294D Search Results

3 phase ac sinewave phase inverter single ic

Abstract: U5J diode
Contextual Info: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One

2-94B1A

Abstract: 2-108A4A
Contextual Info: TOSHIBA [3 1 Package Dimensions [3 ] Package Dimensions Unit: mm 79 + 0 .5 L-il-U I I L— l ‘X-L- r i I 2-33F1 A *5,7+ 0.! I (2-33D1 A) <4 5±0 2 14-FAST-ON-TASifllO Ci H fl il 1 H 1. (+) 7.W 2.GU 8 GX 3. U 9 .GY 4.GV 5.V 10.GZ L i.(- ) t 1 6 GW (2-78A1 A)

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

1ZS40

Abstract: ft05d
Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • High Input Impedance • H ighSpeed • Low Saturation Voltage 2 -FAST-ON-TAB #110 : tf=0.35,«s Max.

MG75J1ZS50

Abstract: ZS50 MG75J1Z 4A05 diode
Contextual Info: TOSHIBA MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG50J2YS50

Abstract: td 4950
Contextual Info: MG50J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max.

Contextual Info: TO SHIBA MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M5 • • 2~05.6±o.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Contextual Info: MG100J1ZS40 TOSHIBA MG100J1ZS40 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS. 2-FAST-ON-TAB #110 M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35^s Max. tj.r = 0.15^s (Max.) Low Saturation Voltage

Contextual Info: TO SHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 —FAST —ON —TAB #110 High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.)

Contextual Info: T O SH IB A MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • 2 -FAST-ON-TAB #110 High Input Impedance H ighSpeed : tf=0.35,«s Max. trr = 0.15^8 (Max.) Low Saturation Voltage

igbt toshiba mg

Abstract: MG50J1ZS40 ZS40
Contextual Info: TOSHIBA MG50J1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50J1 ZS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. B2 • • • 2 -FAST-O N-TAB # 1 1 0 High Input Impedance High Speed : tf= 0.35/^s Max. trr = 0.15,«s (Max.)

VF-RM5

Abstract: TT 2206 et 1102 TM55EZ-H TM55EZ-M X103 TM25EZ
Contextual Info: - 294 — IM ÿ x * ' l — ju M & 1È TM 25EZ o-H r O té tti 2 00 0V • * * £ » TM 25K7, M TM 25EZ-H 480 960 V /r fi.Vf V’fiR.W 400 800 Y ViiB.M 400 S00 V ,i¿ E ftïïï® -ï- Vksm I t iav> /riHMM I t, h r-t lii ,ll Pr,s; fer 25 : T f llf - Æ ,

2D1150D-050

Abstract: 2DI100Z-120 2DI150D H-17 H-18 H-19 H-22
Contextual Info: Ovó 002 oo fi Oi 001 08 001 001 OOfil 001 001 OSS 008 OS* 0021 0001 OS* 008 OS* 00*1 0021 0021 0001 OSÉ 008 3I °" A 8 tB % 0002 00*2 0081 0002 0002 08EI 0002 08ÊI 0002 0002 0091 0091 0*21 0091 0*21 0091 0091 0001 0001 00i CAO moi OSI Ofil fi21~0*fi2I~0*S2I—OT—

NV240HC04

Abstract: NV100HC04 NV120HC04 NV150HC04 NV200HC04 NV220HC04 NV270HC04
Contextual Info: — ' < ' X if.) 335 a ? ï i i k m , — n - 346- 3l"Qd I l-Q d - L K - Ol-Qd 6-Qd s tr E lí8 - ^ > <miu CD : T r > * |a ig ^ > CO •C* - 351 - - 352 - < '■ •J~ ì3r 1*1 f ö :m m > - HT-1 HT-2 77)4.5 30.2*«' 1 189*» “ ) ■<rJ21.5MAX (0 846)

sis 968

Abstract: KXB151D-14A KXB801D-14A BV EI 305 2056 K66188 K66-1
Contextual Info: - 340 - * ± E N B r j r j r jD -14 A ENBr / jr j JB D -I4B 'J 7, 9 :• i l j ¡m]i'\fMí-tT r i\ ■~ 7 -• i 'i-No. 1-166188 • ï ' h b z I . IK i \ /)+■-> ^¡l ; Vi 1 1 DC 1 m A ^ t « V ,|L /: > J ^?iS f f t ^M -t-^ % £ ft; X * ;u * ' :v; x EN Br jr /

ta8250

Abstract: SM6DZ46 SM6DZ46A SM6GZ46 SM6GZ46A SM6JZ46
Contextual Info: — 141 — * SM 6 rD, G, J _ jZ 4 6 • W të 0 * * T T -5 ^ 13 - 1 O F I A 'J 6 A o i& V i iñ f á , f T« = 25 " C ) R * ft fô U * t L T t e îiiü 9 t t # * 7 Œ O T O ^ O t t f f lS f ê â T 'if e f S ^ 'iT 'i& o t V â k # # £ í* & ( 1500V ,

