2SC3795 Search Results

800V PNP

Abstract: 2SC3195 2SC3795A 2SC3795
Contextual Info: Power T ransistors 2SC3795, 2SC3795A 2SC3795, 2SC3795A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • High speed sw itching • High collector-base voltage V 03.1 ±0.1 • Absolute Maximum Ratings (T c= 2 5°C

Contextual Info: Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 16.7±0.3 7.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High-speed switching

2SC3795B

Contextual Info: SavantIC Semiconductor Product Specification 2SC3795B Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·Fast switching speed ·Low collector saturation voltage APPLICATIONS ·For high voltalge ,high-speed switching applications

2SC3795

Abstract: 2SC3795A
Contextual Info: Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 7.5±0.2 φ 3.1±0.1 nt in ue Pl pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo

2SC3795

Abstract: 2SC3795A 752S
Contextual Info: Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching • Features Parameter Symbol Collector to 2SC3795 base voltage 2SC3795A Collector to 2SC3795 Ratings 800 VCBO 800 V 900 500 V VEBO

2SC3795

Abstract: 2SC3795A
Contextual Info: Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 • High-speed switching • High collector to base voltage VCBO

2SC3795

Abstract: 2SC3795A
Contextual Info: Inchange Semiconductor Product Specification 2SC3795 2SC3795A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High breakdown voltage ・High speed switching ・Low collector saturation voltage APPLICATIONS ・For high breakdown voltate ,high-speed

2SC3795B

Abstract: uc 600
Contextual Info: Inchange Semiconductor Product Specification 2SC3795B Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・Fast switching speed ・Low collector saturation voltage APPLICATIONS ・For high voltalge ,high-speed switching applications

2SC3795

Abstract: 2SC3795A
Contextual Info: SavantIC Semiconductor Product Specification 2SC3795 2SC3795A Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For high breakdown voltate ,high-speed

Contextual Info: Power T ransistors 2SC3795, 2SC3795A 2SC3795, 2SC3795A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • • • • High speed switching High collector-base voltage V cbo Low collector-emitter saturation voltage (Vce <>«>)

2SC3795

Abstract: 2SC3795A
Contextual Info: Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 4.2±0.2 2.7±0.2 7.5±0.2 16.7±0.3 • High-speed switching • High collector to base voltage VCBO

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

2SC5283

Abstract: 2SC5157
Contextual Info: Transistors Selection Guide by Applications and Functions I Switching Power Transistors o > > Appli­ cation VcEO lc (V) (A) VcE(sat) (V) lc Package (No.) 1b (p s | (A) (mA) MT3 (D40) MT4 r 0 -220(a) TO-220F(a) TO-220E T0220D N Type (055) (D52) {041} (D59)

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC3824

Abstract: 2SC4359
Contextual Info: Transistors Selection Guide bv Applications and Functions • Switching Power Transistors Application Veso VcEO le (V ) (V ) (A ) 150/200/ 250 Switching sp eed switching 5 Packag e (N o.) tf le Ib (V) (A ) (mA) < 1.6 5 1(A) (/¿s) MT3 MT4 (D43) (D46) T0-220(a) TO-220F(a) TO-220E TO-220D

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440

2SC3119

Abstract: 2SC3790 2sc3807 B2C2C b2c2 25C3782 2SA1480 2sc3198 2sc3812 2SC3780
Contextual Info: - 172 - Ta=25tC, *EPÍáTc=25cC 33 2SC3779 S it S UHF LN H # 2SC3780 A VcBO V’cEO (V) (V) 20 Í C ( DC) (A) 12 0.1 m Pc Pc* I cbo , (W) (W) (max) ( t i A) 0.6 m ft Œ te (Ta=25°C) Miâtypfil] E VcB (V) 1 (min) (max) le/J e (A) y'cE (V) 12 40 200 (V)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773