2SA1328 Search Results

2SA1012

Abstract: 2SA1293 2SC2562 2SC3258
Contextual Info: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. 2SA1328 INDUSTRIAL APPLICATIONS U nit in mm • Low Collector Saturation Voltage : v CE(sat)= -0 .4 V (M a x .)a t I c = - 6 A • High Speed Switching Time : tgtg= 1.0/us (Typ.)

2SA1328

Abstract: 2SC3345
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3345 APPLICATIONS ·Designed for high current switching applications.

2sa1328

Abstract: 2SC3345
Contextual Info: JMnic Product Specification 2SA1328 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3345 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING

2sa1328

Abstract: 2SC3345
Contextual Info: SavantIC Semiconductor Product Specification 2SA1328 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3345 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

2sc3345

Abstract: 2SA1328
Contextual Info: SavantIC Semiconductor Product Specification 2SC3345 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1328 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications

Contextual Info: Sk “TOSHIB A -CDISCKLTL/OH IÖ F 9097250 T O S H IB A D IS C R E T E /O P T O 2SA1328 TO TT SS D D00731b 56C 073L6 D 7 " - 3 _ SILICON PNP EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 Q 3 M A X . 0 3 .6 ± 0.2 FEATURES:

2SC3345

Abstract: 2SA1328 BB240
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1328 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -6A ·High Switching Speed ·Complement to Type 2SC3345 APPLICATIONS ·Designed for high current switching applications.

2SA1328

Abstract: 2SC3345
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1328 Silicon PNP P o w er Transistors D E S C R IP T IO N • W ith T O -2 2 0 package • Com pierne nt to type 2 S C 3 34 5 • Low collector saturation voltage • High speed sw itching time /•*> A P P L IC A T IO N S

2SC2534

Abstract: 2SC3558
Contextual Info: m —3 Application * M AX. Atr O •O IC v CEO Type No. 2SC3558 2SC2562 2SA1012 2SC3258 2SA1293 2SD553 2SB553 2SD843 2SB753 2SC3257 SWITCHING REG. 2SA1328 2SC3346 2SA1329 2SC36Z5 A 0.6 2 0.2 f=1MHz VCB tön tstg tf (MHz) CV) (A) (pF) (V) (ms) (ß s) (ms)

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1328 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 0Z .6 ± 0 . 2 1Û3MAX. U FEATURES: - -IT . Low Collector Saturation Voltage : VcE sat =-0-W(Max.) at Ic=-6A . High Speed Switching Time : tst:g=l.0/is (Typ.)

2SC3345

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic = 6A) • High Speed Switching Time : tst,g=1.0//s (Typ.) • Complementary to 2SA1328

Contextual Info: , One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1328 DESCRIPTION • Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@lc= -6A PIN 1.BASE • High Switching Speed

.7J3

Abstract: 2SA1328 2SC3345 AC75
Contextual Info: T O S H IB A í&ISCKLTtl/OPTOJ- 9097250 T O S H IB A C D IS C R E T E /O P T O 2SA1328 Bh D Ë ^ ACHTES0 ^6C 07 3 1 6 DDOTBlb D 7 " - 3 _ S IL IC O N PNP E P IT A X IA L TYPE PCT PROCESS) Unit in mra HIGH CURRENT SWITCHING APPLICATIONS. 1Q3MAX. 03.6:1:0.2

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SA1317

Abstract: 2SA1348 2SC3331 2sc3345 2SC3398 2SA1313 2SA1314 2SA1315 2SA1316 2SA1319
Contextual Info: - 30 Ta=25°C, * £ P i J T c = 2 5 QC m £ ffl £ ^ VcBO VcEO (V) (V) Ic(DC) (A) Pc* IcBO (max) (W) (W) ( uh) LF A/SW -50 - 50 -0.5 0.15 PA/^hn*' -20 - 10 -2 0. 5 PA/PSW -80 - 80 -2 0.9 2SA1316 SS SS ss ss LF LN A -80 - 80 -0.1 2 S A 1317 ZM LF A - 60

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry