2SD261 Search Results

2SB1676

Abstract: 2SD2618 doide base, collector, emitter
Contextual Info: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector

2SB1674

Abstract: 2SD2615
Contextual Info: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.

ic 3A hfe 500

Abstract: ib3a 2SD2616 2sd26
Contextual Info: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 ! Features 1) Low saturation voltage, typically VcE(sat) = -0.3V at Ic / Ib=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) I Absolute maximum ratings (Ta=25°C) S ym bol Lim its

2SD2616

Contextual Info: 2SD2616 Transisitors Power Transistor 100V, 5A 2SD2616 !Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB=3A / 0.3A. 2) Excellent hFE current characteristics. 3) Pc=30W. (Tc=25°C) !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage

2SD2614

Abstract: transistor collector diode protection TO-220FN diode zener 40v OA 70 diode 2sd26
Contextual Info: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 •Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.

2SB1672

Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 !Features 1) Low saturation voltage, typically VCE(sat) = 0.3V at IC / IB =4 / 0.4A. 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. 'c PD (W) (A) 6Tc=25°t ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SD261 40 20 5 0.5 2SD468 25 20 5 0.9 2SD468B 25 20 5 2SD46BC

2SB1676

Abstract: 2SD2618 2sd26
Contextual Info: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (-80V, -4A) 2SB1676 •External dimensions (Units: mm) •Features 1) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.

2SD2615

Abstract: 2SB1674
Contextual Info: 2SD2615 Transistors_ Power Transistor 120V, 6A 2SD2615 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. •Circuit diagram 3) Built-in damper diode. 4) Complements the 2SB1674.

2SB1676

Abstract: 2SD2618
Contextual Info: 2SB1676 Transistors Medium Power Transistor Motor, Relay drive (−80V, −4A) 2SB1676 !External dimensions (Units : mm) !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2618.

2SB1674

Abstract: 2SD2615 transistor 120v
Contextual Info: 2SD2615 Transistors Power Transistor 120V, 6A 2SD2615 !Circuit diagram !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1674. C B R1 R2 E R1 5.0kΩ

2SB1674

Abstract: 2SD2615 transistor 120v
Contextual Info: 2SB1674 Transistors Power Transistor −120V, −6A 2SB1674 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.

TO-220FN

Abstract: 2SB1674 2SD2615 2sd26
Contextual Info: 2SB1674 Transistors Power Transistor -120V, -6A 2SB1674 •External dimensions (Units: mm) •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2615.

Contextual Info: 2SD2614 Transistors For Motor / Relay drive 60±10V, 5A 2SD2614 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN zApplications Solenoid drive 8.0 1.2 5.0 15.0 2.8 1.3 0.8 (1)Base 2.54 (2)Collector

LT 672

Abstract: 2SB1672 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1 ) Low saturation voltage, typically Versai) = 0.3V at le / 2) Excellent DC current gain characteristics. Ib =4 / Q.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

2SD2618

Abstract: 2SB1676
Contextual Info: 2SD2618 Transistors_ Power Transistor 80V, 4A 2SD2618 •Circuit diagram • Features 1 ) Darlington connection for a high hre. 2) Built-in resistor between base and emitter. 3) Built-in damper ddde. 4) Complements the 2SB1676.

2SB1672

Abstract: 2SD2611
Contextual Info: 2SD2611 Transistors Power Transistor 80V, 7A 2SD2611 • Features 1) Low saturation voltage, typically Vc^sat) = 0.3V at le / 2) Excellent DC cument gain characteristics. Ib =4 / 0.4A. 3) Pc = 30W (Te = 25°C) 4) Wide SOA (safe operating area). 5) Complements the 2SB1672.

2SD2614

Contextual Info: 2SD2614 Transistors Medium Power Transistor Motor, Relay drive (60±10V, 5A) 2SD2614 !Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD468C

Abstract: 2SD786R BC169C BC170 2SD545E 2SD545F BC169C transistors 2SD786 2SD261 2SD468
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vcbo (V) Min V C E0 ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25°t @ lc & (mA) 'cBO V CB 'c e s v ce (UA) Max § (V) (UA) Max 0 (V )

2SD261

Abstract: 2SA643 P185 transistor 2sa643 transistor 2sd261 BA RV 251C S6095
Contextual Info: 2SA643 2SA643 PNP x U S IL IC O N E P IT A X IA L T R A N S IS T O R Frequency Pow er A m p lifie r 1# /F E A T U R E S W E I/P A C K A G E DIMENSIONS Unit-.mm S u ita b le f o r aud io p o w er ou tp u t a p p lica tio n s. • a. 2. OW g S S r i i -5 r i: # T ' i -5»

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,