2SC2274 Search Results

2SC3197

Abstract: 2sc245b 2SC3198Y 2SC3198 2SC2309 2SC2458Y 2sc3114 2SC2274D 2SC2274E 2SC2274F
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309

2SC1957

Abstract: 2SC2407A 2SC2407 2SC2314 toshiba 2SC1763 2SC2040 2SC2033 2SC2021 2SC-2021 K 2056
Contextual Info: - m € Type No. 2SC 2014 2SC 2017 2SC 2018 2SC 2020 2SC 2024 ^ ï¥ SANYO 2SC2274 □— A * . 2SC 2044 2SC 2051 2SC 2053 2055 2056 2057 ^ 2058 /' 2059 S 2060_ 36 2 TOSHIBA 2SD1090 m □ — A □— A 2SC 2061 2SC 2062 ' 2SC 2063 ^ □— A □— A □— A

2SA984

Abstract: 2SC2274 TRANSISTOR 2SA984 transistor 2sc2274 2SA984 sanyo 2SC2274-F TR 2SA984-F
Contextual Info: Ordering number: EN465G 2SA984/2SC2274 N0.465G PNP/NPN Epitaxial Planar Silicon Transistors SAXYO AF Power Amp Applications Features • High breakdown voltage Vceo—50V . • High current (Ic = 500mA). • Low saturation voltage. ( ) : 2SA984 A bsolute Maximum R atings at T a = 25°C

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2SC2274D VCBO ^CEO (V) (V) Min Min 100 80 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^EBO (V) Min 5 (W) 'c (A) 0TC=25°C 0.6 0.5 hFE 'cBO 'ces V CE (HA) 9 (V) GiA) 0 (V)

TL 2262

Abstract: 2SC2279 te 2304 2257A 2SC2050 2SC2371 2SC2611 2SD467 2sc710 2SC1815
Contextual Info: - J tt tö T fö T M anuf. € = W SANYO 2SC3416 • y'V irV y-yj-y ■y-ytry te T jä T 0 tL 0 tL S 2: 2SC1570 2SD400 2SD826 = # 0 V h a n s B m B ^ 0 tL K $ 2SC2274 2SC1755 2SC1755 CII m s s T ype No. 2SC 2257A 2SC 2258 2SC 2260 J 2SC 2261 ✓ 2SC 226 2 —2SC 2263

2SC2320

Abstract: 2SC2719 2SC984A 2SC1010 2sc372 2SD300 2SC1000 2sd1111 Toshiba 2SC995 2SC4641
Contextual Info: - s « tt T y p e No. 2SC 978 h m 2 S C 979 M M S 2 S C 9 8 0 G M M 2SC 9 8 0 A 2 S C 982 2SC 983 € Manuf. TOSHIBA s m NEC $L 2SC1280 2SC4218 2SC2229 2SC2274 2SC495 2SC 991»'' M zÊ. 2SC998 2SC2329 2 S C 9 92 M S 2SC998 2SC2329 2SC 996 2SC372(G) & 2SC3620

2SC1216

Abstract: sc 1365 2SC1006 2SC710 2SC945 2SC1740LN 2sc1364 2SC1368B 2SC2320L 2sc1162
Contextual Info: - 11 2 - ñ £ tt Type No. * 2SC 1343 H B 2SC 1344 B 2SC 1345 B 2SC 1345K « Manuf. a & h TOSHIBA 2SC1570 2SC732TM 2SC1842 2SC1570 2SC732TM 2SC1843 2SC2001 ÍI ÍL ÎL íL m b SANYO NEC 2SD734 2SC3419 * 2SC 1347 fé T 2SC2274 2SC3419 * 2SC 1354 fé T * 2 SC 1358

A984

Abstract: c2274 C2274 E transistor c2274 A984k C2274K 2SC2274 2SA984 VCEO50 transistor 2sc2274
Contextual Info: 2SA984, 984K 2SC2274, 2274K 465F f “ ill PNP/npn E p ita x ia l Planar S ilic o n T ransistors 2 0 03 A Low Frequency Power Amp Applications Features . High breakdown v o l t age V c e o = 5 0 / 8 0 V . . High current (Ic=500mA). . Lo w saturation voltage.

