2SA1480 Search Results

Contextual Info: Ordering number: EN 2254 2SA1480/2SC3790 PNP/NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications Features . High breakdown voltage VCE0^300V . Small reverse transfer capacitance and excellent high frequency chracteristic

2sc3790

Abstract: 2SA1480 ITR03783 ITR03784 ITR03785
Contextual Info: Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Package Dimensions unit:mm 2042B [2SA1480/2SC3790] 8.0 4.0 1.0 1.0 3.3 1.4 • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high

Contextual Info: 2SA1480 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)140 I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3790

Abstract: 2SA1480 ITR03783 ITR03784 ITR03785 ITR03786
Contextual Info: 注文コード No.N 2 2 5 4 2SA1480 / 2SC3790 No. N2254 20400 2SA1480 / 2SC3790 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイビデオ出力用 ・高耐圧である : VCEO ≧ 300V。

2SC3790

Abstract: d 2254 2SA1480
Contextual Info: Ordering number:EN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features • High breakdown voltage VCEO≥300V . · Small reverse transfer capacitance and excellent high frequency characteristic

transistor 2SB1142

Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
Contextual Info: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

vertical IC tv crt

Abstract: 2SC4566 2SA1751 2SC3790 2SA1352 2SA1380 2SA1381 2SA1875 2SC3416 2SC3502
Contextual Info: Continued fra.71 D.-ewouS oage Absolute maximum ratings Electrical characteristics Ta = 25 Package V tfiu VcEO (V ' (V) Vcao • (V) ; le (A) Pc (W) T, (C ) ICBO max @ Vcb f0 ,¡«Cl Ic b o max Vcb h fE @ Vce - lc tlFE Ci . *T Vce ■ lc Vce Ic tr Vce 2SC4827

SC3416

Abstract: tt2202 2SA1371 2SC3790 2SC4732 2SC5291 2SA1829 2SC2857 2SC4075 TD-220F
Contextual Info: SA$iYO Transistors for TV Display Video Output Us P c i t u r c s ^Excellent HP characteristic. * S m ll reverse tn n sfer capacitaac*. *C c«*lei*ntiry WP and NW type*. ♦ Adoption of MBIT, FB€T processes. ^Highly resistant to d ie le c tric breakdown.

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta • 251C ICBO max @ VCB VCBO VCEO VEBO (V) CO M le (A) PC (W) A 1CBO max <»A) VCB (V) hFE @ VCE ■ 1C f r s v c E ■ Ic ft tire VCE

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC5291

Abstract: 2SA1370 2SC3788
Contextual Info: S A T r a n s i s t o r s for TV D i s p l a y V i d e o O ut p u t W O Use F e a t u r e s * Excel lent HF characteristic. * Small reverse transfer capacitance. * Complementary PNP and NPN types. ♦ Adoption of MBIT.FBET processes. *Highly resistant to dielectric breakdown.

2SC3119

Abstract: 2SC3790 2sc3807 B2C2C b2c2 25C3782 2SA1480 2sc3198 2sc3812 2SC3780
Contextual Info: - 172 - Ta=25tC, *EPÍáTc=25cC 33 2SC3779 S it S UHF LN H # 2SC3780 A VcBO V’cEO (V) (V) 20 Í C ( DC) (A) 12 0.1 m Pc Pc* I cbo , (W) (W) (max) ( t i A) 0.6 m ft Œ te (Ta=25°C) Miâtypfil] E VcB (V) 1 (min) (max) le/J e (A) y'cE (V) 12 40 200 (V)

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc

vertical IC tv crt

Abstract: 2sc3503 2sc378s
Contextual Info: • SIUCON TRANSISTORS FOR TV/VTR USE TV/CRT DISPLAY APPLICATIONS I e New* {Classified by package and arranged in order of increasing Pp. Minus sign for PNP is omitted due to space limitations.) fol» Muuhr Applications Absolut« Maximum Ratings/T4 = 25t!

2sc5790

Abstract: 2SC3790 2SA1480
Contextual Info: Ordering number: EN 2254 No. 2254 I _ 2 S A 1 4 8 0 / 2 S C S 7 9 0 PNP/NPN E p i t a x i a l P l a n a r Type S ilicon Transistors H i g h - D e f i n i t i o n CRT D i s p l a y _ V i d e o O u t p u t A p p l i c a t i o n s Features

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

TRANSISTORS SANYO 2sc2621

Abstract: 2SA148 2sc3503 2sc3789 2sc2621
Contextual Info: SAfiYO Transistors for TV D i s p l a y V i d e o O u t p u t Use F e a t u r e s * Excellent HF characteristic. * Small reverse transfer capacitance. * Complementary PNP and NPN types. ♦ Adoption of MBIT, FBET processes. * Highly resistant to dielectric breakdown,

2SB612K

Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
Contextual Info: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]

2SA1467

Abstract: 2SA1462 2SA1466 2sc3736 2SA1460 2sc3788 2SC3790 2SA1444 2SA1450 2SC3739
Contextual Info: 36 - T a = 2 5 cC . % E P ( á T c = 2 5 ‘ C M % î± & m & VcBO VcEO (V) (V) I C (D C ) Pc P c* (W) (W) i io 'co :O - \llldA J (A) 2SA1444 BW. HS PSW -100 -60 - 15 2 2SA1450 H # LF A/PA/D 0 .6 i»h) 30 -10 I K tí tt v tlF »CB (V) (V) - 60 100 400 (Ta=25T)

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle