2SB1339 Search Results

2SD1888

Abstract: 2SB1339
Contextual Info: SavantIC Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·DARLINGTON ·Complement to type 2SB1339 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION

2sd1888

Abstract: 2SB1339 2sb133
Contextual Info: Inchange Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・Complement to type 2SB1339 ・High DC current gain APPLICATIONS ・Low frequency power amplification PINNING PIN DESCRIPTION

2SB1339

Contextual Info: h "7 > y 7k$ / T 2SB1339 ransistors 2SB1339 & - 'j> h> w m Epitaxial Planar PNP Silicon Transistor Darlington 1£JH )& £2ji84iffl/L o w Freq. Power Amp. 1ÿ t-ïïi'+ ü /Dim ensions (Unit : mm) 1) ? - • ; > h > * £ < * ? hFE t f ’S L 'o 2) K r tjffio

2SB1339

Contextual Info: SavantIC Semiconductor Product Specification 2SB1339 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications

2SB1335A

Abstract: 2SB1333 2SB1365 2SD2021 2SB1320A 2SB1353 2sb1355 2SB1335 2SB1342 2sb1357
Contextual Info: - 86 - Ta=250C, *EPÍÍTc=25T; m 2SB1320A 2SB1321A 2SB1322A 2SB1323 2SB1324 2SB1325 2SB1326 2SB1333 2SB1334 2SB1334A î± % fôT fòT & T H# Hi* H # a—A a —A D— A a —A ¿0 010 03 D— A 2SB1335A 2SB1339 2SB1340 2SB1341 2SB1342 2SB1343 2SB1344 2SB1346

2SB1339

Contextual Info: Inchange Semiconductor Product Specification 2SB1339 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications

2sa970

Abstract: 2SA564A 2SA906 2sa1015 2SA988 2SA904A 2SA1142 2SA1207 2sa949 2SA1038
Contextual Info: - 2SA 893A 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 894 895 896 89/ 898 ^ 899 ^ 900 / 901 2SA 902 ^ 2SA 903 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 904 905 ^ 906 ^ 912 913 913A 914 915 — 916 , 917 ^ 918 2SA 920 2SA 921 2SA 2SA 2SA 2SA 2SA 922 S 923 '' 924 925

2SB557 TOSHIBA

Abstract: 2SB1314 toshiba 2sb554 2SB546A 2SB596 2sa483 2SB554 2SB54 2SB557 2SB857
Contextual Info: 564 565 . 566 y 566AK 2SB 566K 2SB 567 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 568 569 „ 510 571 572 „ 573 ^ 574 575 •576 ' 2SB 577 , 2SB 578 ^ 2SB 579 2SB 2SB 2SB 2SB 2SB 2SB 580581 582 583 584 585 2SB 2SB 2SB 2SB 2SB 2SB 586 595 596 598 599 600 2SB 601

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SB596

Abstract: 2SB686 2SB824 2sb773 2SB773A 2SA1232 2SB 773 2SB965 2SA1283 773a
Contextual Info: - 52 - m % £ Type No. Manuf. = i# SANYO jpr ^ TOSHIBA S H NEC B ÍL HITACHI * ± a FUJITSU fâ T MATSUSHITA = m MITSUBISHI a — A ROHM 2SB 762 . «1 T 2SB596 2SB703 2SB859 2SB942 2SB1334 2SB 762A fé T 2SB596 2SB703 2SB859 2SB942A 2SA1634 2SB 762B fé T

2SB1099

Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
Contextual Info: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A

toshiba 2SB755

Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Contextual Info: 50 - m. € £ Type No. 2SB 698 - Manuf. n = SANYO M. 2SA950 2SA952 2SA1232 * B ÍL 2SB817 2SB 700 - B ÍI 2SB817 2SB755 2SB 700A B AL 2SB817 2SB755 B ÍL 2SB755 B ÍL 2SB756 2SB 703 , 2SB 703A 2SB 705 2SB 710 tö T MATSUSHITA 2SA719 & — MITSUBISHI 2SA1398

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SD1888

Abstract: d1888 2SB1339
Contextual Info: h 7 > y Z. 2 /Transistors 2SD1888 X 2 S D 1 888 * y 7’J & l s — f B NPN y U =1 > h 7 > y * $ Epitaxial Planar NPN Silicon Transistor Darlington IM S ^llS 'liffl/L o w Freq. Power Amp. T h iH l/D im en sio n s (U n it: mm) 1) # - ' J > h > I S « T ' h F E

2SB1185

Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o

2SB897

Abstract: 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973
Contextual Info: 73 - m % € Type No. Manuf. & .E SANYO 2S8 1459 in 2SB 1460 □— □— A 2SA1704 A 2SA1692 fé T 2SB 1464 fé T 2 SB 1467 = * / IH 2SB 1462 2SB 1468 2SB 1471 NEC B HITACHI ±L ± a FUJITSU fô T MATSUSHITA m M IT SU B ISH I □ — A ROHM 2SB1452 2SA1774

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

2SD1933 transistor

Abstract: 2SD1933 2SB133 2SB1342 2sd1933 rohm
Contextual Info: h "7 > y ^ ^ / T ransistors 2SD1933 2SD1933 X t i ^ d f - y ^ u y U - ^ N P N y 'J Z l> Epitaxial Planar NPN Silicon Transistor Darlington ffiJii&SlfriSfSffl/Low Freq. Power Amp. 1^ U fi^ jiE I/D in ie n s io n s (Unit : mm) 1) ? - 'J > 2) ? > / < - ? < * - K r tlK o