M iwiHBBffi itittnnnnn .rfHHHHHHHHMh. hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 m sssBP D a ta S h e e t No. 2 C 2 2 2 2 A $ id L SEMICONDUCTORS Generic Packaged Parts: Chip Type 2C2222A Geometry 0400 Polarity NPN 2N2219, 2N2219A, 2N2222, |
OCR Scan |
2C2222A 2N2219, 2N2219A, 2N2222, 2N2222A 2C2222A 2N2222A, | |
MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
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SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N | |
983-495 thermax
Abstract: bj3450 PL75C-201 m27500-22rc2s06 PL155AC-201 305-0042-1 EPD22030F M27500-26RC2S06 PL75MC ASNE 0094
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TEI-T24, 983-495 thermax bj3450 PL75C-201 m27500-22rc2s06 PL155AC-201 305-0042-1 EPD22030F M27500-26RC2S06 PL75MC ASNE 0094 | |
ML610Q407
Abstract: KDS 4B 12 MHZ crystal t3d7 diode ML610Q4 SCK032 5252 F 1009 "integrated circuit" OKI ML610Q407 ML61040 S1B10 3 pin preset resistor 10k
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FEUL610Q409-01 ML610Q407/ML610Q408/ML610Q409 768kHz: 768kHz 500kHz: ML610Q407/ML610Q408/ML610Q409 ML610Q407 KDS 4B 12 MHZ crystal t3d7 diode ML610Q4 SCK032 5252 F 1009 "integrated circuit" OKI ML610Q407 ML61040 S1B10 3 pin preset resistor 10k | |
NFC 63210
Abstract: fuse 32A 10x38 siemens siemens diazed gg vde 0636 iec 269 22x58 fuse fuse 1.25 A 10x38 500V 63210 neozed 100 microfarad 20v capacitor 22X58
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CB2258-1 CB2258-1N CB2258-2 CB2258-3 CB2258-3N NFC 63210 fuse 32A 10x38 siemens siemens diazed gg vde 0636 iec 269 22x58 fuse fuse 1.25 A 10x38 500V 63210 neozed 100 microfarad 20v capacitor 22X58 | |
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ad90747
Abstract: dwa 105 dwa 108 transistor EBC 3904 nte semiconductor replacement guide ADSP-BF535 AMS 1117 transistor Linear Applications Handbook National Semiconductor INFRARED laser ba 3906 electronic component
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ADSP-BF535 X16DE ad90747 dwa 105 dwa 108 transistor EBC 3904 nte semiconductor replacement guide AMS 1117 transistor Linear Applications Handbook National Semiconductor INFRARED laser ba 3906 electronic component | |
2N7058
Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
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VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066 | |
M51132L equivalent
Abstract: M51132L M51132 Mitsubishi M51132L log volume control pin M51132L7FP echo reverb ic M51132 FP ATT-00 2Z10
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OCR Scan |
M51132L7FP M51132 VCA777 jf10u 2Z10y M51132L equivalent M51132L Mitsubishi M51132L log volume control pin M51132L7FP echo reverb ic M51132 FP ATT-00 2Z10 | |
SFH 903
Abstract: 386d lcd power board schematic APS 252 H103A TCS 3414 SFH 291 386D pin configuration C5011-11 4312-020-36643 PAL 010a
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PHAST-12E TXC-06212 STS-12/12c 16-bit TXC-06212-MB SFH 903 386d lcd power board schematic APS 252 H103A TCS 3414 SFH 291 386D pin configuration C5011-11 4312-020-36643 PAL 010a | |
12F676
Abstract: 6B24 5B30
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5000VG 500ps 68-input Ea768 LC51024VG-75F484C) LC51024VG-10F484I) TN1000) 12F676 6B24 5B30 | |
ksd 9700
Abstract: 9F56 5A0B 579a CXD2724Q 7AA4 diode 36b3 e32f CXD2724AQ-1 F32D
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CXD2724AQ-1 CXD2724AQ-1 80PIN QFP-80P-L01 QFP080-P-1420 42/COPPER ksd 9700 9F56 5A0B 579a CXD2724Q 7AA4 diode 36b3 e32f F32D | |
C828 transistor
Abstract: c828 transistor datasheet c828 ksd 9700 transistor c828 philips sq10 capacitor 1e76 20C3 2597H 953B
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CXD2721Q-1 CXD2721Q-1 1000p 100PIN QFP100-P-1420-A QFP-100P-L01 C828 transistor c828 transistor datasheet c828 ksd 9700 transistor c828 philips sq10 capacitor 1e76 20C3 2597H 953B | |
PIR 203B
Abstract: 4312 020 36643 lcd power board schematic hp 1502 lcd power board schematic APS 254 TCS 3414 MOTOROLA SOC 124A lcd power board schematic APS 252 ISO13239 h19 0549 9 ADM 3053
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PHAST-12 TXC-06112 OC-12/OC-12c/ OC-12/STM-4 OC-48/STM-16 STS-12c/STM-4c TXC-06112-MB PIR 203B 4312 020 36643 lcd power board schematic hp 1502 lcd power board schematic APS 254 TCS 3414 MOTOROLA SOC 124A lcd power board schematic APS 252 ISO13239 h19 0549 9 ADM 3053 | |
characteristics of twisted pair cable
Abstract: characteristics of shield twisted pair cable 558AFS UL-1666 4C18 658AFS 558af
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558AFS characteristics of twisted pair cable characteristics of shield twisted pair cable UL-1666 4C18 658AFS 558af | |
2c14hContextual Info: Datasheet R8C/34P Group, R8C/34R Group RENESAS MCU 1. R01DS0027EJ0100 Rev.1.00 Mar 30, 2012 Overview 1.1 Features The R8C/34P Group, R8C/34R Group of single-chip MCUs incorporates the R8C CPU core, employing sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, and it is capable of |
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R8C/34P R8C/34R R01DS0027EJ0100 2c14h | |