2SC2960 Search Results

KT 829

Abstract: KT 829 b 2SC2960 sanyo 2033 2SA1481
Contextual Info: Ordering number:EN829I PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High breakdown voltage. unit:mm 2033 [2SA1481/2SC2960] B : Base C : Collector E : Emitter

2SC2960

Abstract: 829H 2SA1481 31M10
Contextual Info: 注文コード No.N 8 2 9 I 2SA1481 / 2SC2960 No. N 8 2 9 I 20400 半導体ニューズ No.829H とさしかえてください。 2SA1481 / 2SC2960 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用

KT 829

Abstract: 2SC2960 KT 829 b 2SA1481
Contextual Info: Ordering number:EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High breakdown voltage. unit:mm 2033 [2SA1481/2SC2960] B : Base C : Collector E : Emitter

Contextual Info: 2SC2960G Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)150m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)400 @I(C) (A) (Test Condition)10m

2sc1815

Abstract: 2SC710 2SC1359 2SC1856 2SC2058 2SC2068 2SC2960 2SC2060 2SC2497 2SC2008
Contextual Info: 80 - S € T y p e No. H € Manuf. W 2SC 147 V —— 2SC 149 s m 2SC 150 2SC 1 5 3 * * 2SC 154 H 02 2SC 154A en 2SC 1548 B $ SANYO S 2SC 146A ED 2SC 146 tt 3C S TOSHIBA m b NEC ÏL HITACHI 2SC2960 2SC1315 2SC1856 2SC2960 2SC1815 2SC1856 2SC2230 Ä ± Ä

kt 8295

Abstract: KT 829 2SC2960 2SA1481 ITR03804
Contextual Info: Ordering number:ENN829I PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · High breakdown voltage. unit:mm 2033A [2SA1481/2SC2960] 2.2 3.0 4.0 15.0 0.6 1.8

kw2j

Abstract: MARKING 2J0 2sc2960 a-y
Contextual Info: SAfÊYO H IG H -S P E E D SW IT C H IN G A P P L IC A T IO N S Siali Signal Transistors F e a t u r e s Case Outlines (unit¡an) SANYO :SMCP SANYO :MCP *High switching speed *High breakdown voltage * Low collector saturation voltage *Very small-sized package permitting a set to be made smaller

2SC2491

Abstract: 2SC319B 2SC748 2sc2550 2SC306 2SC1740 2sc2061 2SC2926 2SC1398 2SC1687
Contextual Info: 84 - S S! tt T y p e No. 2SC 292 « Manuf. = $ SANYO Ü S TOSHIBA t b B NEC ÍL HITACHI Ä ± iï FUJITSU fâ T MATSUSHITA 'J—— 2SC2497 2SC 293 ' J —— 2SC2497A 2SC 294 S S 2 SC2497A 2SC 295 a a S * h m MITSUBISHI □ — A ROHM 2 SC2497A 2SC 296 |_±iS

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

2SD424

Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
Contextual Info: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI

829H

Abstract: 2SA1481 SC2960 2SC2960 sa ic E200I
Contextual Info: Ordering num ber: EN 829H N0.829H 2 S A 1 4 8 1 /2 S C 2 9 6 0 PNP/ NPN Epitaxial Planar Silicon Transistors SA\YO i High-Speed Switching Applications Features . Fast switching speed . High breakdown voltage : 2SA1481 Absolute Maximum Ratings at Ta=25°C

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

2SA1047

Contextual Info: SA%VO CP Chip Pack Transistors We have a full lineup of Chip Pack (package: CP) transistors that are very small-sized, can be applied to various uses, and excel in reliability, quality stability. They are the same except collector dissipation (PC max), as those placed in the

