2SJ567 Search Results

Contextual Info: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)

2SJ567

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ567 Industrial Applications Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

2SJ567

Abstract: j567
Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type -MOSV 2SJ567 Switching Applications Unit: mm 1.5 ± 0.2 (typ.) 5.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 5.2 ± 0.2 1.2 MAX. • 6.5 ± 0.2 • High forward transfer admittance: |Yfs| = 2.0 S (typ.)

2SJ567

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)

2SJ567

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)

2SJ567

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) •

2SJ567

Abstract: j567
Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSV 2SJ567 Industrial Applications Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

2SJ567

Contextual Info: 2SJ567 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ567 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 • オン抵抗が低い。

2SJ567

Contextual Info: 2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type π-MOSV 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.)

2SJ567

Abstract: TR2045
Contextual Info: 2SJ567 東芝電界効果トランジスタ シリコンPチャネルMOS形 π-MOSV 2SJ567 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 単位: mm 1.5 ± 0.2 6.5 ± 0.2 5.2 ± 0.2 漏れ電流が低い。

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SK3566 equivalent

Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

toshiba laptop charging CIRCUIT diagram

Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
Contextual Info: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5