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2SB1115 datasheet (25)

Part ECAD Model Manufacturer Description Type PDF
2SB1115 2SB1115 ECAD Model Kexin PNP Silicon Epitaxial Transistor Original PDF
2SB1115 2SB1115 ECAD Model NEC Semiconductor Selection Guide 1995 Original PDF
2SB1115 2SB1115 ECAD Model NEC Semiconductor Selection Guide Original PDF
2SB1115 2SB1115 ECAD Model TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-89 Original PDF
2SB1115 2SB1115 ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB1115 2SB1115 ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SB1115 2SB1115 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB1115 2SB1115 ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SB1115 2SB1115 ECAD Model NEC PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Scan PDF
2SB1115 2SB1115 ECAD Model NEC Silicon Transistor Scan PDF
2SB1115A 2SB1115A ECAD Model Kexin PNP Silicon Epitaxial Transistor Original PDF
2SB1115A 2SB1115A ECAD Model NEC Semiconductor Selection Guide 1995 Original PDF
2SB1115A 2SB1115A ECAD Model NEC Semiconductor Selection Guide Original PDF
2SB1115A 2SB1115A ECAD Model TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-89 Original PDF
2SB1115A 2SB1115A ECAD Model Others The Transistor Manual (Japanese) 1993 Scan PDF
2SB1115A 2SB1115A ECAD Model Others Transistor Substitution Data Book 1993 Scan PDF
2SB1115A 2SB1115A ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2SB1115A 2SB1115A ECAD Model Others Japanese Transistor Cross References (2S) Scan PDF
2SB1115A 2SB1115A ECAD Model NEC PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Scan PDF
2SB1115A-T1 2SB1115A-T1 ECAD Model NEC Silicon Transistor Scan PDF

2SB1115 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1115A

Abstract: D1794 2SB1115 k1985
Text: Silicon Transistor 2SB1115 , 1115A PNP D17940JJ3V0DS00 3 TC-5825A February 2006 NS CP(K) 1985 2SB1115 ,1115A TA = 25°C 2 D17940JJ3V0DS 2SB1115 ,1115A D17940JJ3V0DS 3 2SB1115 ,1115A · 20062 · · · · · OAAV NECNEC M8E02.11 NEC 211-86681753 044(435)5111 NEC URL http://www.necel.co.jp/ 044-435-9494 9:0012:00 1:005:00 E-mail info@necel.com NECNEC C04.2T NEC


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PDF 2SB1115, D17940JJ3V0DS00 TC-5825A 2SB1115 D17940JJ3V0DS M8E02 1115A D1794 k1985
1115A

Abstract: 2SB1115 D1794
Text: Silicon Transistor 2SB1115 , 1115A PNP D17940JJ3V0DS00 3 TC-5825A February 2006 NS CP(K) 1985 2SB1115 ,1115A TA = 25°C 2 D17940JJ3V0DS 2SB1115 ,1115A D17940JJ3V0DS 3 2SB1115 ,1115A · 20062 · · · · · OAAV NECNEC


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PDF 2SB1115, D17940JJ3V0DS00 TC-5825A 2SB1115 D17940JJ3V0DS M8E02. 1115A D1794
2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Text: 2SA1369 2SB1188 2SB 1122/ = Â¥ 2SA1735 2SB1115 2SB1002 2SB766A 2SA1364 2SB1260 2SB 1123._  , –¡ —A 2SA1770 2SB1545 2SB 1131, = ;Â¥ 2SB873 2SB 1132 - □ -A 2SB1122 2SA1203 2SB1115


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PDF 2SB1121 2SA1213 2SB1001 2SB956 2SB1188 2SB1122 2SA1201 2SB1002 2SB766A 2SB1260 2SB1099 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
1999 - "Voltage Detector IC"

Abstract: NEC TRANSISTOR MARKING CODE 2SB1115 transistor 847 2SA1242 2SB1114 2SB1302 2SB624 2SB799 nec 022
Text: . Page 3 TK73200 TEST CIRCUIT CP CN RP VIN CIN Note:Transistor: 2SB1115 CN = 0.1 µF , is 2SB1115 (NEC), unless otherwise specified. LOAD REGULATION 0 10 VOUT (5 mV/ DIV) VOUT , 3 VOUT = 5.0 V 2 1 2SB1115 -200 2SB1114 2SB1302 -300 0 10 VIN (V) Page 4 , transistor is 2SB1115 (NEC), unless otherwise specified. CURRENT LIMIT DETECTOR VOLTAGE VS. INPUT VOLTAGE , , external transistor is 2SB1115 (NEC), unless otherwise specified. CONTROL PIN VOLTAGE VS. CONTROL


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PDF TK73200 TK73200 control8-2375 IC-xxx-TK732xx 0798O0 "Voltage Detector IC" NEC TRANSISTOR MARKING CODE 2SB1115 transistor 847 2SA1242 2SB1114 2SB1302 2SB624 2SB799 nec 022
NEC 1357

Abstract: 2sa1175 2SB710 2SA914 2SA937 2SA1091 2SA953 2SA1309A 2sa1361 2SA1142
Text: 2SB1115 2SB624 2SB736 2SA1175 2SB805 2SB1115 2SA1376 2SB1Ì10 2SB956 2SB766 2SB710 2SB710 2SA1309A


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PDF 2SA1351, 2SA1352, 2SA953 2SA1309A 2SA914 2SB1011 2SA937 2SA1142 2SA1700 2SB825 NEC 1357 2sa1175 2SB710 2SA937 2SA1091 2SA953 2sa1361 2SA1142
2006 - 1115A

Abstract: D1794 2SB1115
Text: . DATA SHEET SILICON TRANSISTOR 2SB1115 , 1115A PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD , 2006 NS CP(K) Printed in Japan c 1985 2SB1115 ,1115A TYPICAL CHARACTERISTICS (TA = 25°C) 2 Data Sheet D17940EJ3V0DS 2SB1115 ,1115A Data Sheet D17940EJ3V0DS 3 2SB1115 ,1115A


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2006 - 1115a

Abstract: D1794 2SB1115 1115A ics NEC Systems
Text: DATA SHEET SILICON TRANSISTOR 2SB1115 , 1115A PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available , February 2006 NS CP(K) Printed in Japan c 1985 2SB1115 ,1115A TYPICAL CHARACTERISTICS (TA = 25°C) 2 Data Sheet D17940EJ3V0DS 2SB1115 ,1115A Data Sheet D17940EJ3V0DS 3 2SB1115 ,1115A


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PDF 2SB1115, D17940EJ3V0DS00 TC-1624A) 2SB1115 D17940EJ3V0DS 1115a D1794 1115A ics NEC Systems
Transistor TT 2140

Abstract: lithium ion battery charger
Text: , Inc. Page 5 TK732xx TEST CIRCUIT CP CN Transistor: 2SB1115 CN = 0.1 \ J iF Cp =0.1 \xF CL , transistor is 2SB1115 (NEC), unless otherwise specified. LINE REGULATION 1 LINE REGULATION 2 ( 0 W D IV , , External transistor is 2SB1115 (NEC), unless otherwise specified. CURRENT LIMIT DETECTOR VOLTAGE vs , CHARACTERISTICS T a = 25 °C, External transistor is 2SB1115 (NEC), unless otherwise specified. CONTROL PIN , 0 ~1A 0 -2 A 0 -3 A 0 ~4A RECOMMENDED EXTERNAL TRANSISTOR 2SB624, 2SB1115 , 2SB799 (NEC), 2SB970


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PDF TK732xx TK732xx 1998TokOi xx-TK732xx Transistor TT 2140 lithium ion battery charger
1999 - nec 3435 transistor