2SC900

Abstract: LG 631 2sc2603 2SC1740 2SC2999 2SC1628 2SC2852 2SC2926 2SC2888 2SC460
Contextual Info: - 92 - m « a Type No. * * 2SC 588 * « Manuf. 2SC 587A n h SANYO % TOSHIBA 2SC 589 2SC1628 * 2SC 591 ^ i 0 - g t L ' ,S± i S 2SC1625 * 2SC 592 E± a 2SC 596 / S B - 2SC 599 (H) .E £ 2SD313 ft 2SC2999 (*± ü) * 2SC 605 In 2SC 606 5 m 2SC 613 h a

2SC1815

Abstract: 2SC410 2sc1856 2sc1815 type 2sc2061 2SC387A 2SC1359 2SC2410 2SC454 2SC458
Contextual Info: - m * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * € tt Manuf. Type No. V -2SC 178 2SC 179 B ÍL 2SC 180 B ÍL 2SC 181 0 ÍL 2SC 182 ^ b m 2SC 183 > b m 2SC 183A Q s 2SC 184 / a m 2SC 185 ¥ b m 2SC 186 ^ t t d r i l 2SC 187 Ä ± ii 2SC 191

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SC2320

Abstract: 2SC2719 2SC984A 2SC1010 2sc372 2SD300 2SC1000 2sd1111 Toshiba 2SC995 2SC4641
Contextual Info: - s « tt T y p e No. 2SC 978 h m 2 S C 979 M M S 2 S C 9 8 0 G M M 2SC 9 8 0 A 2 S C 982 2SC 983 € Manuf. TOSHIBA s m NEC $L 2SC1280 2SC4218 2SC2229 2SC2274 2SC495 2SC 991»'' M zÊ. 2SC998 2SC2329 2 S C 9 92 M S 2SC998 2SC2329 2SC 996 2SC372(G) & 2SC3620

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

2SC1815

Abstract: 25c1815 2SC945 2SC1740 2SC945 Y 2SC763 2SC1275 2sc1949 2SC829 2sc1741
Contextual Info: - m £ 2SC 328 2SC 329 * 2SC 330 * 2SC 331 * 2SC 332 * 2SC 333 * 2SC 334 * 2SC 335 * 2SC 336 * 2SC 337 ^ * 2SC 338 * 2SC 339 * 2SC 340 ^ * 2SC 342 * 2SC 343 * 2SC 350 •>' * 2SC 351 * 2SC 354 Manuf. # 3 SANYO Ä 3Ë TOSHIBA 2SC3S7A G TM s a NEC s i HITACHI

2sD1915

Abstract: 2912 nec NEC 2905 2sc3358 nec 2910 2SC2694 2SC3240 2SC2960 2SC3069 2SC343
Contextual Info: - m % Type No. 2SC 287 1 L 2SC 2871S 2SC 2872 ^ 2SC 2873 2SC 2875 2SC 2876 2SC 2877 _ 2SC 2878 2SC 2879 2SC 2880 ^ 2SC 2881 2SC 2882 ^ 2SC 2883 2SC 2884 2SC 2885 ^ 2SC 2891 2SC 2900 - r ' 2SC 2901 ^ 2SC 2905 2SC 2905A 2SC 2907 ' 2 SC 2908 2SC 2909 — 2SC 2910 f

High-speed switching

Contextual Info: Continued from previous page Absolute maximum ratings Type No. Package type Applications Electrical characteristics Ta » 25 hFE@VCE • 1C VCBO (V VCE0 (V) W 1C (A) PC (W) (? ) hFE VCE (V) V) f r e v c E ' 1C 1C (A) fr (MHz) VCE (V) Ic (A) tf(toff) max

2SC5187

Abstract: 2SA1936 TRANSISTORS SANYO SC3392 2sc2960 a-y
Contextual Info: SAfÜYO H IG H -SPEED SW ITCHING A P P L I C A T I O N S Small Signal Transistors] Features ♦ ♦ ♦ ♦ SANYO:SMCP Case Outlines (unit^mm -0J High switching speed High breakdown voltage Low collector saturation voltage Very small-sized package permitting a set to be made smaller

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components