2SC299 Search Results

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2SC2999

Abstract: sanyo 2033 EN931D 2SC2999 transistor N3098HA 3107K
Contextual Info: Ordering number:EN931D NPN Epitaxial Planar Silicon Transistor 2SC2999 HF Amplifier Applications Features Package Dimensions • FBET series. · Very small-sized package permitting sets to be smallsized and slim. · High fT fT=750MHz typ. and small Cre (Cre=0.6pF typ).

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

2sc710

Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
Contextual Info: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-

2sc2888

Abstract: 2SC2926 2SC2166 2sc1047 2sc1907 2SC387A 2SD1270 2Sd917 2SC787 2sc2314
Contextual Info: - 96 - sa € * * * * * * Type No. 2SC 740 2SC 7 412SC 742 2SC 743 2SC 745 2SC 746 2SC 748 * 2SC 749 * 2SC 751 2SC 752 * 2SC 753 * 2SC 754 * 2SC 755 * 2SC 756A a € Manuf. z m SANYO # z m Z «±ii t±M «±S 2SC2183 S drài 2SC2999 2SC4455 s 0 s V — —

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906

bl-27 MHz

Abstract: k 2996 10ID 2SC2996
Contextual Info: 2SC2996 TOSHIBA TOSHIBA TRANSISTOR FM /AM, RF, MIX, LOCAL, IF SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2996 HIGH FREQUENCY AMPLIFIEP APPLICATIONS • • Unit in mm + 0.5 High Stability Oscillation Voltage On FM Local Oscillator Recommend FM/AM RF, MIX, Local and IF

T35W

Abstract: transistor BC 543 transistor Bc 542 transistor bc 207 npn ako 544 126 2SC2998 922B knitter 34
Contextual Info: SANYO SEMICONDUCTOR 2SC2998 CORP 1EE I D 1 7Ti707ti ~r-3s-i3> 2003A N P N Ep itaxial P la n a r S ilic o n T ra n sisto r High Speed Sw itching a _ i : _ 922B Features . Fast switching speed. . High breakdown voltage. Absolute Maxiaui Ratings at Ta:25°C

2SC2999

Abstract: N084 ITR05179 ITR05180 ITR05181 ITR05182 ITR05183
Contextual Info: 注文コード No. N 9 3 1 D 2SC2999 No. N 9 3 1 D 30600 ＊半導体ニューズ No.931C とさしかえてください。 2SC2999 特長 NPN エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 ・FBET シリーズ。

Contextual Info: 2SC2998 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)150m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC2999 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)10

Contextual Info: SILICON NPN EPITAXIAL T Y P E 2SC2996 F M /A M , RF, M IX , LOCAL, IF HIGH FREQUENCY AMPLIFIEP APPLICATIONS. FEATURES : • High Stability Oscillation Voltage On FM Local Oscillator. • Recommend FM/AM RF, MIX, Local and IF. M A X IM U M RATINGS <Ta = 2 5°C

2sc3055

Abstract: T03B 2SC3008-KA 2SC3030 2SC3008-MA 2SC2999 2SC3000 2SC3001 2SC3004 2SC3006
Contextual Info: - 142 - ili íS±¿ Ta=25cC, *EpíÍTc=25t¡ A7 -a f-L -a m iâ VCBO VcEO (V) (V) Ic(DC) (A) Pc* (W) (W) HF A 25 20 0.03 0.15 2SC3000 HF A 30 20 0.03 0.25 2SC3001 HF PA 20 2SC2999 2SC3004 BÍL 2SC3006 2SC3007 2SC3008-KA an 2SC30Û8-MA sm 2SC3011 2SC3012

10ID

Abstract: 2SC2995 P100 R6P-F
Contextual Info: 2SC2995 TO SH IBA TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2995 Unit in mm FM /A M RF, MIX, OSC, IF HIGH FREQUENCY A M PLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM/AM RF, MIX, OSC and IF.

10ID

Abstract: 2SC2996 RF POWER TRANSISTOR 100MHz
Contextual Info: TOSHIBA 2SC2996 T O S H IB A TR A N SISTO R SILICO N NPN EPITA X IA L TYPE PCT PROCESS 2SC2996 U nit in mm F M /A M , RF, M IX , LOCAL, IF + 0 .5 2 .5 -1 1 3 H IG H FR EQ U EN C Y A M P L IF IE P A P P L IC A T IO N S . + 0 .2 5 1 .5 -Q .l 5 I1 c5c5 + 1

2SC1313

Abstract: bc182c NPN 2sC1685 2SC3247K 2SC734GR 2SC1815LY 2SC1815L-G 2SC1815LBL 2SC1815L 2S01623
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number -5 10 15 20 25 -30 40 Indust Mexi ToshibaCorp Sanyo Elect Sanyo Elect Indust Mexi ToshibaCorp Sanyo Elect ToshibaCorp See Index See Index ~SC~~~I\ ~atsus!!~ta 2SC2998G 2SC3114 2S01623U 2S01835 NB012EL NB012EZ NB012FL

nec 500t

Abstract: 2SC2999D 2SC2999E 2sc922 2SC185 JE9016 MPS6539 JE9018 2SC1303 BF369
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO . 5 10 15 2N2884 2SC320 2SC922 2SC922 g~~~: 25 30 BF154 BF369 2SC269 BFY19 2SC302 2SC302 2SCl779 2SCl779 ~~g~~g~ 35 40 2SC2999C 2SC2999D 2SC2999E SE5052 BF209 MPS6539 BF206 TIS56 ~~;l37 45 50 2N5236

TO92S

Abstract: 2sc2999 transistor 123 transistor npn NPN Transistor 100A TO-92S 2SC2999 transistor
Contextual Info: 2SC2999 TO-92S Transistor NPN 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 123 Features — High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO

2SC2995

Abstract: 10ID
Contextual Info: 2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2995 FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications Unit: mm • High stability oscillation voltage on FM local oscillator. · Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta = 25°C)

transistor BA RW

Contextual Info: T O S H IB A 2SC2996 TOSHIBA TRANSISTOR n SILICON NPN EPITAXIAL TYPE PCT PROCESS r ? Q Q f i U nit in mm FM/AM, RF, MIX, LOCAL, IF + CL5 2 .5 -Q 3 HIGH FREQUENCY AM PLIFIEP APPLICATIONS. + 0 .2 5 1 .5 - a i 5 t— dd + 1 EE- FEATURES : m High Stability Oscillation Voltage On FM Local Oscillator.

2SC2995Y

Contextual Info: TOSHIBA 2SC2995 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ? < ; r 7 Q Q <5 Unit in mm F M / A M RF, M IX , OSC, IF HIGH FREQUENCY AMPLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM /AM RF, MIX, OSC and IF.

smd marking GY

Abstract: smd GY 2SC2996 marking "gr"
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2996 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Recommend FM/AM RF, MIX, local and IF. 1 0.55 High stability oscillation voltage on FM local oscillator. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SC2999 TRANSISTOR Plastic-Encapsulate Transistors NPN TO-92S FEATURES .High fT(fT=750MHZ typ) and small Cre (Cre=0.6pF typ) 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

5504S

Abstract: 10ID 2SC2995 P100 R6P-F toshiba p100
Contextual Info: 2SC2995 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2995 Unit in mm FM /AM RF, MIX, OSC, IF HIGH FREQUENCY AM PLIFIER APPLICATIONS. 4 .2 M A X . • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM/AM RF, MIX, OSC and IF.