2N665 Search Results

2N6661

Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
Contextual Info: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.

2n6654

Contextual Info: SavantIC Semiconductor Product Specification 2N6654 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

2N6155

Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS

4900 SIEMENS

Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
Contextual Info: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS

Contextual Info: 2N6659 ^ Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVdss/ BV R ogs d S ON Order Number / Package '□(ON) (max) (min) TO-39 i.8 n 1.5A 2N6659 35V High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

BC140-16

Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
Contextual Info: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688

Contextual Info: 2N6653 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6660

Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
Contextual Info: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh

2N6648

Contextual Info: File N u m b e r 1013 2N6648, 2N6649, 2N6650 10-Ampere P-N-P Darlington Power Transistors 40-60-80 Volts, 70 Watts Gain of 1000 at 5 A T E R M IN A L D E S IG N A T IO N S c FLAN GE Features: • Operates from 1C without predriver A p p lication s: ■ Power switching ■ Audio amplifiers

2N6659

Contextual Info: Superte x inc. 2N6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVcss / BV dgs R dS ON (max) Id(on) (min) 35V 1,8£2 1.5A Order Number / Package TO-39 2N6659 Advanced DMOS Technology High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process

Contextual Info: LJi Supertex in c . 2N 6659 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVqss I R dS ON b v dgs (max) 35V 1.8Î2 If Standard Commercial Devices Order Number / Package TO-39 1.5A 2N6659 Advanced DMOS Technology High Reliability Devices

2N6659

Contextual Info: fài Supertex inc. 2N6659 N-Channei Enhancement-Mode Vertical DMOS FET Ordering Information BVdss/ BV ^DS O N qgs (max) 35V 1.8Î2 If Standard Commercial Devices Order Number / Package TO-39 1.5A 2N6659 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process

1004J

Abstract: 2N6659 M 1004j
Contextual Info: Tem ic 2N6659/2N6660, VQ1004J/P_ suimnix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt N um ber V BR DSS M in (V) rDS(on) M ax (Q) v GS(th) (V) 2N6659 35 1.8 @ VGS = 10 V 0.8 to 2 1.4 2N6660 60 3 @ V(-js = 10 V 0.8 to 2 1.1

Contextual Info: roduct*, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6654 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package •High voltage capability •Fast switching speeds •Low saturation voltage

2N6653

Contextual Info: ^E.mi-donciiLcto'i ^Products., Line. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon NPN Power Transistors 2N6653 DESCRIPTION •With TO-3 package •High voltage capability •Fast switching speeds •Low saturation voltage

2N6653

Contextual Info: 2N6653 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL .jír ^ TS » r i B i l ñ S T O OOOB144 S EMI CON DU CT OR General Semiconductor . Industries, Inc. 95D 02144 D 15 Am p NPN 300, 350, 400V 2N6653, 54, 55 SQ U H BEn COMPANY X G SR 15030,35,40 C 2R H IG H SPEED /H IG H PO W ER SW ITCH IN G T R A N S IS T O R S

Contextual Info: ~7¡Ü GENERAL SEMICONDUCTOR » T | 3 c11öSi:iD G Q 0 n 3 1 72C 01931 391 859 0 GENE RA L S E M I C ON DU CTOR 1$T General ^ 3^ Semiconductor « Industries, Inc • fi ]|~ 3 3 ^ S' D NPN TRANSISTOR CHIP S q i l H R E n COMPANY “ 21 ” Typical Device Types: 2N6653, 2N6654, 2N6655, XGSR10045

2N6650 JANTX equivalent

Contextual Info: 2N6648 – 2N6650 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/527 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at -10 amps and is military qualified up to the JANTXV

MOSFET 2n6659

Contextual Info: N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X • Switching Regulators • Converters • Motor Drives ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated 1 VDS VGS ID ID IDM1 PD Drain – Source Voltage Gate – Source Voltage Drain Current Drain Current

Contextual Info: 2N6653 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

jfet selector guide

Abstract: T0-220SM
Contextual Info: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763

2N6653

Contextual Info: SavantIC Semiconductor Product Specification 2N6653 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers