2SD1506
Abstract: 2SB1065
Contextual Info: SavantIC Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING
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2sd1506o-1262sb1065 |
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2sd1503
Abstract: 2SD1506
Contextual Info: ROHM CO 40E LTD 7 a 2 â cn ci D ODDSÔÔT 1 BRHN 2SD1506 h 7 > y ^ $ / T ransistors -7 ^ 3 3 - 0 7 2SD1503 I N P y ' J - 1> b7 > y Z $ N Freq. P ow er Amp. Epitaxial Planar NPN Silicon Transistor • ÿfïïi'Î&IS/Dimensions Unit : mm
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2sd15062sd15032sb1065 |
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2sc4137
Abstract: TO126FP 2SB1423 2SB1311 2SD1379 2S02166 2SA1775 to-126fp 2SB1086A 2SB1007
Contextual Info: ROHM CO MOE LT» TñSñW ]> G0035ñb 2 IRHM 1 Irl 7=33- 0 } • TO-126, TO-126FP Types Type TO-126 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A 2SD1378 2SD1380 2SD1382 2SD1506 2SD1563 2SD1563A 2SB1423 2SD2147 2SC3272 — — 2SB1008 2SB1272 2SD1379 2SD1637 2SD1638
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7fi20wo-126o-126fpjo-126fp+122sb10072sb13092sb10092sc4137to126fp2sb14232sb13112sd13792s021662sa1775to-126fp2sb1086a
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2SB1065
Abstract: 2SD1506
Contextual Info: SavantIC Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SD1506 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING
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2sb1065o-1262sd1506 |
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2SB1065
Abstract: 2SD1506
Contextual Info: Inchange Semiconductor Product Specification 2SB1065 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1506 ・Low collector saturation voltage APPLICATIONS ・For use in low frequency power amplifier applications
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2sb1065o-1262sd1506 |
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2SD1506
Abstract: 2SB1065
Contextual Info: Inchange Semiconductor Product Specification 2SD1506 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB1065 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING
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2sd1506o-1262sb1065 |
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2SD1491
Abstract: 2SD1510 TO-22OAB0 2SD1533 2SD1494 2SD1496 2SD1497 2SD1499 2SD1500 2SD1502
Contextual Info: - 252 - M % Ta=25t ,*Ep(äTc=25t;) m fr Vr. Ä Vi"BO V q EO IcCDC) (V) (V) (A) Pc. Pc* CW) (W) 2SD1497 am B iL B iL B iL 2SD1499 föT PA PSW 150 100 10 LF PA/LS PSW 300 300 0.3 1.5 2SD1504 B% B aL LF A/Mut 30 15 0.5 0.3 2SD1505 D —A LF PA 60 50 2SD1506
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2sd14912sd14942sd14962sd1497+92sd14992sd15002sd15022-21f1a2sd15252sd15262sd1510to-22oab02sd1533
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2SD1506
Contextual Info: h /Transistors 2SD1506 I tf^ v W l^ -^ N P N v ' U > b 7 > y Epitaxial Planar NPN Silicon Transistor 1Sü)J5^^Jiill iffl/L o w Freq. Power Amp. 2 S D 1 506 • Z f W f i ' ^ ä l i l / ' D i m e n s i o n s U n it : mm) 1) VcE(sat) V cE (sa t)= 0.5V (T y p .)
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2sd1506symbol90 |
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2SB1065
Contextual Info: h 7 > y X ^ t /Transistors 2SB1065 PNP by>v*$ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • • W f iT t ii H / D i m e n s io n s U n it : mm 1) VCE ( sat]=—0-5V (Typ.) at Ic / I b = - 2 A / - 0 . 2 A 2) T'tbZo 3) 2SD1506 4) jf tf & fl'v <£>$!#
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2sb10652sd1506 |
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2SB1065
Abstract: 2SD1506
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1065 DESCRIPTION •·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -2A ·Wide Area of Safe Operation ·Complement to Type 2SD1506 APPLICATIONS ·Designed for low frequency power amplifier applications.
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2sb10652sd1506 |
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2SB1065
Abstract: 2SD1506
Contextual Info: JMnic Product Specification 2SB1065 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1506 ・Low collector saturation voltage APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION
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2sb1065o-1262sd1506 |
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Contextual Info: h 7 > V ^ £ /Transistors 2SD1506 2SD1506 7 V -/B N P N y ' J i > h ? > y * $ 1SUl§}j£it:£j*^llif fl/L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ J fJ ^ iilO /D im e n s io n s U n it: mm V ;V vHt 1) V CE ( s a i) = 0 .5V (T yp.)
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2sd15062sb1065 |
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E05A
Abstract: 2SD1506 2SB1065
Contextual Info: h7 > v ^ £ /Transistors 2SD1506 2SD1506 NPN v'J =i> Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor Sfr>JViVvIl-7- • W F ^ Ä Ü I/D im e n s io n s Unit : mm 1) V c E (s a t)= 0 .5 V (T y p .) (at Ic / I b = 2A /0.2A ) 2) A S O ^ l £ < « * ( c S S t ' o
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2sd15062sb1065o-126e05a |
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SC783
Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
Contextual Info: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421
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2sd8192sd6002sc34212sd1378+112sd137s2sd15632sc7832sc22902sc11742sc12752sd15772sc11752sc 11772sc11672sc2329
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2sC2335
Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI
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2sc30402sc25552sc33652sc3277+132sc26502sc27402sc27922sc31512sc31532sc37832sc23352sc10092sc2534toshiba 28032sc28052sc1817a2sc2895
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te 1819
Abstract: 2SD1878 2SC4211 2SD1649 2sd1856 1815 2SC4723 2sd1707 2SD1929 2SC4331
Contextual Info: - a ¡g tt £ Manuf. Type So. H £ SANVO 2SD1667 IE TOSHIBA Q m jtec 2SD1406 ÍL HITACHI Ü ± il FUJITSU T MATSUSHITA 2SD2107 2SD1267 2SD2105 2SD1445A o MITSUBISHI 251 A ROHM 2SÜ1778 2SD 1813 ¡L 2SD 1814 S AI 2SD 1815 J = ft 2SD 1816 / = n 2SD 1817 X =
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2sd18132sd18142sd16672sd1406+152sd21072sd21052sd12672sd1445a2sd12502sc4331te 18192sd18782sc42112sd16492sd185618152sc47232sd17072sd1929
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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2sb11862sb1186a2sa13042sa1306+162sa13052sb12742sb10152sb11332sb12872sb1185rtip144crtin141crtin141s2sd947 equivalent2sd612kequivalent of transistor 2sa1115rtin241crtip2412sd880 equivalentrtin140c
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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stvdst-01cat22stk411-230estk411-220e+8stk442-130pal005aupc2581vfn1016strg6153rsn313h25stk407-070bmcz3001d
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2SD947F
Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Contextual Info: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126
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o-126o-126fpsc-59t0-126fp+112sb10072sb889f2sd947f2sc41372sa1775 transistor2sb15162sd13792sb10092sb10652sb10862sb1086a
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C2021M
Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)
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2sc2021ljne2sb8212sa937aln\2sc2021ln+162sb12762021m2sa937am2sb7372sd7862sa1137c2021mb1568mosfet ftr 032sc1b152sa1904mosfet ftr 03-e2sc2021e2sc1740 transistor2sk22952s0240
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2SB1065
Abstract: 2SD1506
Contextual Info: h 7 > y X $ /Transistors 2SB1065 T y Z tty y J V fls —M PNP v ' j 3 > k 7 > y Z $ Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • W g ^ iilH /D in ie n s io n s Unit : mm • M t 1) V ce ( s a t ) = —0 .5 V (Typ.) t & ' o at Ic / I b = - 2 A / —0.2A
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2sb10652sd1506o-126 |
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Nec K 872
Abstract: 2SD887 2sc1162 2SD883 2sc2335 2SD877 2SD756 2sd756 e 2sc3114 2SC3247
Contextual Info: - s € tt « Manuf. T y p e No. H Ä SANYO S T O SHIBA S m NEC ÍI HITACHI S ± iS FUJITSU fâ T MATSUS H I T A 2 S D 860 ✓' ta T 2SC25S2 2SD 860A te T 2SC2552 2SD 860B fâ T 2SC2552 2SD 861 «- te T 2SC2552 2SC3169 2SD 861A te T 2SC2552 2SC3169 2SD 861B
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2sd8602sd860a2sd860b2sd861+162sd861a2sd861b2sd8622sd8632sd8642sd865nec k 8722sd8872sc11622sd8832sc23352sd8772sd7562sd756 e2sc31142sc3247
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent
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