2SC5322 Search Results

Contextual Info: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2i e|2 = 10 dB (f = 2 GHz) 1.2 ±0 .0 5 0.8 ± 0.05

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5322
Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)

2SC5322

Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r , i 0.8 ± 0 . 1, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain

2SC5322

Contextual Info: TO SH IBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.6 ± 0.2 Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : Ga = 10 dB (f = 2 GHz) ,0.8 ± 0.1,

Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ± 0 . 1, r— r - i Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain

Contextual Info: TOSHIBA TENTATIVE 2SC5322 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0.1 • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain l*- ^

2SC5322

Contextual Info: 2SC5322 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5322 ○ VHF~UHF 低雑音増幅用 単位: mm • 雑音特性が優れています。 : NF = 1.4dB f = 2 GHz • 高利得です。 : |S21e|2 = 10dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C)

2SC5322F

Contextual Info: TOSHIBA 2SC5322F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2i e|2= lOdB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O SH IB A 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 7 <; f 5 3 ? ? FT O V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4dB f=2GHz High Gain : |S2l e|2 = 10dB (f=2GHz) Unit in mm 1.2 ± 0.05 0.8 ± 0.05

2SC5322

Contextual Info: TO SH IBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.6 ± 0.2 Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : Ga = 10 dB (f = 2 GHz) ,0.8 ± 0.1,

Contextual Info: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v w f VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : jS2i ep= lOdB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2SC5322FT

Contextual Info: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2l e|2 = 10 dB (f = 2 GHz) MAXIMUM RATINGS ÍTa = 25°CÌ

Contextual Info: TOSHIBA TENTATIVE 2SC5322 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm V H F -U H F B AN D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain

Contextual Info: TOSHIBA TENTATIVE 2SC5322F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2i e|2= 10dB (f=2GHz) 1.6 ± 0.1 0.85 ±0.1 MAXIMUM RATINGS (Ta = 25°C)

2SC5322

Abstract: HN3C18FT
Contextual Info: T O S H IB A HN3C18FT TENTATIVE T O SH IBA TRANSISTO R SILICON NPN EPITAXIAL PLAN AR TYPE HN3C18FT Unit in mm V H F -U H F B A N D LO W NOISE AM PLIFIER APPLICATIO NS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

Contextual Info: TO SHIBA HN2C13FT TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 7 f 1 3 FT • ■ ■ m 'm mtr m m Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS 2.1 ± 0 .1 • TWO devices are built in to the super-thin and ultra super

Contextual Info: TO SHIBA HN3C18FT TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C18FT Unit in mm V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

N2C13

Abstract: 2SC5322 HN2C13FT
Contextual Info: TO SH IBA TENTATIVE HN2C13FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 3 FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • 2.1 ± 0.1 TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

2SC5322

Abstract: HN2C13FT
Contextual Info: T O S H IB A TENTATIVE HN2C13FT T O SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 3 FT Unit in mm V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243