2N1256 S P
Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min
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2n31172n43832n43842n4385+72n4386cbr10cbr25ser/escbr12cbr30c1000se32n1256 s p
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2N217
Abstract: 2N2708 2N4135 2N859 2N915 2N3117 2N4383 2N4384 2N4385 2N4386
Contextual Info: NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER Cont'd. TYPE NO. VCB 2N3117 2N4383 2N4384 2N4385 2N4386 • 60 40 40 40 40 V VCE V EB hpE at •c Vce mA V V mA MHz 1.0 10 10 10 10 60 VcE(s) at V V min max 60 30 30 30 30 6 ■ 5 5 250 100 100 40 500 500 500 500
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2n31172n43832n43842n4385+102n43862n9152n916cbr10cbr25cbr122n2172n27082n41352n859
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2N5225
Abstract: 2N5179 TO-92
Contextual Info: D tv ta TYPE PACKAGE BVCEO BVCBO BVEBO IC BO VCB IV M IN IV ) M H 2N4314 2N4384 2N4386 2N4400 2N4401 PNP NPN NPN NPN NPN T O -39 T O -18 T O -18 TO-92 721 TO-92 (72) 65 30 30 40 40 90 40 40 60 60 2N4402 2N4403 2N4404 2N4405 2N4409 PNP PNP PNP PNP NPN
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2n43142n43842n43862n4400+82n44012n44022n44032n44042n44052n44092n52252n5179 to-92
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p20n60
Abstract: CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 2N1948 2SC733BL PTC139 BC183K BC183KC BC183 BC183C BCl84 ZTX384 2N5963 2N5963 2N5963 PMBT5088 2N718A UPI718A 2SC482
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bc183cpbcl84cpbc184cbc184lc+16bc183kbbc183bbc184b2n43852n4386bc269p20n60ck4202sc733bl2n10772sc4822sc3372s01781kbcy581xlow-power silicon npnbsy75
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BCY59-9
Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0
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2n7202n720a2n9122n2s09+142n23682n23692n2369a2n26152n26162n783bcy59-9bsx21 npn transistor2n120001-1202n160a2n9158sx212n719
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Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN
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2n35762n36722n37002n4962+52n49632n50562n50572n42092n4269
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2N4250
Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
Contextual Info: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248
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2n41422n41432n41502n4207+13t01062n42082n42092n42102n42272n42502n42492n44112n32842n42482n43552n43582n4260
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switch NPN
Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV
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2n7032n706c2n7082n709a+102n7172n718a2n719a2n720a2n7212n722aswitch npnbsy182n23692n4390
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416
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cs9011j
Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •
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2n15072n15662ni6132n1889+162n18902n18932n19732n19742ni975o-237cs9011jmps151pn5180mps4424bc56088c527-252n3304bc5568pn2897mps9633c
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to 106 2n5133
Abstract: 2SA564A 2N4288 2N5133 2N4248 2N4290 2SA564 2SA640 2N4249 2N4250
Contextual Info: Low Level and General Purpose Amplifiers TYPE NO. POLA CASE RITY VCEO Pd IC mW (mA) (V) min max fT Cob N.F. max max IC VCE max IC min (mA) (V) (V) (mA) (MHz) (MHi) (dB) 2N4061 2N4062 2N4248 2N4249 2N4250 P P P P P TO-92B TO-92B TO-106 TO-106 TO-106 360
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2n4061o-92b2n40622n4248+10o-1062n42492n4250to 106 2n51332sa564a2n42882n51332n42902sa5642sa640
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2N4035
Abstract: 2n4209 datasheet 2N3576 2N3672 2N3700 2N3701 2N3798A 2N3799A 2N3829 2N3946
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX *ICES *ICEV hFE @ IC (mA) MIN MAX @VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) NF ton (ns) toff (ns) MAX
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2n35762n36722n37002n4415a+112n49622n49632n50562n50572n40352n4209 datasheet2n37012n3798a2n3799a2n38292n3946
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2SA640 M
Abstract: 2sa550 2N5828 2Sa640 L 2SA889
Contextual Info: Low Level and General Purpose Amplifiers M A X IM U M R A T IN G S TY PE PO LA NO. R IT Y CASE H , PE P« m W Ic (m A ) V ceo (V) m in m ax Ic (m A ) VCE (V) V cE ftrt m ax Ic (V) (m A ) C* m ax N .F . (M H z ) (M H z ) (d B ) . _ _ - . _ . . - - - -
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2n40582n40592n40602n4061+112n40622n42862n42872n42882n42892n42902sa640 m2sa5502n58282sa640 l2sa889
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2n5183
Abstract: BC187 Small Signal Transistors TO-18 Case
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV
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2n7032n706c2n7082n709a+92n7172n718a2n719a2n720a2n7212n722a2n5183bc187small signal transistors to-18 case
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2n744
Abstract: LM3661TL-1.40
Contextual Info: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT
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2n7032n706c2n7082n709a+82n7172n718a2n719a2n720a2n7212n722a2n744lm3661tl-1.40
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2N4250
Abstract: 2N5133 2N4249 2N4288 2N4291 to 106 2n5133 2N4248 2N3901 2N3707 2N3708
Contextual Info: TYPE NO. 2N3721 2N3798 2N3799 2N3843 2N3843A 2N3844 N N N N N N P P N N CASE MAXIM UM RATINGS Pd ImW 'c V CEO mA) (V ) TO-92B TO-92B TO-92B TO-92B TO-92B 360 360 360 360 360 200 200 200 200 200 30 30 30 30 30 TO-92B TO-18 TO-18 TO-92B TO-92B 200 360 360
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2n3707o-92b2n37082n3709+102n37102n37112n42502n51332n42492n42882n4291to 106 2n51332n42482n3901
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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2N5219
Abstract: T0-92B 2N4286 2N4291 2N4289
Contextual Info: Low Level and General Purpose Amplifiers M A X IM U M R A T IN G S TYPE NO. PO LA R IT Y CASE H KE Pd Ic VcEO mW (mA) (V) min max le V CE max le (mA) (V) (V) (mA) 2 4.5 4.5 4.5 4.5 0.125 0.125 10 10 - 2N3859 2N3860 2N3900 2N3901 N N N N TO-92B TO-92B
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2n38592n38602n39002n3901+112n39032n39042n39052n39062n39462n39472n5219t0-92b2n42862n42912n4289
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2N3014 TO-18
Abstract: 2N2539 2N3829 2n4014 datasheet BC477 2N718A BSV68 30-40-500 BC187 BC477 equivalent
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV
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2n7032n706c2n7082n709a+16bsy62bsy79bsy95amm4257mm425823-february2n3014 to-182n25392n38292n4014datasheet bc4772n718absv6830-40-500bc187bc477 equivalent
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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