2SA1276 Search Results

2SA1276

Abstract: 2SC3230 general semiconductor transistors
Contextual Info: SavantIC Semiconductor Product Specification 2SA1276 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3230 ·Good linearity of hFE APPLICATIONS ·General purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SA1276

Contextual Info: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PET PROCESS 2SA1276 APPLICATIO NS • P o w e r Ampl i f i er Appl i cat i ons . 1 Car Radi o An d C a r S t e r e o Ou t put S t a g e Appl i cat i ons F E A TU R E S • Good L i n e a r i t y of • Comp l e me n t ar y to

2SA1276

Abstract: 2SC3230 1.7MHz cordless telephone
Contextual Info: Inchange Semiconductor Product Specification 2SC3230 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1276 ·Good linearity of hFE APPLICATIONS ·General purpose applications ·Cordless telephone tx final amplifier application for 1.7MHz system

2SA1276

Abstract: 2SC3230
Contextual Info: Inchange Semiconductor Product Specification 2SA1276 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3230 ·Good linearity of hFE APPLICATIONS ·General purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: 2SA1276 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.8 @I(C) (A) (Test Condition)2.0

2SA1276

Abstract: 2SC3230
Contextual Info: JMnic Product Specification 2SA1276 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3230 ・Good linearity of hFE APPLICATIONS ・General purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

2SC3230

Abstract: 2SA1276
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1276 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3230 APPLICATIONS ·Designed for general purpose applications.

2SC3230

Abstract: 2SA1276
Contextual Info: SavantIC Semiconductor Product Specification 2SC3230 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1276 ·Good linearity of hFE APPLICATIONS ·General purpose applications ·Cordless telephone tx final amplifier application for 1.7MHz system

Contextual Info: , U na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SA1276 Silicon PNP Power Transistor DESCRIPTION PIN 1.BASE • Collector-Emitter Breakdown Voltage 2.COLLECTOR : V(BR)CEo= -SOV(Min) • Good Linearity of hFE

2SA1281

Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 kta949 2SC3192 C4369 2SC3226 2Ns551
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No ^ FE - Applications (T Y P M IN (m W ) Ic Iß (V) (mA) (V) <mA) (mA) 6 1 - - (M H z ) V CT. (V) (550) 6 V CE •e f (mA) (dB) (V) (mA) (M H z ) I 5.0 6 - 1 Ic 20 100 40^200 6 1 - — — (550)

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173

2SC3207

Abstract: 2sc3205 KTC2075 2SC3228 2SC3226 2SC3229 2SA1273 KTC2230A Y kta949 2SC3194
Contextual Info: Electrical Characteristics T a - 2 5 0O (m W V CEO N PN F M /R F. M IX O SC PN P (T Y P ) M IN (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 MAX NF Ic (mA) V CE •e f (dB) (V) (mA) (M H z ) I 5.0 6 - 1 50 TO-92(M) F5 100 50 TO-92(C) F3

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905