Abstract: 11-365 MARKING toshiba 133 2SB1114 2SB1115 2SB1302 2SB624 2SB799 2SB970 TK73241MCLH
Text: TK732xx TEST CIRCUIT CP CN RP VIN CIN Note:Transistor: 2SB1115 CN = 0.1 µF CP = 0.1 µF , 2SB1115 (NEC), unless otherwise specified. LOAD REGULATION 0 10 VOUT (5 mV/ DIV) VOUT (10 mV , 2SB1115 -200 2SB1114 2SB1302 -300 -400 10 VIN (V) Page 6 20 3 2 1 0 0 4 , PERFORMANCE CHARACTERISTICS (CONT.) TA = 25 °C, external transistor is 2SB1115 (NEC), unless otherwise , 2SB1115 (NEC), unless otherwise specified. CONTROL PIN VOLTAGE VS. CONTROL CURRENT ON/OFF TRANSIENT


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PDF TK732xx IC-xxx-TK732xx 0798O0 nec 3435 transistor 11-365 MARKING toshiba 133 2SB1114 2SB1115 2SB1302 2SB624 2SB799 2SB970 TK73241MCLH
D1615

Abstract: B1115A 2SB1115M
Text: SILICON TRANSISTORS 2SB1115 , 2SB1115A PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLO DESCRIPTION 2SB1115 , 2S B 1115A are designed fo r audio frequency pow er a m p lifie r and sw itching a p p , 20-4 2SB1115 , 2SB1115A TYPICAL CHARACTERISTICS (Ta = 25 °C> T O T A L P O W E R D I S S I P A , N IT nA nA nA 2S B 1 1 1 5 2SB1115A T E S T C O N D IT IO N S V c f l = -6 0 V , l E = 0 V c 0 = , 2SB1115A V cE = - 2 0 V, t c = -1 0 A IC = - 1 . 0 A , I q * - 5 0 m A I q = -1.0 A , lg Ä - 50 m A V CE


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PDF 2SB1115, 2SB1115A D1615, B1115 D1615 B1115A 2SB1115M
transistor 3095

Abstract: 73TA
Text: p C n -X X - Note: Transistor: 2SB1115 CN = 0.1 nF Cp = 0.1 jiF CL = 4.7 nF Rp = 330 k Continuous , PERFORMANCE CHARACTERISTICS Ta = 25 °C, external transistor is 2SB1115 {NEC), unless otherwise specified. UNE , transistor is 2SB1115 (NEC), unless otherwise specified. CURRENT LIMIT DETECTOR VOLTAGE vs. INPUT VOLTAGE , CHARACTERISTICS (CONT.) Ta = 25 °C, external transistor is 2SB1115 (NEC), unless otherwise specified. CONTROL , EXTERNAL TRANSISTOR 2SB624, 2SB1115 , 2SB799 (NEC), 2SB970 (Matushita) 2SB1115 , 2SB799 (NEC) 2SB1114


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PDF TK732XX TK732xx TK732xxMCLH) transistor 3095 73TA
B1115

Abstract: mrf 510 lt 8220 LPRO lti 1302 TK732xxM 2SB1115 400H TK73200 TK732XX
Text: IPK m IsJLJUfeJ n fJ h UT 1 Cont GND Tr 2SB1115 Cn O.luF Cp 0.1 ¿t F CL 4.7 M F ^ IPK Q , ) ifitttfiË&ftttffl 0-180mA 0.39~0.33 Q 0—300mA 2SB1115 ,2SB799(NEC) 0.22 ~0.27 0~500mA 2SB1114, 2SB1115 (NEC),2SB1302(Sanyo) 2SA1203 A1213 A1734(Toshiba)-£- , Dropout-Voltage Non current limit Output-Current VS Quiescent-Current 2SB1115 (NEC) w


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PDF T145-8585 T350-2281 TK732xx s0t23l-8 GC3-E008 B1115 mrf 510 lt 8220 LPRO lti 1302 TK732xxM 2SB1115 400H TK73200
2SB111

Abstract: 2SB1115 2SB1115A 1115a
Text: , SYMBOL *CBO 'ebo h FE1 , ^FE 2 * * M IN. TYP. M AX. U N IT nA nA nA 2SB1115 2SB1115A V Eb = 2SB1115 2SB1115A TEST CO N D ITIO N S V CB = -60 V, l E = -1 0 0 -1 0 0 -1 0 0 135 135 340 , TYPICAL CHARACTERISTICS (Ta = 25 °C) 2SB1115.2SB1115A T O T A L P O W E R D I S S I P A T I O N vs , 2SB1115 , 2SB1115A G A I N B A N D W I D T H P R O D U C T vs. E M IT T E R C U R R E N T O U T P U T , No. TC -1624A (O.D.No. T C -5 8 2 5 A ) Date Published November 1994 Printed in Japan M 2SB1115


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PDF 2SB111 2SB111 2SB1115 2SB1115A 1115a
CI 1115a

Abstract: 2SB1115 2SB1115A 2SD1615 SIN 002 T-1.0
Text: NEC ^Y P N P xt °^ 2SB1115 , 2SB1115A 1 ÌW ^êâfOtg;i±Aiift <, K7-Î7*, D -S ·S / -K S ilic , * * 16 cm 2 x 0 . 7 mm e?) - t 7 î .y ? (T a = 2 5 ° o JH b «& 2SB1115 IcBO I kbo hr-iii , * hFK2 t s f cH * Vbe 1 7 * VCE(sat) H 4 ^ VBK( sat ) sfe > > o o O < x > C 1 3 2 !> t> 2SB1115A * * * 2SB1115 fE o o MIN. TYP. MAX. -100 -100 # fir. nA nA 3 i it v ? i7 L t ì y ft , ija ("il A" 2SB1115A iff iff 8È - M X \ V ce = -2.0 V, I c = 1.0 A V ce =


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PDF 2SB1115, 2SB1115A SB1115 CI 1115a 2SB1115 2SD1615 SIN 002 T-1.0
Not Available

Abstract: No abstract text available
Text: Product specification 2SB1115 Features World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -6 V IC -1 A Collector current (pulse) * IC -2 A Total power dissipation PT 2 W Junction temperature Tj 150 Tstg -55 to +150


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PDF 2SB1115
2SB1099

Abstract: 2SD1491 2SB1100 2sb111 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077
Text: 5 -0. 05 2SB1115 BIS LF PA -60 -50 -1 2 -0.1 -60 135 600 -2 -0.1 -0.3 -1. 2 . -1 -0.05 - 75 - a , 25* 2SD1615 SC-62 ECB 2SB1115


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PDF 2SB1072L 2SB1072S 2SB1073 2SB1075 2SB1076M 2SB1077 2SB1078K 2SB1099 MP-45) 2SB1100 2SB1099 2SD1491 2SB1100 2sb111
tic 2360

Abstract: No abstract text available
Text: ) > Q > V qut T a = 25 °C, external transistor is 2SB1115 (NEC), unless otherwise specified. Z , CHARACTERISTICS (CONT.) T a = 25 °C, external transistor is 2SB1115 (NEC), unless otherwise specified. CONTROL , 0 ~ 180 mA 2SB624, 2SB1115 , 2SB799 (NEC), 2SB970 (Matushita) 0.33 ~ 0.39 0 ~ 300 mA 2SB1115 , 2SB799 (NEC) 0.22 ~ 0.27 0 ~ 500 mA 2SB1114, 2SB1115 (NEC), 2SB1302 (Sanyo), 2SA1203


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PDF TK732XX tic 2360
smd TRANSISTOR YK

Abstract: smd marking YK transistor yk 2SB1115 TRANSISTOR SMD PNP 1A ic marking YK marking YL smd pnp marking YK transistor marking YK
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1115 Features World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V Emitter to base voltage VEBO -6 V IC -1 A Collector current (pulse) * IC -2 A Total power dissipation PT 2 W Junction temperature Tj


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PDF 2SB1115 smd TRANSISTOR YK smd marking YK transistor yk 2SB1115 TRANSISTOR SMD PNP 1A ic marking YK marking YL smd pnp marking YK transistor marking YK
2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Text: 2SB1068 2SB1114 2SB1116 2SB1115 2SB1116A 2SB1115A 2SB804 2SB805 2SB806 2SC2001 , ) ~200 m 2SC3554 2SC3617 ~300 m 2SC3618 2SA1463 2SB1115 2SC3736 2SD1615 2SD1702 ~1.0 , 2SD999 ~0.7 2SB1301 HC2[ ] (16 V) HQ2[ ] (­16 V) 2SB805 2SD1006 2SB1115A 2SD1615A HD1


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PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
2SB1099

Abstract: 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347 2SB966 2SB967 2SB968 2SB970
Text: 5 -0. 05 2SB1115 BIS LF PA -60 -50 -1 2 -0.1 -60 135 600 -2 -0.1 -0.3 -1. 2 . -1 -0.05 - 75 - a , 25* 2SD1615 SC-62 ECB 2SB1115


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PDF 2SB966 2SB967 2SB968 2SB970 2SB973 2SB974 2SB1099 MP-45) 2SB1100 2SD1601 2SB1099 2sd1589 2SB1100 2SD1407 2SB1089 2SD1347
1115A

Abstract: e 1115a
Text: DATA SHEET NEC SILICON TRANSISTORS 2SB1115 , 2SB1115A PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D E S C R IP T IO N 2 S B H 1 5 , 2 S B 1 1 1 5 A are designed fo r a udio frequency p ow er a m p lifie r and sw itching a p p lic a tio n , especially in H y b rid In te grated C ircuits. FEATURES PACKAGE DIMENSIONS in m iflim e te rs · W o rid S tan d ard M in ia tu re Package · Lo w V c £ ( s a t)- V c E (s a t) = -0 .2 V a t 1 A · C o m p le m e n t to 2 S D 1 6 1 5 , 2 S


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PDF 2SB1115, 2SB1115A 1115A e 1115a
2SB62

Abstract: f50510 TK732xxM
Text: , 2SB1115 , 2SB799 (NEC), 2SB970 (Matushita) 2SB1115 , 2SB799 (NEC) 2SB1114, 2SB1115 (NEC), 2SB1302 (Sanyo


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PDF TK732xx TK732xx 1C-2375 IC-xxx-TK732xx 2SB62 f50510 TK732xxM
1999 - uPD72002-11

Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Text: [ 2SA1463 2SB1114 2SB1115 2SB1115A ] ] ] ] 2SB1571 2SB1572 2SB1628 2SB798 2SB799 2SB800 2SB804 2SB805 , 2SC945 2SA1330 2SA1376 2SA952 2SA953 2SA954 2SB1068 2SB1114 2SB1115 2SB1115A 2SB1116 2SB1116A 2SB564


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PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
2sb1099

Abstract: 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595 2SD1583-Z 2SD1584
Text: * 2SB1115 SC-62 ECB 2SD1615 80 2 0.1 19* 2SB1115A SC-62 ECB 2SD1615A 100 2 0.1 0.07* 0.07* 0.95* 19


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PDF 2SD1583-Z 2SD1584 2SD1584-Z 2SD1585 2SD1586 2SD1587 2SD1588 T0-220ABJFJ 2SD1606 2SB1108 2sb1099 2SB1100 2sd1593 2SD1594 2SD1617 LFPA 2SD1591 2SD1595
5810A

Abstract: 2SD1615A 2SD1615 2SB1115 2SC1615 GP135
Text: DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS · World Standard Miniature Package · Low VCE (sat) VCE(sat) = 0.15 V · Complement to 2SB1115 , 2SD1115A in millimeters 4.5 ± 0.1 ABSOLUTE MAXIMUM RATINGS 1.5 ± 0.1 0.42 ± 0.06 B 4.0 ± 0.25 C E 2.5


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PDF 2SD1615, 2SD1615A 2SB1115, 2SD1115A 2SD1615 5810A 2SD1615A 2SB1115 2SC1615 GP135
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