BCR10EM-10

Abstract: TA8250 BCR10AM-4 BCR10AM BCR10AM-8 BCR10AM-12 BCR10AM-10 BCR10EM-6 BCR10EM-8 BCR10EM-4
Contextual Info: 178 - — H B C R 1O AM • * » 0 # ^ o f K í/ c f t iT r W f f i R f f l O if 7 ¿ ï^ f t iïr iiJM (L ffl) W h h 3 > 0 £ 7 ) W i - ^ K f lt & iW .m .) i-fc • i E ■ * * Ä # BCR 1 0 AM -6 B C R 1 0 A M -8 BCR10AM -10 Vd s m 300 400 600 700 800

FSM30C6

Abstract: FSM30C FSM30c2 FSM30C4 H-17 H-18
Contextual Info: - 174 - a FSM30C oT0-3fiJl^-77v o77XhyfktWik 07= 7- y 3>-f y7'fëiE OÜLtS^Ä File No. E809771 •*5Ë*S ¡¿ FSM30C2 ($7—V-2.PÆ , AC1500V I'/m T„=25°C' RMS avi Igm di/dl T, Tsig 200 30(Tf=63°C) 275(50Hz, 300(/=2~10m s) 10 0.5 10 3 20[Vd— %V’drm)

HC06

Abstract: NV100HC06 NV120HC06 NV200HC06 NV240HC06 NV270HC06 NV270HC06A
Contextual Info: - 336 e >I 7* ? NVr . k . jH C 0 6 - > ' ; - X - U * ? '- -t > 9 — 9 o : U L 94V -0 • : 1 ; £ C M 1 i m 1 2 V — ST— S; / | Z ifiL fz t £ < n $ & - % r £ DC 1 ff i H 'f — f fil , £ ft £ ig [V ] a íf r lG I U t S : [V ] ÍV ^ 00.6 5± 1 5 - 1

S6111

Abstract: DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40 SG16AA60 SG25AA20
Contextual Info: iü & s t? p u r p p IrtlrtLOlßW 0 0 0 0*0 co eo m co cnj OOOOO r r o£ cw : te G> csi co eo co o LOLOLOLOLO LOLOo O o esj eo cg co eo co co o O O OOOOO o O -H OOOOO OOOOO CO Tstg LOLO1 -04 -0LO o o o o lo LOLOLOLOLO LOLOLOLOLO LOLOlo lo O O co co co co eo

KK55GB

Abstract: KK55GB-40 KK55GB-80 PK55GB PK55GB-40 PK55GB-80
Contextual Info: - H í± * « • «M U P K 5 5 G B , K K 55G B 273- I- o u £ 5 l* * S » £ ^ PK 55 G B-4 0 , P K 55 G B-8 0 , KK55GB-80 960 V rrm 400 Vdrm 400 ii m E -*!- ill] Tj = 125‘C , V d = V rrm 800 V I drm T j = 1 2 5°C, V d= V dru 800 V V tm T j = 1 25T, I t m = 165A

QCA75A60

Abstract: QBB100A60 QCA30B40 ic LM 356 251C QBB100A40 QBB150A40 QBB150A60 QCA50B40 QCA50B60
Contextual Info: - 1 9 9 a ± « a QCA-2B QCA-2C T i lâ io m Œ V CE f i * f i * (A (A ) f i * f i * (V ) t f t . fi * (A ) (A ) (V ) (A ) f i ¿Z l . (A ) -K m , r * (ju s ) I p V BE d i/d t (A ) (V ) (A /î î s ) V f (u s) V be v i7 • Ü = 2 5 'C ) (V ) QCA-3A f i

SSG150C60

Abstract: SSG150C60 equivalent sumi jo SSG100C120 SSG100C80 SAT-10 SSG100C50 SSG150C20 SSG150C30 SSG100C
Contextual Info: A\ 3 , Z 'Q OS s ri a yw sri y w , v >p *»*«.! 09 rt-^ % = ü i ‘ 3 . 9 2 1 = '! S 2 '0 KW Az A = aA '0 £ Z \ = ' ± D .S 2 oor A V ÿ 3. i.V )p;ap D. }p / *p S r i, y "I V î aoA A Ot = '1 { V 8 ' 0 = y/ k,miA z A = QA ‘0 £Z = 'I ) AI oov III V I =17