2SC595 Search Results

2SC595 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC595	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	51.16KB	1
2SC595	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	35.04KB	1
2SC595	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	35.91KB	1
2SC595	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.64KB	1
2SC595	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	91.12KB	1
2SC595	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	124.63KB	1
2SC595	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	113.29KB	2
2SC595	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	84.86KB	1
2SC595	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	157.83KB	1
2SC595	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	168.98KB	1
2SC595	Unknown	Cross Reference Datasheet	Scan	PDF	39.08KB	1
2SC5950	Panasonic	Transistor for general amplification. Complementary to 2SA2122	Original	PDF	313.42KB	2
2SC5951	Sanyo Semiconductor	General-Purpose Transistors	Original	PDF	30.48KB	4
2SC5954	Panasonic	Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio	Original	PDF	54.87KB	2

2SC59540Q	Panasonic	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60VCEO 3A TO-220D	Original	PDF		2
2SC5954P	Panasonic	Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio	Original	PDF	54.87KB	2
2SC5954Q	Panasonic	Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio	Original	PDF	54.88KB	2
2SC5957	Sanyo Semiconductor	High-Voltage High-Speed Switching Transistors	Original	PDF	30.13KB	4
2SC5957M	Sanyo Semiconductor	NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications	Original	PDF	34.76KB	4
2SC595N	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.64KB	1

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Panasonic Electronic Components


Panasonic Electronic Components 2SC59540Q TRANS NPN 60V 3A TO-220D-A1
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DigiKey	2SC59540Q	Bulk			300	1 - 10 - 100 - 1000 $0.56 10000 $0.56	Buy Now

2SC595 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA2122 Abstract: 2SC5950 Contextual Info: Transistors 2SA2122 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C	Original	2SA2122 2SC5950 2SA2122 2SC5950	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic	Original	2002/95/EC) 2SC5950G 2SA2122G	PDF
IC 7667 Abstract: 2SC5951 Contextual Info: Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm 2042B [2SC5951] 8.0 4.0 1.0	Original	ENN7667 2SC5951 2042B 2SC5951] O-126ML IC 7667 2SC5951	PDF
2SC5950 Abstract: 2SC5950G 2SA2122G 2SC5632 2SA21 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic	Original	2002/95/EC) 2SC5950G 2SA2122G 2SC5950 2SC5950G 2SA2122G 2SC5632 2SA21	PDF
2SA2122G Abstract: 2SC5950G 2SA2122 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic	Original	2002/95/EC) 2SA2122G 2SC5950G 2SA2122G 2SC5950G 2SA2122	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 3 5° 2.1±0.1 1.25±0.10	Original	2002/95/EC) 2SC5950 2SA2122	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10	Original	2002/95/EC) 2SA2122 2SC5950	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 3 5° 2.1±0.1 1.25±0.10	Original	2002/95/EC) 2SA2122 2SC5950	PDF
2SA2122G Abstract: 2SC5950G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic	Original	2002/95/EC) 2SA2122G 2SC5950G 2SA2122G 2SC5950G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic	Original	2002/95/EC) 2SC5950G 2SA2122G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950G • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C	Original	2002/95/EC) 2SA2122G 2SC5950G	PDF
2SA21 Abstract: 2SA2122 2SC5950 Contextual Info: Transistors 2SC5950 Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 0.425 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10 2 0.2±0.1 1 (0.65) (0.65)  Absolute Maximum Ratings Ta = 25°C	Original	2SC5950 2SA2122 2SA21 2SA2122 2SC5950	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122G Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950G • Features  Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic	Original	2002/95/EC) 2SA2122G 2SC5950G	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10	Original	2002/95/EC) 2SC5950 2SA2122	PDF

2SC5957 Abstract: 76131 Contextual Info: Ordering number : ENN7613 2SC5957 NPN Triple Diffused Planar Silicon Transistor 2SC5957 Switching Regulator Applications Features • • • • Package Dimensions High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process.	Original	ENN7613 2SC5957 2010C 2SC5957] O-220 2SC5957 76131	PDF
2SA2122 Abstract: 2SC5950 2SA21 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 Collector-base voltage (Emitter open)	Original	2002/95/EC) 2SA2122 2SC5950 2SA2122 2SC5950 2SA21	PDF
2SA2122 Abstract: 2SC5950 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 Collector-base voltage (Emitter open)	Original	2002/95/EC) 2SC5950 2SA2122 2SA2122 2SC5950	PDF
2SC5954 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5954 Silicon NPN triple diffusion planar type Unit: mm For power amplification with high forward current transfer ratio 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/	Original	2002/95/EC) 2SC5954 O-220D-A1 2SC5954	PDF
2SC5957M Abstract: iT063 Contextual Info: 2SC5957M Ordering number : ENA0152 2SC5957M NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage and high reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Specifications	Original	2SC5957M ENA0152 PW300 cycle10% A0152-4/4 2SC5957M iT063	PDF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2122 Silicon PNP epitaxial planar type For general ampliﬁcation Complementary to 2SC5950 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10	Original	2002/95/EC) 2SA2122 2SC5950	PDF
2SA2122 Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950 Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122 Unit: mm • Features 0.15+0.10 –0.05 (0.425) 0.3+0.1 –0.0 2.1±0.1 5° 1.25±0.10	Original	2002/95/EC) 2SC5950 2SA2122 2SA2122	PDF
2SC5954 Contextual Info: Power Transistors 2SC5954 Silicon NPN triple diffusion planar type Unit: mm For power amplification with high forward current transfer ratio 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open	Original	2SC5954 2SC5954	PDF
2SC5950 Abstract: 2SA2122G 2SC5632 2SC5950G Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5950G Silicon NPN epitaxial planar type For general ampliﬁcation Complementary to 2SA2122G • Package  High forward current transfer ratio hFE  Smini typ package, allowing downsizing of the equipment and automatic	Original	2002/95/EC) 2SC5950G 2SA2122G 2SC5950 2SA2122G 2SC5632 2SC5950G	PDF
MIP2F3 Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the	Original	PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent	PDF

2SC595 Search Results

2SC595 Datasheets (21)

2SC595 Price and Stock

Panasonic Electronic Components 2SC59540Q

2SC595 Datasheets Context Search

2SA2122

IC 7667

2SC5950

2SA2122G

2SA2122G

2SA21

2SC5957

2SA2122

2SA2122

2SC5954

2SC5957M

2SA2122

2SC5954

2SC5950

MIP2F3