2SC2612 Search Results

2SC2612

Contextual Info: Inchange Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High collector breakdown voltage : VCEO=400V Min APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING

Contextual Info: 2SC2612 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -220AB 1 . Base 2. Collector Flange 3. Emitter 23 Absolute Maximum Ratings (Ta Item = 25°C) Symbol Ratings Collector to base voltage ^C B O

2SC2612

Abstract: DSA003644
Contextual Info: 2SC2612 Silicon NPN Triple Diffused ADE-208-885 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SC2612

Abstract: Hitachi DSA00336
Contextual Info: 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: 2SC2612 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline T 0-2 2 0 A B . 1 Base 2. Collector Flange 3. Em itter Absolute Maximum Ratings (Ta := 25°C) Item Symbol Ratings Unit C ollector to base voltage

Contextual Info: 2SC2612 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -220AB 1 . Base 2. Collector Flange 3. Emitter f Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage

2SC2612

Abstract: Hitachi DSA00164
Contextual Info: 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

2SC261

Abstract: 2SC2612
Contextual Info: HITACHI 2SC2612-S IL IC O N N P N T R IP L E D IF F U S E D H IG H V O L T A G E . H IG H S P E E D A N D H IG H P O W E R S W IT C H IN G 1. Rase 2. Collector F la n g e J . E r p illc r (Dimensions ¡hi dim) (J E D E C TQ -22Q A B ) M A X IM U M C O L L E C T O R D IS S IP A T IO N

Contextual Info: i HITACHI 2SC2612 SíLiCON NPN TRIPLE DIFFUSED HIGH VOLTAGE, HIGH SPEED AND HK3H POWEB SWITCHING i a* 2. CoUww Miwgc Emitter { D i i i k i u k m h . i n t« m > {JËOEC TO-220AB) I ABSOLUTE M AXIM UM RATINGS a'a=25T> Symbol Item M AXIM UM COLLECTO R DISSIPATION

Hitachi DSA002787

Contextual Info: 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

2SC2612

Abstract: Hitachi DSA002755
Contextual Info: 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage

2SC2495

Abstract: 2SD889 2SC1565 2SC2915 nec 3114 2SD1010 2SC2762 2SC3283 2SC3356 3079
Contextual Info: - tt S £ T y p e No. € Manuf. 2SC 3079 □- - A 2SC 3080 ^ □- - A 2SC 3081 #" □- A 2SC 3082 □- - A = * SANYO £ 2SC3083 2SC 3085 h m 2SC4110 — 3 ^ ÎL _= H ß » H. i¥ 2SC 3092 = 2SC 3093 H 2SC 3094 2SC2612 2SC3365 2SC3975 2SC2658 » 2SC3089 2SC2659

2SC2612

Abstract: npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2612 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High collector breakdown voltage : VCEO=400V Min APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

4946

Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
Contextual Info: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211

nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA

2sC2335

Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI

SC3150

Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335
Contextual Info: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,