2SA808
Abstract: 2sa808a 2SA807 SAFT 2sa tr
Contextual Info: 2SA807, 2SA808, 2 S A 8 0 8 A Mis' a > P N P i t • Ta = 25°C) g m ¡e -t 2SA 807 2SA 808 2SA808A u 9 9 ■ •'<— XflCEE VcBO -60V -80V -100V 3 1 ' ? r i ; - ï ?H l /± VcEO -60V -80V -100V i V ebo —6V le -6A 3 ; y9 ■ 2. I t ff. 9 9W âL Xltift
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2sa8072sa8082sa808a-100v+4--50ma10mhzsaft2sa tr
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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transistor 1247a
Abstract: 1207B 2SC911 NFA 222 2SC1271A 2SC911A 1711A FJ 403E 2SA872A 2SC1207A
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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150mhz2sa794at--252sa808a+141707a1300ns220ns100hztransistor 1247a1207b2sc911nfa 2222sc1271a2sc911a1711afj 403e2sa872a2sc1207a
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2sc1695
Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1601 35 100 200 175 150 6 1 200* 2 2SC1602 35 100 150 125
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2sc16012sc16022sc16032sc1604+162sc16052sc1605a2sc16062sc16072sc16082sc16092sc16952sc16942sc16932sc16962sc17002sa8352sc16112sc16992sc16482sc1616
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80244C
Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 55 60 65 70 75 80 85 90 95 Max 15 15 15 15 15 15 15 20 25 25 75 75 75 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 120 120 120 120 120 120 40 55 120 15 15 20 20 40 40 200 160 240 6.0 6.0 6.0 6.0 6.0 6.0
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80244crca1c112s8754mj04+32s8999bot42c2s8553
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2SA678
Abstract: transistor 1247a 2SC911 sf 1605a 2SA1007A 2SC1207 2sa705 2SC1271 2SC1271A 2SC911A
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M -EiiO SW H E N ew T ransistor Manual lists all the transistors registered w ith the Electronic Industries A ssociation of Japan (EIAJ), arranged in a manner easy to look up. W e hope that you w ill m ake full use of the data provided in this manual by referring to the Japanese-English
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2139a2sa968a2238b2sa968b+102sa678transistor 1247a2sc911sf 1605a2sa1007a2sc12072sa7052sc12712sc1271a2sc911a
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2SA884
Abstract: 2sa835 2SA823 2SA899 2SA810 2SA866 2SA840 2SA852 2SA855 2SA809
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) 2SA801 2SA802 2SA803 2SA804 2SA805 2SA806 -20 -130 -130 -130 -180 -210 2SA807 -60 2SA808 -80 (V) (mA) (mW) -3 -5 -5 -5 -5 -5 -50 -30 -30 -50 -30 -30 Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE
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2sa8012sa8022sa8032sa804+152sa8052sa8062sa8072sa8082sa808a2sa8092sa8842sa8352sa8232sa8992sa8102sa8662sa8402sa8522sa855
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nec 2Sb617
Abstract: 2SA1102 SANKEN 2SD371-0 sanken 2sa1102 LT019 181T2B Gentron 2SA808A LT019S 2SB617
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A fT t0N r hFE 'CBO Max Max Max on ON) Min (Hz) (A) (8) Max (Ohms) 60 60 60 60 65 65 65 65 65 65 65 65 75 100 100 100 100 100 100 40 40 40 40 40 40 40 50 50 50 60 60 22 40 50 85 85
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ida1263idc31802sa12632sc3180+14bdt41bbdt42bbd244bssp82bnec 2sb6172sa1102 sanken2sd371-0sanken 2sa1102lt019181t2bgentron2sa808alt019s2sb617
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