2SB1198 Search Results

Contextual Info: 2SB1198K Transistor, PNP Features Dimensions Units: mm available in SMT3 (SMT, SC-59) package 2SB1198K (SMT3) 2.9 * 0-2 package marking: 2SB1198K; AK-*, where ★ is hFE code low collector saturation voltage, typically VCE(sat) = -0.2 V for Ic /Ib = -0.5 A/-50 mA

Contextual Info: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dim ensions (Unit:s mm) LOW VcE(sat). VcE(sat) = — 0.2V (Typ.) (I c / I b = 2) 2.9±0.2 1 1 + 0 -2 11- 0 1 1.0±O.2_ - 0 .5 A /- 5 0 m A ) . ± 0.1 08 0.950.95

2SB1198K

Abstract: 2SD1782K T146 2SD1782K ROHM low capacitance NPN transistor
Contextual Info: 2SD1782K Transistors Power Transistor 80V, 0.5A 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1

Contextual Info: Transistors Low-frequency Transistor -80V, - 0.5A 2SB1198K • Features 1) •E x te rn a l dimensions (Unit:s mm) LOW VcE(sat). 2.9+0.2 VcE(sat) = —0.2V (Typ.) (Ic / I b +0-2 L—i 1 11 1.9+0.2 = - 0 .5 A /-5 0 m A ) 0 .8 ± 0.1 □ 2) High breakdown voltage.

Contextual Info: Product specification 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

2SB1198K

Contextual Info: 2SB1198K PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A L S 2 FEATURES 3 Top View Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 B 1 D G Power dissipation : 0.2

Contextual Info: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)

Contextual Info: Transistors SMD Type PNP Transistors 2SB1198K SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low V CE sat .V CE(sat) =-0.2V 1 BVC EO=-80V 0.55 ● High berakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 V CE(sat)=-0.2V 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

CLAA141XB01

Abstract: 71-22T00-D03 TLR303 LP141X5 cy4h Z768 LP133X7 IK04 JC283 ht13x
Contextual Info: Schematic Diagrams Appendix B: Schematic Diagrams Mainboard 71-22T00-D03 Sheet 1 of 31 OVCCT H 0*3 635 l U ifl AMO S _ d A l i _AW L S _-£iA*2_AMU \ ;iA * . . \ _ AfcLUL V_ H M 2 _ AL2_ \ _ HAJL1G_Afctfe. _ K _ H A I l i t _ A tti\ . H A lL i. AkL

2SC4911

Abstract: 2SC5073 2SC5072 equivalent 2sc3722k T147 2SC4619 2SC3082K 2SC4723 2sc4997 equivalents 2sa1455k
Contextual Info: Transistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to TO-220, Pc=35W transistors. EM3 • UNIT • SMT Three types are available to allow the most suitable package depending on size specifications.

2SA1622

Abstract: 2SA1699 2sa1015 2SA1586 2s8817 2SA1162 2SA1638 2SA1782 2SA1018 2SB1198K
Contextual Info: m £ Type No. 2SA 1614 2SA 1615 , 2SA 1615Z 2SA 1616 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1617 16181619 1620 1621 ^ 1622 ' 1623 1624 1625 1626 1628 1629 1630 , 1631 1632 1633 ' 1634 1635 • 1636 1637

Contextual Info: Transistors Power Transistor 80V, 0.5A 2SD1782K •F e a tu re s 1) External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0.2V (Typ.) ( I c / I b = 0.5A/50mA) 2) High breakdown voltage. 2.9±0.2 1 1 + 0 -2 y -0.1 o.0 ±o.1 1.9±0.2 B V ceo = 8 0 V N ’»—

Contextual Info: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =

2SD1796

Abstract: SC64 2SB1204 2SD1802 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1808A 2SD1774
Contextual Info: - 266 - Ta=25Tî, *EPfíTc=25<C M 2SD1771 2SD1771A 2SD1772 2SD1772A 2SD1773 2SD1774 2SD1774A 2SD1775 2SD1775A 2SD1776 2SD1776A 2SD1777 2SD1778 2SD1778A 2SD1779 2SD1780 2SD1781K 2SD1782K 2SD1783 2SD1784 ¿ÒUi föO 2SD1787 2SD1796 2SD1797 2SD1799 2SD1800