2SK1832 Search Results

k1832

Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
Contextual Info: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2

Hitachi DSA002748

Contextual Info: 2SK1831, 2SK1832 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline

Contextual Info: 2SK1831, 2SK1832 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

k1832

Abstract: 2SK1157 2SK1158 2SK1831 2SK1832 K1831 DSA003639
Contextual Info: 2SK1831, 2SK1832 Silicon N-Channel MOS FET ADE-208-1324 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter

k1832

Abstract: 2SK1157 2SK1158 2SK1831 2SK1832 K1831 Hitachi DSA00395
Contextual Info: 2SK1831, 2SK1832 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PFM

2SK1832

Abstract: 2SK1832-E PRSS0003ZA-A
Contextual Info: 2SK1832 Silicon N Channel MOS FET REJ03G0977-0200 Previous: ADE-208-1324 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter

Contextual Info: 2SK1832 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)30 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)

2SK1796

Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
Contextual Info: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2SK1778

Abstract: 2SK1776 peh 165 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167
Contextual Info: 11 HITACHI Table 7 : DIII-H Series Typical Characteristics Cont'd Package r I L Type Number VDSS VGSS V (V) 250 r •1 r TO-3P TO-3P-FM 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK 1170 2SK1515 2SK1516

2SK1161

Abstract: 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1401 2SK1401A
Contextual Info: HITACHI 11 Table 7: DIII-H Series Typical Characteristics Cont'd Package r I L Electrical Characteristics typ. Absolute Maximum Ratings Type Number VDSS VGSS (V) (V) 250 r •1 r 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167

2SK1161

Abstract: 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1401 2SK1401A
Contextual Info: 11 HITACHI Table 7: DIII-H Series Typical Characteristics Cont'd Package r I L Electrical Characteristics typ. Absolute Maximum Ratings Type Number VDSS VGSS (V) (V) 250 r •1 r 2SK1671 2SK1401 2SK1401A 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

hitachi mosfet audio

Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Contextual Info: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole