2SA1669 Search Results

Ic14nf

Abstract: 2SA1669 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068
Contextual Info: Ordering number:ENN2972 PNP Epitaxial Planar Silicon Transistors 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions • High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ f=0.9GHz · Small noise figure : NF=2.0dB typ (f=0.9GHz)

FHC30LG

Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911

B948A

Abstract: 2SA1284 2SA1757 2SA1636 2SA1444 2SA1462 2sa1307 2SA1637 2SB793 nec 1441
Contextual Info: m s T y p e No. a s Manuf. H i# SANYO 1423 / Z. * 2SA 1424 / M 2SA1669 2 SA 1425 ^ 2SA B H T O SHIBA NEC RN2002 AN 1 A 4 M B ÎL HITACHI U ± il FU J ITSU & T MATSUSHITA h m MITSUBISHI □ — A ROHM DTA114ES UN41Í1 2SA1245 * 2 2SA1768 2SB1473 2SA1284 2SB1 1 3 0 M

2SA1669

Abstract: 2sa166 EN2972 S11-W
Contextual Info: Ordering number:EN2972 PNP Epitaxial Planar Silicon Transistor 2SA1669 High-Frequency Amplifier Applications Features Package Dimensions • High cutoff frequnecy : fT=3.0GHz typ. · High power gain : MAG=11dB typ f=0.9GHz · Small noise figure : NF=2.0dB typ (f=0.9GHz)

2SA1669

Contextual Info: Product specification 2SA1669 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High power gain : MAG=11dB typ f=0.9GHz 1 0.55 High cutoff frequency : fT=3.0GHz typ. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

po102

Abstract: 1401CA1 DIAC ecg6407 ECG6407 ic 565 1401CA3 AL307BM 78l05 sot-23 DZS535-15 AL307
Contextual Info: RF & MICROWAVE TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857

sot-23 15V vebo pnp

Abstract: 2SA1669
Contextual Info: Transistors IC SMD Type PNP Epitaxial Planar Silicon Transistors 2SA1669 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High power gain : MAG=11dB typ f=0.9GHz 1 0.55 High cutoff frequency : fT=3.0GHz typ. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1

NF-20

Abstract: 2SA1669 D1099 ITR04064 ITR04065 ITR04066 ITR04067 ITR04068 ITR04069 ITR04070
Contextual Info: 注文コード No. N 2 9 7 2 2SA1669 No. N 2 9 7 2 D1099 2SA1669 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波増幅用 ・しゃ断周波数が高い：fT=3.0GHz typ。 ・電力利得が大きい：MAG=11dB typ f=0.9GHz 。

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

2SC5226

Abstract: VHF-UHF Band oscillator 2SC4401 2SC4402 2SC4403 2SC4404 2SC4405 2SC4406 2SC4407 2SC4853
Contextual Info: Continued frotn previous page A b solute maximum ratings Type No. Package typ» Applications E le ctrica l cha ra cte ristics Ta = 2 5 C fre v cE le cobevcB VCBO (V) VCEO 00 le (mÀ) (mW) (? ) (GHi) fr VCE (V) le (m A) UHF to S-band low-noise amplifier, oscillator

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PT 4962

Contextual Info: Ordering n u m b e r:EN4 6 5 2 FC151 No.4652 PNP Epitaxial P lanar Silicon Composite Transistor SAIIÊYO High-Frequency Amp,Current Mirror Circuit Applications I F eatu re s • Composite type with 2 transistors contained in the CP package currently in use, im proving the

3SK189

Abstract: 2SA1669 2SC3772 2SC3773 2SC3774 2SC3775 2SC4270 2SC4364 2SC4365 2SC4854
Contextual Info: C ontinued from previous page Absolute maximum Device Package type VCBO V Electrical characteristics (Ta = 25 lc , Pc (mA) i (mW) VCEO (V) 2SC4861 CP UHF local oscillator 20 10 2SC4857 CP VHF to UHF local oscillator 18 10 2SC4854 CP Low-voltage low-current

EN4652

Abstract: ic 7850 2SA1669 FC151
Contextual Info: Ordering number:EN4652 FC151 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Current Mirror Circuit Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

2SA1669

Abstract: S121 transistor 2S D 716 marking BS
Contextual Info: O rd e rin g n u m b e r: EN 2972 _ 2 S A 1 6 6 9 PNP Epitaxial P lanar Silicon Transistor High-Frequency Amp Applications F e a tu re s •High cutoff frequency : fx = 3.0GHz typ ■High power gain : MAG= 11 dB typ f=0.9GHz ■Small noise figure

2sa910

Abstract: UPA75HA a 1232 nec Pa75ha 2SA1302 TOSHIBA 2SA1424 2Sa795 2sa1013 2SA812 2SA1516 toshiba
Contextual Info: - m « Type No. 2SA 1232 , 2SA 1233 / 2SA 1235 _ 2SA 1236 , 2SA 1237 , 2SA 1238 » 2SA 2SA 2SA 2SA 2SA 2SA 1241 1242 1243 . 1244 „ 1245 ^ 1245A 2SA 1246 ~ 2SA 1247 2SA 1248 ~ 2SA 1249 2SA 1252 ^ •E m h SANYO a TOSHIBA % 3C $ K 2 Ä $ Ü 3 S B 5 'S S B

7901S

Contextual Info: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.

EN4652

Abstract: ic 7850 2SA1669 FC151 X-7850
Contextual Info: Ordering number:EN4652 FC151 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Current Mirror Circuit Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting

transistor kt 925

Abstract: 2SC4365 2SC4072
Contextual Info: SAflYO VERY HIGH-FREQUENCY TRANSISTOR SERIES ill Use * * * * * Features $ * # Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Dual TR for diff. amp High power gain Small noise figure High cutoff frequency ( ) ¡Marking on MCP, CP, PCP. For PNP, (-)sign is omitted.

Contextual Info: SA/iYO Lists for- T y p e No. 2SA type_ Type No. ma rk- Package ing 2SA 1252 D • C p E • 2 SA 125 6 C p 2 SA 125 7 G • C p 2 SA 13 3 1 0 • C p A L 2SA1338 C p 2 SA 13 4 1 B L c p 2 SA 134 2 C L c p 2 SA 134 3 D L c p 2 SA 1344 E L c p