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    2SK11 Search Results

    2SK11 Datasheets (500)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK11
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 40.72KB 1
    2SK11
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.93KB 1
    2SK11
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 43.47KB 1
    2SK11
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 111.2KB 1
    2SK11
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.51KB 1
    2SK11
    Unknown FET Data Book Scan PDF 102.32KB 2
    2SK11
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 155.95KB 1
    2SK11
    National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF 83.42KB 1
    2SK11
    Toshiba (2SK11x) N-CHANNEL JFET TRANSISTOR Scan PDF 90.58KB 1
    2SK11
    Toshiba Japanese Transistor Data Book Scan PDF 403.06KB 11
    2SK11/0
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 83.51KB 1
    2SK110
    Unknown FET Data Book Scan PDF 96.17KB 2
    2SK1100
    Unknown FET Data Book Scan PDF 106.4KB 2
    2SK1101
    Collmer Semiconductor MOSFET Transistors Scan PDF 633.86KB 5
    2SK1101
    Unknown N-CHANNEL SILICON POWER MOS-FET Scan PDF 172.15KB 4
    2SK1101
    Unknown FET Data Book Scan PDF 106.4KB 2
    2SK1101-01M
    Collmer Semiconductor FAP-II Series / FAP-IIIA Series MOSFETS Scan PDF 92.67KB 1
    2SK1101-01M
    Fuji Electric N-CHANNEL SILICON POWER MOS-FET Scan PDF 137.04KB 3
    2SK1101-01MR
    Fuji Electric N-channel Silicon Power MOSFET Scan PDF 172.15KB 4
    2SK1101MR
    Unknown N-CHANNEL SILICON POWER MOS-FET Scan PDF 172.16KB 4
    ...
    SF Impression Pixel

    2SK11 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation 2SK1133(0)-T1B-A

    SWITCHING N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1133(0)-T1B-A 8,851 1,851
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.18
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    Rochester Electronics 2SK1133(0)-T1B-A 8,851 1
    • 1 -
    • 10 -
    • 100 $0.20
    • 1000 $0.16
    • 10000 $0.14
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    Renesas Electronics Corporation 2SK1160-E

    Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1160-E 716 114
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.95
    • 10000 $2.77
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    Rochester Electronics 2SK1160-E 716 1
    • 1 -
    • 10 -
    • 100 $2.64
    • 1000 $2.36
    • 10000 $2.22
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    Renesas Electronics Corporation 2SK1168-E

    Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1168-E 513 32
    • 1 -
    • 10 -
    • 100 $11.31
    • 1000 $10.13
    • 10000 $9.53
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    Rochester Electronics 2SK1168-E 513 1
    • 1 -
    • 10 -
    • 100 $9.05
    • 1000 $8.10
    • 10000 $7.62
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    Renesas Electronics Corporation 2SK1154-E

    Trans MOSFET N-CH Si 500V 3A 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1154-E 460 188
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.79
    • 10000 $1.68
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    Rochester Electronics 2SK1154-E 460 1
    • 1 -
    • 10 -
    • 100 $1.60
    • 1000 $1.43
    • 10000 $1.34
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    Renesas Electronics Corporation 2SK1155(E)

    Trans MOSFET N-CH Si 450V 5A 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK1155(E) 394 188
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.79
    • 10000 $1.68
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    2SK11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sj239

    Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
    Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]


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    2sk11122sk17192sj2392sk2030+122sk1079te12l2sk10782sj2382sk11182sj239lb2sk1717k11192sk13802sk9452sk1913t0220fl PDF

    transistor 2SK1120

    Abstract: CL226 2SK1120
    Contextual Info: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance


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    2sk1120--300natransistor 2sk1120cl226 PDF

    nsi 60 jg

    Contextual Info: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS U n it in mm


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    2sk1119300/uansi 60 jg PDF

    2SK1011

    Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
    Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M


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    2sk1221-01t02202sk1917-01mt0220f15+82sk1007-012sk1009-012sk1011-012sk1101-01m2sk10112sk1013-012sk1222-012sk1211 PDF

    2SK117

    Abstract: 2SK117 gr
    Contextual Info: T O S H IB A 2SK117 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 17 LOW NOISE AUDIO AM PLIFIER APPLICATIONS U nit in mm . 5.1 MAX. • High |Yfe| : IYfs| = 15mS Typ. (VDS = 10V, v Gs = o) • High Breakdown Voltage 0-45 : V g d S = - 50V


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    2sk1172sk117 gr PDF

    k1113

    Abstract: 2SK111
    Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-7r-MOSin 2SK1113 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS Unit in mm 6.8 MAX. . 3 , 5.2±0.2 FEATURES : Í V


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    2sk1113100ua20kflk1113+12sk111 PDF

