2N6257 Search Results

2N6257

Contextual Info: Product Specification www.jmnic.com 2N6257 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications

2N6257

Contextual Info: 2N6257 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2n6258

Contextual Info: POWER TRANSISTORS PT TYPE NO. 2N3771 TO-3 MAXIMUM RATINGS @ 25°C BV cbo BVcto BV ebo Ic V V V A Watts 150 2N3772 150 2N6257 150 2N6258 250 50 t Ft 2> k VCE A V MIN MAX Sat Voltages Vet Vet V V Test Conditions in Ic A A I ebo ma 40 5 30 15 60 15 4 2.0 27

2N6257

Contextual Info: 2N6257 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6257 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)20

2n6257

Contextual Info: 2N6257 NPN POWER TRANSISTOR Linear Amplifier, Series Pass Regulators and Inductive Switching Amplfiers DIM A B MIN C D E 6.35 0,96 F 29,90 10,69 5,20 16,64 11,15 G H J K L M - - - - 3,84 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter Collector-emitter voltage (open base)

2N6257

Contextual Info: Inchange Semiconductor Product Specification 2N6257 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・Designed for audio amplifier and switching circuits applications

complement of 2N3053

Abstract: BDY29 2N6259 2N4314 BDY37 2N6259 amplifier 40375 40411 2n6259 general 2n377
Contextual Info: 2N3771 F A M IL Y [n-p-n] silicon f j = 0.8 MHz min; P j up to 250 W max DESCRIPTION h FE VCEO,su,) V CER(susl V c e v *“* V V V 2N TYPES 2N6257 2N 3771* 2N3772* BDY29 High-Current, High-Current, High-Current, High-Current, General General General General

2N6257

Contextual Info: SavantIC Semiconductor Product Specification 2N6257 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications

Contextual Info: 2N6257 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

b0745

Abstract: 2n3772 solitron rcs258 BDX40 MRF428A RCS25 MRF422 2SD1213R
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 163-04A 163-04SPC 2N6257 163•04 163-04 MJ6257 1723-0405 1723-0410 ~~b~~14 25 30 164-04A 164-04SPC 164-04 164-04 ST28138 SDT3201 SDT44331 SDT44331 ~~~J~r 35 40 80745 B0745 BD745 2N1823 2N1823 2N1823 2N2123

IC 8030

Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3

2N3054

Abstract: 2n3773 power Amplifier 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . P t to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . A A i 9U X 9U le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

transistor 40411

Abstract: 2N5867 2N6258 40411 transistor 2N1487 2N1488 2N1489 2N1490 2N1702 2N3442
Contextual Info: PNP Compla•Typ«* HMnt V cextut ic Volts) Max IS/fe »M hn ® ic / m (Mln-Max @A/¥) (V@A/A) 3.0 @ 1.5/.3 3.0 @ 1.5/3 1 @ 1.5/.1 1 @ 1.5/.1 3.2@ .8/.08 3.5@ 1.5/4 3.5 @1.5/4 2.5 @1.5/4 2.5@ 1.5/4 4.0@ .8/4 .025*030 .025* @30 .025*@30 .025’ @30 .20* @30

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

2N3055

Abstract: 2N3055S 2SC1308 2N3055HV 2N3773 2N4347 2N6253 2N6257 2N6371 2N6371HV
Contextual Info: TO-3 WtiJâMSk DIM A B C D E F G H J K L M rsn MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M. TO-3 Power Package Transistors NPN

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

2N3771

Abstract: 2N3772G 2N3772 1N5825 2N3771G 2N6257 MSD6100 2N3771 power transistor
Contextual Info: 2N3771, 2N3772 2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features http://onsemi.com • Forward Biased Second Breakdown Current Capability

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2NXXXX

Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
Contextual Info: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS