2SD1412 Search Results

D1412A

Abstract: 2SD1412A D1412
Contextual Info: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Maximum Ratings (Tc = 25°C) Characteristics Symbol

Contextual Info: TOSHIBA 2SD1412A 2 S D 1 4 1 2A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS PO W ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 ^3.2 ±0.2 2.7Ì0.2 Low Saturation Voltage : V^E s a t = 0-4V (Max.) at I0 = 4A

2SB1019

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1019 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX, POWER AMPLIFIER APPLICATIONS. FEATURES: . Low Collector Saturation Voltage : VCE sat =-0.4V(Max.) at I c =-4A . Complementary to 2SD1412

2SD1412

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1412 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1Q3MAX. POWER AMPLIFIER APPLICATIONS. 03.2±Q2 FEATURES: . Low Saturation Voltage : VcE sat = 0 •4 V ( M a x .) at Ic=4A . Complementary to 2SB1019

D1412A

Abstract: 2SD1412A d1412
Contextual Info: 2SD1412A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1412A High-Current Switching Applications Power Amplifier Applications • Unit: mm Low saturation voltage: VCE sat = 0.4 V (max) at IC = 4 A Absolute Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: TOSHIBA nnuD A T O SH IBA TRANSISTOR 2SD1412A SILICON PNP TRIPLE DIFFUSED TYPE mm mmr u m m m HIGH CURRENT SW ITCHING APPLICATIONS POW ER AM PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm £Y J'L .2 ±0 .2 10 ± 0.3 Low Saturation Voltage : V ç e §at = 0.4V (Max.) at Iç = 4A

2SD1412A

Abstract: laf 001
Contextual Info: TO SH IBA 2SD1412A TOSHIBA TRANSISTOR 2 S SILICON NPN TRIPLE DIFFUSED TYPE D 1 4 1 2 A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS r 10 ±0.3 ^3.2 ± 0.2 -5 y < of ml ÍY^ • 1.1 MAXIMUM RATINGS Tc = 25°C CHARACTERISTIC

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

sc 4145

Abstract: NEC 4164 2SC4116 2SC4667 2SC4145 2SC4211 c3503 2sc4153 2SC3170 rohm 4157
Contextual Info: - m « M an u f. u— A m ED 2SC 4148 / 2SC 4149 2SC 4150 S 2SC345Ö n— A 2SC35Ö3 ifim T C 2SC3254 2SC3255 2SD1212 S t^ t c 2SC 4 1 5 1 X 2SC 4 1 5 3 / 2SC 4154 v-y'ry h m z m 4155 2SC 4157 —' 2SC 4 1 5 9 J M S = 2SC 4160 2SC 4 1 6 1 2SC 4162 = Z ft ft

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2SD1460

Abstract: 2SD1477 2SD1473 2sd1467 2SD1422 2sd1425 2SB1029 2SD1466 2SD1058 2SD1407
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1401 1500 7 3.5A 80W(Tc=25ºC) 150 25 5 500 3* 120W 2SD1402

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Contextual Info: - 70 - m 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB975 2SB976 2SB977 2SB977A 2SB984 *± BIS töT föT HÄ an B föT fö~F töT BM 2SB985 2SB986 n Ta=25V.*EPteTc=25V £ £ VcBO Vceo Ic(DC) Pc (V) (V) <A> (HO Pc* m iCBO (max) (ub) VcB m (min) (V) & w

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.

BU108

Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS

BU108

Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A

transistor 3569

Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —

transistor MJ2501

Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc

automotive ignition tip162

Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —

BU108

Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc

2SC1419

Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.