    A2149

    Abstract: cnc schematic 2SK1101-01M 2SK series 3dd4 A2148 6aj5
    Contextual Info: 2SK1101-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features 'H ig h speed sw itching »Low o n-resistance »No secondary b reakdow n • Low driving p o w er ►High voltage


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    2sk1101-01msc-670d030dtia2-150+6a2149cnc schematic2sk series3dd4a21486aj5 PDF

    Contextual Info: Transistors IC SMD Type Type SMD Product specification 2SK1152S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switching regulator and DC-DC converter 2.3 +0.1 0.60-0.1 3.80


    Original
    2sk1152so-252 PDF

    2SK1104

    Abstract: 2SJ0164 2SJ164
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0164 (2SJ164) Silicon P-channel junction FET For switching circuits Complementary to 2SK1104 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


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    2002/95/ec2sj01642sj1642sk1104 PDF

    2SK1166

    Abstract: 2SK1165
    Contextual Info: 2SK1165, 2SK1166 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1


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    2sk11652sk1166 PDF

    2SK1159

    Abstract: 2SK1160
    Contextual Info: 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application TO–220AB High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver


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    2sk11592sk1160220ab PDF

    2SK1185

    Abstract: FM20
    Contextual Info: 2SK1185 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics (Ta = 25ºC) Ratings typ Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ±500 nA VGS = ±20V ID ±5 A I DSS 250 µA VDS = 100V, VGS = 0V


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    2sk1185fm20 PDF

    2SK1167

    Abstract: 2SK1168
    Contextual Info: 2SK1167, 2SK1168 Silicon N-Channel MOS FET Application TO–3P High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter 2 1


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    2sk11672sk1168 PDF

    2SK1181

    Contextual Info: 2SK1181 External dimensions 2 . FM100 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 500 V V(BR) DSS VGSS ±20 V I GSS ID ±13 A I DSS A VTH 2.0 8.5 ±52 (Tch ID (pulse) 150ºC) min 500 I D = 250µA, VGS = 0V


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    2sk1181fm100 PDF

    SLA5038

    Abstract: 2SK1190 SLA5015 2SK1192 SLA5013 2SK1180 2SK1191 SLA5012 SMA5106 2SK2848
    Contextual Info: 3 Power MOSFETs 3-1. MOSFETs 3-2. MOSFET Arrays 25 3-1. MOSFETs Nch Absolute Maximum Ratings Parameter Electrical Characteristics Ta = 25°C VDSS ID PD (Tc = 25°C) (V) (A) (W) (mJ) 2SK1188 10.0 25 2.1 0.200 300 2SK1189 15.0 30 6.2 0.100 640 Type No. * 2SK2419


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    2sk11882sk11892sk24192sk1190+132sk24202sk11912sk24212sk11922sk17122sk1185sla5038sla5015sla50132sk1180sla5012sma51062sk2848 PDF

    Contextual Info: 2SK1151 L (S), 2SK1152(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter


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    2sk11512sk1152 PDF

    Contextual Info: 2SK1101-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S I Outline Drawings • Features • High speed sw itching • Low o n-resistance • N o secondary breakdow n • Low driving p o w er • High voltage • V gss = ± 3 0 V G uarantee


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    2sk1101-01m1101-01m PDF

    condenser microphone 20hz

    Abstract: 2SK118
    Contextual Info: TOSHIBA 2SK118 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2 S K 1 18 Unit in mm GENERAL PURPOSE A N D IM PEDANCE CONVERTER A N D CONDENSER MICROPHONE APPLICATIONS 4.2 MAX. • • • High Breakdown Voltage High Input Impedance Low Noise


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    2sk118100k0120hz55max+1condenser microphone 20hz PDF

    TH12E

    Abstract: 2SK1123 MEI-1202 TEA-1035 esio Nec AC 160
    Contextual Info: DATA SHEET NEC 1N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1123 À SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION 2SK1123 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance


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    2sk1123iei-1209th12emei-1202+3tea-1035esionec ac 160 PDF

    Contextual Info: 2SK1163, 2SK1164 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


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    2sk11632sk11642sk11592sk1160 PDF

    Contextual Info: 2SK1157, 2SK1158 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver


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    2sk11572sk1158 PDF

    Contextual Info: 2SK1167, 2SK1168 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter


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    2sk11672sk1168 PDF

    2SK1122

    Abstract: TEA-1035 MEI-1202 tf155
    Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ÆÊ^BBS. NEC MOS FIELD EFFECT POWER TRANSISTOR 2SK1122 SWITCHING N-CHANIMEL POWER MOS FET


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    2sk1122iei-1209tea-1035mei-1202+1tf155 PDF

    2SK1186

    Abstract: FM20
    Contextual Info: 2SK1186 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS VGSS ±20 V I GSS ID ±9 A I DSS A VTH 2.0 W Re (yfs) 2.4 ±36 (Tch ID (pulse) 150ºC) 30 (Tc = 25ºC)


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    2sk1186fm20 PDF