2N438 Search Results

rca 101m

Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

2N859

Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385

2N5286

Abstract: 2N4236 2N4387 2N4388 2N4398 2N4399 2N4898 2N4899 2N4900 2N4901
Contextual Info: H P II PNP DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BREiA K D O V VN V OLTAGE S SAT . V O L T A GES M<ax. h F: E CASE V CB VΠV EB (V) 'c (A) M in. Max. (A) 'b (A) V CE (V) V BE (V) 2N4236 TO -5 80 80 7 1 0.25 30 150 0.25 0.125 0.6 2 2N4387

2N62U

Contextual Info: 8 E ì I m J E L E C T R O N IC S , INC. COLLECTOR CURRENT = D evice No 2N3660 2N3661 2N3740 2N374I 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680 2N62U 2N6212

2N1256 S P

Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min

2NS344

Contextual Info: COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No SECTION 2 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2NS344 2N5345 2N5679 2N5680 2N6211 2N6212 2N6213 2N6214

Contextual Info: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680

2N4249

Abstract: 2N5055 2N719A 2N4248 2N547 2N657A 2N4250 2N4250A 2N4389 2N4964
Contextual Info: bi CENTRAL SEMICONDUCTOR VCB VCE V EB hFE at lc VCE V V V min ma mA V V mA MHz pF 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 — — 120 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75

2N217

Abstract: 2N2708 2N4135 2N859 2N915 2N3117 2N4383 2N4384 2N4385 2N4386
Contextual Info: NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER Cont'd. TYPE NO. VCB 2N3117 2N4383 2N4384 2N4385 2N4386 • 60 40 40 40 40 V VCE V EB hpE at •c Vce mA V V mA MHz 1.0 10 10 10 10 60 VcE(s) at V V min max 60 30 30 30 30 6 ■ 5 5 250 100 100 40 500 500 500 500

2N5055

Abstract: 2N551 2N550 2N4248 2N4250 2N4249 2N5378 2N4250A 2N547 2N4389
Contextual Info: bl CENTRAL SEM ICO ND UC TOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 - TYPE NO. 2N4248 2N4249 2N4250 2N4250A 2N4964 2N4965 2N5086 2N5087 2N5378 2N5379 Vcb V 40 60 40 70 50 50 60 60 40 40 VCE V eb V V 5 40 60 5 40 5 5 60 5 40 40 5 50 3 3 50 30 5 30 5 hFE

2N5225

Abstract: 2N5179 TO-92
Contextual Info: D tv ta TYPE PACKAGE BVCEO BVCBO BVEBO IC BO VCB IV M IN IV ) M H 2N4314 2N4384 2N4386 2N4400 2N4401 PNP NPN NPN NPN NPN T O -39 T O -18 T O -18 TO-92 721 TO-92 (72) 65 30 30 40 40 90 40 40 60 60 2N4402 2N4403 2N4404 2N4405 2N4409 PNP PNP PNP PNP NPN

2N4248

Abstract: 2N4249 2N4250 2N4250A 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910
Contextual Info: bl SEMICONDUCTOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 V CB V CE V EB hFE at le VCE V V V min ma mA V V 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75 0.6 0.4 0.15 — — 120 c

2N4134

Abstract: 2N4135 2N915 2N1256 2N4384 2n726
Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385 2M4386

SDT69504

Abstract: 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333
Contextual Info: Device Type 2N3740 2N3741 2N4387 2N4388 2N4999 2N5001 2N5147 2N5149 2N5333 2N5597 SDT3501 SDT3502 SDT3503 SDT3504 SDT3505 SDT3506 SDT3507 SDT3508 SDT3509 SDT3510 SDT3511 SDT3512 SDT3513 SDT3514 SDT3515 SDT3516 SDT3550 SDT3551 SDT3552 SDT3553 SDT3554 SDF3575

Contextual Info: bl CENTRAL SEM ICO ND UC TOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 V CB V CE V EB hFE at le VCE VCE s V V V min ma mA V V 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 — — 120 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75

TO111 package

Abstract: 2N3774 2N3660 2N3661 2N3740 2N3741 2N3775 2N3776 2N3777 2N3778
Contextual Info: 8 E t l ! Ì M ELECTRO N ICS, INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344 2N5345 2N5679 2N5680

p20n60

Abstract: CK420 2SC733bl 2N1077 2SC482 2SC337 2S01781K BCY581X LOW-POWER SILICON NPN BSY75
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 BC183CP BCl84CP BC184C BC184LC BC183KB BC183B BC184B 2N4385 2N4386 BC269 2N1948 2SC733BL PTC139 BC183K BC183KC BC183 BC183C BCl84 ZTX384 2N5963 2N5963 2N5963 PMBT5088 2N718A UPI718A 2SC482

BC232A

Abstract: PN544 2SC9410 TD-101 SA2716 LOW-POWER SILICON NPN ZTX223 NA31XH TD101 2MC509
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50

mallory 150m

Abstract: AC127 Low-Power Germanium NPN sk3010 2N366 germanium ac127 ASY28 npn 10 a 50 v germanium AC127-01 germanium
Contextual Info: LOW-POWER GERMANIUM NPN Item Number Part Number Manufacturer Y BR CBO hFE (V) Ic Max lA) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CEO (A) (V) PD Max (W) Derate at Toper (WrC) eC) Max Package Style D vic sUnder 1 Watt, (Co nt' d) 5 • 10 2N438A TA167 TA167 TA167

2N3660

Abstract: 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779
Contextual Info: y. 8 E u M Ê E L E C T R O N IC S , INC. COLLECTOR CURRENT = 2 AMPS PNP TYPES Device No Case VCBO Volts 2N3660 2N3661 2N3740 2N3741 2N3774 2N3775 2N3776 2N3777 2N3778 2N3779 2N3780 2N3781 2N3782 2N4234 2N4235 2N4236 2N4387 2N4388 2N4898 2N4899 2N4900 2N5344

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

BCY59-9

Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
Contextual Info: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157