Contextual Info: 2SC2274 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)600m @I(C) (A) (Test Condition)400m

transistor 2sc2274

Abstract: 2SC2274 2sc2274e 2SC2274F 2SC2274-F 2SC2274 E, K 2SC2274-D 2SC2274-E 2SC2274 transistor
Contextual Info: 2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  High Breakdown Voltage  High Current  Low Saturation Voltage TO-92 G H Emitter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2274 TRANSISTOR NPN 1. EMITTER FEATURES z High Breakdown Voltage z High Current z Low Saturation Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2259

Abstract: 2SC2283-MA 2sc2238 2SC2246 2SC2283 2sc2233 2sc2284 2SC2273 2SC2272 2SC2237
Contextual Info: - 118 - Ta=25eC. *ÉPÍáTc=25T5 m & 2SC2228Y 2SC2229 2SC223Ö 2SC2230A 2SC2233 2SC2235 2SC2236 2SC2237 2SC2238 2SC2238A 2SC2238B 2SC2240 2SC2242 2SC2243 2SC2244 2SC2245 2SC2246 2SC2247 2SC2250 2SC2258 2SC2259 2SC2271 2SC2272 2SC2273 2SC2274 2SC2274K 2SC2275

2SC3197

Abstract: 2SC3198G 2SC2458BL 2SC2274D 2SC2274E 2SC2274F 2SC2274K 2SC2309 2SC2309D 2SC2309E
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics i Ta=25”C, Unless Otherai se Spec tied) Maximum Ratings Type No. 2SC2274D ^CBO ^CEO EBO (V) Min (V) Min V) Win 100 80 5 I c Po (W) A) È TC=25"C 0.6 CBO ^CB CES V CE HA) 0 (V ) pA) (V)

2sc245b

Abstract: 2SC3197 2sc3114 2sc3199 2SC3198-BL 2SC3198 2SC2274D 2SC2274E 2SC2274F 2SC2274K
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309

2SC460

Abstract: 2SC945 410A NEC 426 2SC2220 2SC783 2SD867 toshiba 2sc783 2SC2839 2SC1815
Contextual Info: 87 - it m £ Type No. 2SC 403 £ Manuf. * V — — SANYO 2SC2274 V — — 2 SC 403A 2SC 404 V “— 2 SC 405 > h m 2SC 406 3 m M £ TOSHIBA 2SC1815 2SC2839 2SC1815 ¿01 60) $Tm JL 2SC1576 2SC 410 ^ 2SC 410A 2SC829 2SC460 □ — A ROHM 2SC1740 2SC1740 2SC460

stk403-090

Abstract: stk*403-090 STK403-100 stk403 090 STK433-320 STK403 130 stk*433-320 STK403 - 090 STK433-260 stk403 040
Contextual Info: Ordering number : EN*A1247A Thick-Film Hybrid IC STK433-030-E 2-channel class AB audio power IC, 30W+30W Overview The STK433-030-E is a hybrid IC designed to be used in 30W x 2ch class AB audio power amplifiers. Applications • Audio power amplifiers. Features

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

2SC783

Abstract: 2SC2290 2SC3421 2SC1174 2SC1275 2SD1577 2SC1175 2sc 1177 2SC1167 2SC2329
Contextual Info: % T ype No. tt B £ Manuf. SANYO TOSHIBA m NEC B ±L HITACHI Ä ± Ä F U JIT S U tö T MATSUSHITA h m M IT SU B IS H I □ — A ROHM * 2SC 1153 * 2SC 1154 ~ X * 2SC 1155 E. # 2SD600 2SC3421 2SD1378 * 2S0 1156 EL g 2SD6Ü0 2SC3421 2SD1378 * 2SC 1157 H 2SC3421

NEC 3358

Abstract: 2SC3498 2SC3301 2SC2144 2sc3607 2SC3346 2sc3632 2SC3631 2SC162 2SC4042
Contextual Info: - 16 0 - m % tt Type No. € Manuf. H 2SC 3326 s Ä 2 2SC4577 2SC 3327 ^ 3K IE 2SC4577 2SC 3329 S $ „ h 2SC 3331 ✓ h 2SC 3332 *" = m m m M Æ 2SC 3330 2SC 3333 M ~$. 2SC 3334 2SC 3335 2SC 3336 r. S JE B 3Ï 2SC 3341 s * 0 ^ X S Ä 2SC 3342 B ÎL B ÎL

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906

stk 1039

Abstract: STK1039 stk power amplifier ic Q4004 GZA9.1 STK 411 230 E 2SC2274 STK power amplifier 2SA984 TR 1039
Contextual Info: STK 1039 Thick Film Hybrid IC 2M M 3 5 W min. AF Power Amplifier Output Stage D.P.P. 35W min. A F / N ° r7 - 77 > 7 ° ttj* fä (D .P .P .) X i >;/ $ ì& fjifàM ★ I M S T system . ★ Em itter resistors installed. 749A if * • x v y i l& fttS: ’Z 'W £ U

transistor c2274

Abstract: transistor a984 A984 sc2274 transistor sc2274 2SA984 c2274 2SC2274 C2274 E C2274K
Contextual Info: SANYO S EM ICO NDUC TOR CORP 35E D • 7*H707fc, OOtHlfll 1 B9 ^ r -i:? -;:/ * PNP/ NPN Epitaxial Planar \ Silicon Transistors 2003A Low-Frequency Power Amp Applications i 465F Features . High breakdown voltage(Vc e o =50/80V . . High current (Ic=500mA).

2SB1406

Abstract: 2SK715
Contextual Info: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP